-
公开(公告)号：US6010959A
公开(公告)日：2000-01-04
申请号：US152729
申请日：1998-09-14
IPC分类号： H01L23/532 , H01L29/34 , B44C1/22
CPC分类号： H01L23/5329 , H01L2924/0002 , Y10S257/90
摘要： A method is provided for improving the adhesion between a photoresist layer and a dielectric, and an integrated circuit formed according to the same. A conformal dielectric layer is formed over the integrated circuit. An interlevel dielectric layer is formed over the conformal dielectric layer. The interlevel dielectric layer is doped such that the doping concentration allows the layer to reflow while partially inhibiting the adhesion of the doped layer to photoresist at an upper surface of the doped layer. An undoped dielectric layer is formed over the doped dielectric layer. A photoresist layer is formed and patterned over the undoped dielectric layer which adheres to the undoped dielectric layer. The undoped dielectric, the interlevel dielectric and the conformal dielectric layers are etched to form an opening exposing a portion of an underlying conductive region.
摘要翻译： 提供了用于改善光致抗蚀剂层和电介质之间的粘合性的方法，以及根据该电路形成的集成电路。 在集成电路上形成保形介电层。 在保形电介质层上形成层间电介质层。 掺杂层间电介质层使得掺杂浓度允许层回流，同时部分地抑制掺杂层在掺杂层的上表面处的光致抗蚀剂的粘附。 在掺杂介电层上形成未掺杂的介电层。 在附着于未掺杂的介电层的未掺杂的电介质层上形成并图案化光致抗蚀剂层。 对未掺杂的电介质，层间电介质和共形绝缘层进行蚀刻以形成露出一部分下面的导电区域的开口。
-
2.发明授权Contact structure for improving photoresist adhesion on a dielectric layer 失效用于改善介电层上的光致抗蚀剂粘附性的接触结构
公开(公告)号：US5877541A
公开(公告)日：1999-03-02
申请号：US905918
申请日：1997-08-04
IPC分类号： H01L23/532 , H01L23/58
CPC分类号： H01L23/5329 , H01L2924/0002 , Y10S257/90
摘要： A method is provided for improving the adhesion between a photoresist layer and a dielectric, and an integrated circuit formed according to the same. A conformal dielectric layer is formed over the integrated circuit. An interlevel dielectric layer is formed over the conformal dielectric layer. The interlevel dielectric layer is doped such that the doping concentration allows the layer to reflow while partially inhibiting the adhesion of the doped layer to photoresist at an upper surface of the doped layer. An undoped dielectric layer is formed over the doped dielectric layer. A photoresist layer is formed and patterned over the undoped dielectric layer which adheres to the undoped dielectric layer. The undoped dielectric, the interlevel dielectric and the conformal dielectric layers are etched to form an opening exposing a portion of an underlying conductive region.
摘要翻译： 提供了用于改善光致抗蚀剂层和电介质之间的粘合性的方法，以及根据该电路形成的集成电路。 在集成电路上形成保形介电层。 在保形电介质层上形成层间电介质层。 掺杂层间电介质层使得掺杂浓度允许层回流，同时部分地抑制掺杂层在掺杂层的上表面处的光致抗蚀剂的粘附。 在掺杂介电层上形成未掺杂的介电层。 在附着于未掺杂的介电层的未掺杂的电介质层上形成并图案化光致抗蚀剂层。 对未掺杂的电介质，层间电介质和共形绝缘层进行蚀刻以形成露出一部分下面的导电区域的开口。
-
搜索结果
2 条记录 (耗时 0.008 秒)
