公开(公告)号：US20050090115A1

公开(公告)日：2005-04-28

申请号：US10692609

申请日：2003-10-24

申请人： Brian Kirkpatrick ,  Clint Montgomery ,  Brian Trentman ,  Randall Pak

发明人： Brian Kirkpatrick ,  Clint Montgomery ,  Brian Trentman ,  Randall Pak

IPC分类号： B08B7/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/76 ,  H01L21/762 ,  H01L21/302

CPC分类号： H01L21/02054 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76224

摘要： The present invention provides a process of manufacturing a semiconductor device that comprises a process of manufacturing a semiconductor device that includes plasma etching 250 through a patterned hardmask layer 210 located over a semiconductor substrate 225 wherein the plasma etching forms a modified layer 210a on the hardmask layer 210, and removing at least a substantial portion of the modified layer 210a by exposing the modified layer 210a to a post plasma clean process.