公开(公告)号：US5912187A

公开(公告)日：1999-06-15

申请号：US871489

申请日：1997-06-10

申请人： Joseph Paul Blasko ,  Robert John Griffin

发明人： Joseph Paul Blasko ,  Robert John Griffin

IPC分类号： H01L21/28 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/32139 ,  H01L21/28123 ,  H01L21/32137

摘要： A method of fabricating an integrated circuit device is described in which fluorine ions are implanted into the patterned photoresist and the exposed polysilicon layer prior to etching the polysilicon. The ion implantation minimizes the chemical reaction between the photoresist and etchant, thereby significantly reducing the formation of polysilicon etch delta, and also significantly reducing etch delta variation due to pattern density variations.

摘要翻译： 描述了一种制造集成电路器件的方法，其中在蚀刻多晶硅之前将氟离子注入到图案化的光致抗蚀剂和暴露的多晶硅层中。 离子注入使光致抗蚀剂和蚀刻剂之间的化学反应最小化，从而显着减少了多晶硅蚀刻三角形的形成，并且还显着减少了由于图案密度变化引起的蚀刻δ变化。

公开(公告)号：US20080261917A1

公开(公告)日：2008-10-23

申请号：US11574531

申请日：2005-08-26

申请人： Hendrika Maria Gerarda Willems ,  Per Kallblad ,  Ian Robert Hardcastle ,  Robert John Griffin ,  Bernard Thomas Golding ,  John Lunec ,  Martin E.M. Noble ,  David R. Newell ,  Alan H. Calvert

发明人： Hendrika Maria Gerarda Willems ,  Per Kallblad ,  Ian Robert Hardcastle ,  Robert John Griffin ,  Bernard Thomas Golding ,  John Lunec ,  Martin E.M. Noble ,  David R. Newell ,  Alan H. Calvert

IPC分类号： A61K31/695 ,  C07D209/44 ,  A61K31/4035 ,  C07D213/02 ,  C07D295/00 ,  A61P35/00 ,  A61K31/496 ,  A61K31/4439 ,  C07D233/54 ,  A61K31/4164

CPC分类号： C07D209/50 ,  C07D209/48 ,  C07D401/12 ,  C07D403/06 ,  C07D403/12 ,  C07D405/06 ,  C07D405/12

摘要： A compound of formula or a prodrug and/or a pharmaceutically acceptable salt thereof, wherein X is O, N or S; R1 is hydrogen, halo, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted hydroxyalkyl, substituted or unsubstituted alkylamine, alkoxy, substituted or unsubstituted aryl or heteroaryl, and substituted or unsubstituted aralkyl or heteroaralkyl; R2 is hydrogen, halo, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted hydroxyalkyl substituted or unsubstituted alkylamine, alkoxy, substituted or unsubstituted aryl or heteroaryl, and substituted or unsubstituted aralkyl or heteroalkyl; R3 is hydrogen, halo, hydroxy, substituted or unsubstituted alloy substituted or unsubstituted hydroxyalkyl, substituted or unsubstituted alkylamine alkoxy, substituted or unsubstituted aryl or heteroaryl, and substituted or unsubstituted aralkyl or heteroalkyl; and R4-R7, is used to represent groups R4, R5, R6 and R7 which are H, OH, alkyl, alkoxy, alkylamine, hydroxyalkyl, halo, CF3, NH2, NO2, COOH, C=0.

摘要翻译： 式或其前药和/或其药学上可接受的盐的化合物，其中X为O，N或S; 取代或未取代的烷基，取代或未取代的烷基胺，烷氧基，取代或未经取代的芳基或杂芳基，以及取代或未取代的芳烷基或杂芳烷基; R 1是氢，卤素，羟基， R 2是氢，卤素，羟基，取代或未取代的烷基，取代或未取代的羟基烷基取代或未取代的烷基胺，烷氧基，取代或未取代的芳基或杂芳基，以及取代或未取代的芳烷基或杂烷基; 取代或未取代的烷基烷氧基，取代或未取代的芳基或杂芳基，以及取代或未取代的芳烷基或杂烷基; 和R 4〜R 7，用于表示R 4，R 5，R 5， 6和7是H，OH，烷基，烷氧基，烷基胺，羟基烷基，卤素，CF 3，NH 2， NO 2，COOH，C = 0。