公开(公告)号：US20100304027A1

公开(公告)日：2010-12-02

申请号：US12789194

申请日：2010-05-27

申请人： Wei Ti Lee ,  Lai Ta ,  Srinivas Guggilla ,  Kevin Moraes ,  Olkan Cuvalci ,  Regan Young ,  John Mazzocco

发明人： Wei Ti Lee ,  Lai Ta ,  Srinivas Guggilla ,  Kevin Moraes ,  Olkan Cuvalci ,  Regan Young ,  John Mazzocco

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C14/568 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/54

摘要： Embodiments of the invention provide methods for processing substrates within a substrate processing system. In one embodiment, the method provides depositing a material on a substrate within a vapor deposition chamber coupled to a buffer chamber contained within a mainframe while maintaining a pressure of about 1×10−6 Torr or lower within a transfer chamber contained within the mainframe. The method further includes transferring the substrate from the vapor deposition chamber to the buffer chamber by a substrate handling robot while flowing a gas into the buffer chamber, evacuating the vapor deposition chamber, and maintaining a greater internal pressure within the buffer chamber than in the vapor deposition chamber. In some embodiments, the method includes transferring the substrate from the transfer chamber to a PVD chamber coupled to the transfer chamber by another substrate handling robot and depositing another material on the substrate within the PVD chamber.

摘要翻译： 本发明的实施例提供了在衬底处理系统内处理衬底的方法。 在一个实施例中，该方法提供了在包含在主机内的传送室内保持约1×10 -6 Torr或更低的压力的情况下，在耦合到主机内的缓冲室的气相沉积室内的衬底上沉积材料。 该方法还包括：在将气体流入缓冲室的同时，通过基板处理机器人将基板从气相沉积室转移到缓冲室，抽空蒸镀室，并在缓冲室内保持比在蒸气中更大的内部压力 沉积室。 在一些实施例中，该方法包括将衬底从传送室转移到通过另一衬底处理机器人耦合到传送室的PVD室，并将另一材料沉积在PVD室内的衬底上。