公开(公告)号：US06391172B2

公开(公告)日：2002-05-21

申请号：US09139240

申请日：1998-08-25

申请人： Robert S. Cole ,  Mathew S. Cooper ,  Stephen P. Turner ,  Yinshi Liu ,  Michael McCarty ,  Rodney L. Scagline

发明人： Robert S. Cole ,  Mathew S. Cooper ,  Stephen P. Turner ,  Yinshi Liu ,  Michael McCarty ,  Rodney L. Scagline

IPC分类号： C22C1900

CPC分类号： C22C19/07 ,  C22F1/10 ,  C23C14/3414

摘要： A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 422° C.). Annealing the material, at a temperature in the range 300-422° C. for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-35° from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.

摘要翻译： 公开了一种高纯度钴溅射靶，其包含面心立方（fcc）相和六方密堆积（hcp）相，其中X射线衍射峰强度Ifcc（200）/ Ihcp（10 {overscore（1）} 1）小于通过从熔融的高温将fcc钴冷却至室温获得的高纯度钴材料的相同比例的值。 高纯度钴被定义为氧含量不大于500ppm，Ni含量不超过200ppm，Fe，Al和Cr含量不大于50ppm，Na和K小于0.5 ppm。 公开的溅射靶是通过对材料进行冷加工处理（小于422℃）来制造的。 在300-422℃的温度范围内将材料退火几个小时，在冷加工处理之间显着地增加可以赋予材料的冷加工量。 高纯度钴以这样的方式变形，以使（0002）hcp平面从目标法线倾斜10-35°。 上述相比例和晶体结构显着提高了溅射效率和材料利用率。

公开(公告)号：US06833058B1

公开(公告)日：2004-12-21

申请号：US09695814

申请日：2000-10-24

申请人： Stephen P. Turner ,  Joseph E. Green ,  Rodney L. Scagline ,  Yun Xu

发明人： Stephen P. Turner ,  Joseph E. Green ,  Rodney L. Scagline ,  Yun Xu

IPC分类号： C23C1434

CPC分类号： C22B34/14 ,  C22B34/1263 ,  C23C14/3414

摘要： The invention encompasses methods of forming titanium-based mixed-metal materials and zirconium-based mixed-metal materials utilizing one or more of a reduction process, electrolysis process and iodide process. The invention also encompasses a sputtering target comprising zirconium and one or more elements selected from the group consisting of Al, B, Ba, Be, Ca, Ce, Co, Cs, Dy, Er, Fe, Gd, Hf, Ho, La, Mg, Mn, Mo, Nb, Nd, Ni, Pr, Sc, Sm, Sr, Ta, Ti, V, W, Y, and Yb. The invention also encompasses a sputtering target comprising titanium and boron.

摘要翻译： 本发明包括利用还原法，电解法和碘化法中的一种或多种形成钛基混合金属材料和锆基混合金属材料的方法。 本发明还包括包含锆和选自Al，B，Ba，Be，Ca，Ce，Co，Cs，Dy，Er，Fe，Gd，Hf，Ho，La中的一种或多种元素的溅射靶， Mg，Mn，Mo，Nb，Nd，Ni，Pr，Sc，Sm，Sr，Ta，Ti，V，W，Y和Yb。 本发明还包括包含钛和硼的溅射靶。

公开(公告)号：US06585866B2

公开(公告)日：2003-07-01

申请号：US10104582

申请日：2002-03-21

申请人： Robert S. Cole ,  Mathew S. Cooper ,  Stephen P. Turner ,  Yinshi Liu ,  Michael McCarty ,  Rodney L. Scagline

发明人： Robert S. Cole ,  Mathew S. Cooper ,  Stephen P. Turner ,  Yinshi Liu ,  Michael McCarty ,  Rodney L. Scagline

IPC分类号： C22C1907

CPC分类号： C22C19/07 ,  C22F1/10 ,  C23C14/3414

摘要： A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 4221C). Annealing the material, at a temperature in the range 300-4221C for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-351 from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.

摘要翻译： 公开了一种高纯度钴溅射靶，其包含面心立方（fcc）相和六方密堆积（hcp）相，其中X射线衍射峰强度Ifcc（200）/ Ihcp（10 1）小于通过从熔融的高温将fcc钴冷却至室温而获得的高纯度钴材料的相同比例的值。 高纯度钴被定义为氧含量不大于500ppm，Ni含量不超过200ppm，Fe，Al和Cr含量不大于50ppm，Na和K小于0.5 ppm。 所公开的溅射靶是通过对材料进行冷加工处理（小于4221℃）来制造的。 在300-4221℃的温度范围内将材料退火几个小时，在冷加工处理之间显着增加可以赋予材料的冷加工量。 高纯度钴以这样的方式变形，使得（0002）hcp平面从目标法线倾斜10-351。 上述相比例和晶体结构显着提高了溅射效率和材料利用率。