公开(公告)号：US5650634A

公开(公告)日：1997-07-22

申请号：US522893

申请日：1995-09-01

申请人： Vladimir V. Mitin ,  Viatcheslav Kochelap ,  Rimvydas Mickevicius ,  Mitra Dutta ,  Michael A. Stroscio

发明人： Vladimir V. Mitin ,  Viatcheslav Kochelap ,  Rimvydas Mickevicius ,  Mitra Dutta ,  Michael A. Stroscio

IPC分类号： H01L29/76 ,  H01L29/06

CPC分类号： H01L29/76

摘要： A submatrix of semiconductor material contains plural electron conduction annels in either or both series and parallel arrangements. Electrons in the channels are confined by the submatrix and a surrounding main matrix provides photon confinement within the submatrix for nonequilibrium phonons which are mutually interchanged between channels. The confinement enhances the efficiency of energy and momentum transfer by means of nonequilibrium phonons. Embodiments of the invention as a transformer, bistable switch, controlled switch and amplifier are disclosed.

摘要翻译： 半导体材料的子矩阵在串联和并联布置中都包含多个电子传导通道。 通道中的电子被子矩阵约束，并且周围的主矩阵在子矩阵内提供在通道之间相互交换的非平衡声子之间的光子约束。 限制通过非平衡声子提高能量和动量传递的效率。 公开了作为变压器，双稳态开关，受控开关和放大器的本发明的实施例。

公开(公告)号：US5459334A

公开(公告)日：1995-10-17

申请号：US309214

申请日：1994-09-20

申请人： Mitra Dutta ,  Michael A. Stroscio ,  Vladimir V. Mitin ,  Rimvydas Mickevicius

发明人： Mitra Dutta ,  Michael A. Stroscio ,  Vladimir V. Mitin ,  Rimvydas Mickevicius

IPC分类号： H01L29/12 ,  H01L29/205 ,  H01L31/08

CPC分类号： B82Y10/00 ,  H01L29/125

摘要： A quantum wire embedded in another material or a quantum wire which is free standing. Specifically, the quantum wire structure is fabricated such that a quantum well semiconductor material, for example Gallium Arsenide (GaAS), is embedded in a quantum barrier semiconductor material, for example Aluminum Arsenide (AlAs). Preferably, the entire quantum wire structure is engineered to form multiple subbands and is limited to a low dimensional quantum structure. The dimensions of the quantum wire structure are preferably around 150.times.250 .ANG.. This structure has a negative absolute conductance at a predetermined voltage and temperature. As a result of the resonant behavior of the density of states, the rates of electron scattering in the passive region (acoustic phonon and ionized impurity scattering as well as absorption of optical phonons) decrease dramatically as the electron kinetic energy increases.

摘要翻译： 嵌入另一种材料中的量子线或自由站立的量子线。 具体地，量子线结构被制造成使量子阱半导体材料，例如砷化镓（GaAS）被嵌入量子势垒半导体材料，例如砷化铝（AlAs）中。 优选地，整个量子线结构被设计成形成多个子带并被限制于低维量子结构。 量子线结构的尺寸优选为150×250左右。 该结构在预定电压和温度下具有负的绝对电导。 作为状态密度的共振行为的结果，随着电子动能增加，被动区域中的电子散射速率（声学声子和离子化杂质散射以及光学声子的吸收）显着降低。