METHOD AND APPARATUS FOR DESIGNING AN INTEGRATED CIRCUIT
    1.
    发明申请
    METHOD AND APPARATUS FOR DESIGNING AN INTEGRATED CIRCUIT 有权
    用于设计集成电路的方法和装置

    公开(公告)号:US20100333048A1

    公开(公告)日:2010-12-30

    申请号:US12377664

    申请日:2006-08-16

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: Method and apparatus for designing an integrated circuit by calculating an optimised reticle layout design from an IC layout design and a model describing an optical system for transferring the IC layout design onto a semiconductor wafer using a reticle, wherein the IC layout design comprises features defined by a plurality of boundaries. Approximating the plurality of boundaries to generate an approximated IC layout design suitable for the manufacture of the IC. Performing OPC simulation on at least a portion of the approximated IC layout design.

    摘要翻译: 通过从IC布局设计计算优化的标线布局设计和描述用于使用掩模版将IC布局设计转移到半导体晶片的光学系统的模型来设计集成电路的方法和装置,其中IC布局设计包括由 多个边界。 近似多个边界以产生适于制造IC的近似IC布局设计。 在近似IC布局设计的至少一部分上执行OPC模拟。

    Method and apparatus for designing an integrated circuit using inverse lithography technology
    3.
    发明授权
    Method and apparatus for designing an integrated circuit using inverse lithography technology 有权
    使用反光刻技术设计集成电路的方法和装置

    公开(公告)号:US08370773B2

    公开(公告)日:2013-02-05

    申请号:US12377664

    申请日:2006-08-16

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: Method and apparatus for designing an integrated circuit by calculating an optimised reticle layout design from an IC layout design and a model describing an optical system for transferring the IC layout design onto a semiconductor wafer using a reticle, wherein the IC layout design comprises features defined by a plurality of boundaries. Approximating the plurality of boundaries to generate an approximated IC layout design suitable for the manufacture of the IC. Performing OPC simulation on at least a portion of the approximated IC layout design.

    摘要翻译: 通过从IC布局设计计算优化的标线布局设计和描述用于使用掩模版将IC布局设计转移到半导体晶片的光学系统的模型来设计集成电路的方法和装置,其中IC布局设计包括由 多个边界。 近似多个边界以产生适于制造IC的近似IC布局设计。 在近似IC布局设计的至少一部分上执行OPC模拟。