公开(公告)号：US20130256777A1

公开(公告)日：2013-10-03

申请号：US13434994

申请日：2012-03-30

申请人： Antoine Khoueir ,  YoungPil Kim ,  Rodney Virigil Bowman

发明人： Antoine Khoueir ,  YoungPil Kim ,  Rodney Virigil Bowman

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L29/66825 ,  H01L27/11519 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/401 ,  H01L29/42324 ,  H01L29/7889

摘要： Memory arrays that include a first memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate; and a second memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate, wherein the first memory cell and the second memory cell are positioned parallel to each other.