公开(公告)号：US5406906A

公开(公告)日：1995-04-18

申请号：US181717

申请日：1994-01-18

申请人： Lajos Rimai ,  Richard M. Ager ,  Willes H. Weber

发明人： Lajos Rimai ,  Richard M. Ager ,  Willes H. Weber

IPC分类号： C30B23/00 ,  C30B23/02 ,  H01L21/20 ,  H01L21/203 ,  C30B25/10

CPC分类号： C30B23/02 ,  C30B29/36 ,  Y10S117/904

摘要： A crystalline silicon carbide film is grown on a heated crystalline silicon substrate by laser ablation of a pure carbon target. For substrate temperatures during deposition above 1000.degree. C. and single crystal silicon substrates the resulting SiC film is expitaxially oriented with respect to the substrate. Films of stoichiometric SiC are grown up to thicknesses of about 4000.ANG.. These films grow on top of the silicon substrate and whereas the source of carbon for the film is from the ablation plume of the carbon target the source of the silicon is from the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 .mu.m with part of the silicon being supplied by the ablation plume of the silicon target.

摘要翻译： 通过纯碳靶的激光烧蚀，在加热的晶体硅衬底上生长结晶碳化硅膜。 对于高于1000℃的沉积期间的衬底温度和单晶硅衬底，所得到的SiC膜相对于衬底被外延取向。 化学计量的SiC的膜生长至约4000安培的厚度。 这些膜在硅衬底的顶部生长，而膜的碳源来自碳靶的消融羽流，硅源来自衬底。 通过使用纯碳和纯硅靶的交替烧蚀的方法，可以将类似的外延膜生长至超过1μm的厚度，其中一部分硅由硅靶的消融羽提供。