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公开(公告)号：US20060131624A1
公开(公告)日：2006-06-22
申请号：US11298535
申请日：2005-12-12
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14614 , H01L27/1463 , H01L27/14689
摘要： Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
摘要翻译： 检测电容器和复位晶体管之间的电容在检测电容器和置于检测电容器周围的晶体管之间的电容之间是最大的。 为了减小该电容，减小复位晶体管的沟道宽度是有效的。 可以通过在复位晶体管的通道附近和有源区域与元件隔离区域之间的边界线分布来减少有效沟道宽度，从而增强与沟道相反极性的载流子的产生的离子 。
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公开(公告)号：US08772844B2
公开(公告)日：2014-07-08
申请号：US13339481
申请日：2011-12-29
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14614 , H01L27/1463 , H01L27/14689
摘要： Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
摘要翻译： 检测电容器和复位晶体管之间的电容在检测电容器和置于检测电容器周围的晶体管之间的电容之间是最大的。 为了减小该电容，减小复位晶体管的沟道宽度是有效的。 可以通过在复位晶体管的通道附近和有源区域与元件隔离区域之间的边界线分布来减少有效沟道宽度，从而增强与沟道相反极性的载流子的产生的离子 。
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3.发明授权Solid-state imaging device comprising doped channel stop at isolation regions to suppress noise 有权固态成像装置包括在隔离区域处的掺杂沟道停止以抑制噪声公开(公告)号：US08120077B2
公开(公告)日：2012-02-21
申请号：US11298535
申请日：2005-12-12
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14614 , H01L27/1463 , H01L27/14689
摘要： Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
摘要翻译： 检测电容器和复位晶体管之间的电容在检测电容器和置于检测电容器周围的晶体管之间的电容之间是最大的。 为了减小该电容，减小复位晶体管的沟道宽度是有效的。 可以通过在复位晶体管的通道附近和有源区域与元件隔离区域之间的边界线分布来减少有效沟道宽度，从而增强与沟道相反极性的载流子的产生的离子 。
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公开(公告)号：US20060192883A1
公开(公告)日：2006-08-31
申请号：US11360494
申请日：2006-02-24
申请人： Motonari Katsuno , Ryouhei Miyagawa
发明人： Motonari Katsuno , Ryouhei Miyagawa
IPC分类号： H04N5/225
CPC分类号： H01L27/14818 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14643
摘要： A solid-state imaging device has a plurality of photoelectric conversion elements two dimensionally arrayed in an imaging area, a light shielding film that regulates the amount of external light incident on the photoelectric conversion elements by a wiring pattern, a wiring layer placed between the light shielding film and the photoelectric conversion elements, and a plurality of contacts electrically connecting the light shielding film with the wiring layer in a lamination direction. The shape of the light shielding film is defined by a plurality of first figures overlapping with a second figure, each first figure being placed over a different contact in plan view, and the second figure having a plurality of apertures each corresponding to a different photoelectric conversion element. The center of each aperture in the second figure is displaced further from the center of a corresponding photoelectric conversion element toward the middle of the imaging area in plan view, as distance from the middle of the imaging area increases. Furthermore, a positional relation of the first figures with the second figure differs depending on location in the imaging area.
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公开(公告)号：US07602434B2
公开(公告)日：2009-10-13
申请号：US11360494
申请日：2006-02-24
申请人： Motonari Katsuno , Ryouhei Miyagawa
发明人： Motonari Katsuno , Ryouhei Miyagawa
IPC分类号： H04N5/225
CPC分类号： H01L27/14818 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14643
摘要： A solid-state imaging device has a plurality of photoelectric conversion elements two dimensionally arrayed in an imaging area, a light shielding film that regulates the amount of external light incident on the photoelectric conversion elements by a wiring pattern, a wiring layer placed between the light shielding film and the photoelectric conversion elements, and a plurality of contacts electrically connecting the light shielding film with the wiring layer in a lamination direction. The shape of the light shielding film is defined by a plurality of first figures overlapping with a second figure, each first figure being placed over a different contact in plan view, and the second figure having a plurality of apertures each corresponding to a different photoelectric conversion element. The center of each aperture in the second figure is displaced further from the center of a corresponding photoelectric conversion element toward the middle of the imaging area in plan view, as distance from the middle of the imaging area increases. Furthermore, a positional relation of the first figures with the second figure differs depending on location in the imaging area.
摘要翻译： 固态成像装置具有二维排列在成像区域中的多个光电转换元件，通过布线图案调节入射到光电转换元件上的外部光量的光屏蔽膜，布置在光 屏蔽膜和光电转换元件，以及在层叠方向上电连接遮光膜与布线层的多个触点。 遮光膜的形状由与第二图重叠的多个第一图形限定，每个第一图在平面图中放置在不同的触点上，并且第二图具有多个孔，每个孔对应于不同的光电转换 元件。 随着与成像区域中间距离的增加，第二图中的每个孔径的中心在平面图中从对应的光电转换元件的中心向着远离成像区域的中心位移。 此外，第一图形与第二图形的位置关系根据成像区域中的位置而不同。
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公开(公告)号：US07812380B2
公开(公告)日：2010-10-12
申请号：US12239111
申请日：2008-09-26
申请人： Tatsuya Hirata , Motonari Katsuno
发明人： Tatsuya Hirata , Motonari Katsuno
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14689
摘要： A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above the first region; a drain region of a second conductivity type formed on the first region; an isolation region having insulation properties, which is formed to surround a region where the signal accumulation region, the gate electrode, and the drain region are formed; a first conductivity type dopant doping region formed in contact with a side face and a bottom face of the isolation region, the first conductivity type dopant doping region having a higher dopant concentration than the first region; and a second conductivity type dopant doping region formed in the first region, under an end of the gate electrode in a gate width direction.
摘要翻译： 本发明的固态成像装置包括：包括第一导电类型的第一区域的半导体衬底; 形成在第一区域内的第二导电类型的信号聚集区域; 形成在所述第一区域上方的栅电极; 形成在所述第一区域上的第二导电类型的漏区; 具有绝缘性的隔离区域，其被形成为围绕形成信号存储区域，栅极电极和漏极区域的区域; 形成为与隔离区的侧面和底面接触的第一导电型掺杂剂掺杂区，所述第一导电型掺杂剂掺杂区具有比所述第一区更高的掺杂浓度; 以及形成在第一区域中的栅电极的栅极宽度方向的端部处的第二导电型掺杂剂掺杂区域。
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公开(公告)号：US20110001207A1
公开(公告)日：2011-01-06
申请号：US12820655
申请日：2010-06-22
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14641
摘要： A solid state image sensor includes: a first pixel and a second pixel, each including a light receiving portion; a first color filter formed in an upper part of the first pixel on a first main surface side of a semiconductor substrate; a second color filter formed in an upper part of the second pixel on the first main surface side of the semiconductor substrate; a metal interconnect layer formed on a second main surface side of the semiconductor substrate; and a substrate contact connected to the second main surface of the semiconductor substrate, and provided between the metal interconnect layer and the second main surface. The first color filter mainly transmits first light therethrough, and the second color filter mainly transmits second light therethrough. The second light has a shorter wavelength than that of the first light. The substrate contact is not provided in the first pixel.
摘要翻译： 固态图像传感器包括：第一像素和第二像素，每个包括光接收部分; 形成在半导体衬底的第一主表面侧的第一像素的上部的第一滤色器; 第二滤色器，形成在所述半导体衬底的所述第一主表面侧上的所述第二像素的上部; 形成在所述半导体衬底的第二主表面侧上的金属互连层; 以及与半导体基板的第二主表面连接并设置在金属互连层和第二主表面之间的基板接触。 第一滤色器主要透射第一光，第二滤色器主要透射第二光。 第二光的波长比第一光的波长短。 在第一像素中没有提供衬底接触。
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公开(公告)号：US07863661B2
公开(公告)日：2011-01-04
申请号：US12054038
申请日：2008-03-24
IPC分类号： H01L29/72
CPC分类号： H01L27/14603 , H01L27/14609
摘要： Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a common well on a semiconductor substrate. The first unit pixel includes: at least one photoelectric conversion region which converts light into a signal charge; the first semiconductor region that is formed on the common well and has a conductivity type identical to that of the common well; and the first contact electrically connected to the first semiconductor region. The second unit pixel includes: at least one photoelectric conversion region; the second semiconductor region that is formed on the common well and has a conductivity type opposite to that of the common well; and the second contact electrically connected to the second semiconductor region.
摘要翻译： 提供了一种包括单位像素的固态成像装置，其中单位像素包括形成在半导体衬底上的公共阱上的包括第一单位像素和第二单位像素的两种单位像素。 第一单位像素包括：将光转换成信号电荷的至少一个光电转换区域; 所述第一半导体区域形成在所述共同阱上并且具有与所述公用阱的导电类型相同的导电类型; 并且所述第一触点电连接到所述第一半导体区域。 第二单位像素包括：至少一个光电转换区域; 所述第二半导体区域形成在所述公井上，并且具有与所述公共井的导电类型相反的导电类型; 并且所述第二触点电连接到所述第二半导体区域。
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公开(公告)号：US20090008687A1
公开(公告)日：2009-01-08
申请号：US12166736
申请日：2008-07-02
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
CPC分类号： H01L27/14627 , H01L27/14623 , H01L27/14636
摘要： A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.
摘要翻译： 固态成像装置包括：配置有光接收部的摄像区域; 布置在所述光接收部分上的互连层，所述互连层包括具有开口的金属互连和第一绝缘膜; 在所述互连层上形成与所述光接收部分成一对一关系的内层透镜; 形成在所述互连层和所述内层透镜上的透明的第二绝缘膜; 与所述光接收部分成一对一关系地形成在所述第二绝缘膜上的顶部透镜，所述顶部透镜的上表面是凸曲面; 以及在顶部透镜上的透明膜，透明膜由折射率小于顶部透镜的折射率的材料形成。 以这种方式，入射光的至少一部分的焦点可以位于半导体衬底之上。
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公开(公告)号：US08274586B2
公开(公告)日：2012-09-25
申请号：US12966286
申请日：2010-12-13
CPC分类号： G02B3/02 , G02B3/0056 , G02B5/045 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14627 , H04N5/2254
摘要： A solid-state imaging device according to an implementation of the present invention is a solid-state imaging device including a plurality of unit pixels arranged in a matrix, and each of the unit pixels includes a photodiode which performs photoelectric conversion on light so as to convert the light into an electric signal, a top lens which collects incident light, and an intralayer lens which collects, to the photodiode, the incident light collected by the top lens, and a centroid of the photodiode is displaced from a center of the unit pixel into a first direction, the top lens is formed into an asymmetric shape so as to have a centroid displaced from the center of the unit pixel into the first direction, and the intralayer lens is formed to have a centroid displaced from the center of the unit pixel into the first direction.
摘要翻译： 根据本发明的实施方式的固态成像装置是包括以矩阵形式排列的多个单位像素的固态成像装置，并且每个单位像素包括在光上进行光电转换的光电二极管，以便 将光转换为电信号，收集入射光的顶部透镜以及聚光透镜中的由顶部透镜收集的入射光的内部透镜，并且光电二极管的质心从单元的中心位移 像素进入第一方向，顶部透镜被形成为不对称形状，以使得具有从单位像素的中心向第一方向偏移的质心，并且层内透镜形成为具有从中心位移的质心 单位像素进入第一个方向。
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