公开(公告)号：US07294579B1

公开(公告)日：2007-11-13

申请号：US11308872

申请日：2006-05-18

申请人： Ying-Chou Chi ,  Rong-Duo Wang ,  Ying-Tsung Tu ,  Chao-Huan Hsu

发明人： Ying-Chou Chi ,  Rong-Duo Wang ,  Ying-Tsung Tu ,  Chao-Huan Hsu

IPC分类号： H01L21/311

CPC分类号： H01L21/76804 ,  H01L21/7685

摘要： The present invention relates to a method for forming a contact opening. First, a substrate having at least a dielectric layer formed thereon is provided. Then, a photoresist layer having a first opening is formed on the dielectric layer. A plasma etching operation is performed to form a second opening in the dielectric layer, and the first opening is located above the second opening. The bottom part of the first opening has a diameter smaller than that of the top part of the second opening. Thereafter, the photoresist layer is removed from the dielectric layer. Accordingly, at least a portion of the exposed contact opening will not be oxidized to prevent an increase in the resistance between the conductive pattern and the conductive layer that fills in the contact opening.

摘要翻译： 本发明涉及形成接触开口的方法。 首先，提供至少形成有介电层的基板。 然后，在电介质层上形成具有第一开口的光致抗蚀剂层。 执行等离子体蚀刻操作以在电介质层中形成第二开口，并且第一开口位于第二开口上方。 第一开口的底部的直径小于第二开口的顶部的直径。 此后，从电介质层去除光致抗蚀剂层。 因此，暴露的接触开口的至少一部分不会被氧化，以防止导电图案与填充在接触开口中的导电层之间的电阻增加。

公开(公告)号：US20070269988A1

公开(公告)日：2007-11-22

申请号：US11308872

申请日：2006-05-18

申请人： Ying-Chou Chi ,  Rong-Duo Wang ,  Ying-Tsung Tu ,  Chao-Huan Hsu

发明人： Ying-Chou Chi ,  Rong-Duo Wang ,  Ying-Tsung Tu ,  Chao-Huan Hsu

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/76804 ,  H01L21/7685

摘要： The present invention relates to a method for forming a contact opening. First, a substrate having at least a dielectric layer formed thereon is provided. Then, a photoresist layer having a first opening is formed on the dielectric layer. A plasma etching operation is performed to form a second opening in the dielectric layer, and the first opening is located above the second opening. The bottom part of the first opening has a diameter smaller than that of the top part of the second opening. Thereafter, the photoresist layer is removed from the dielectric layer. Accordingly, at least a portion of the exposed contact opening will not be oxidized to prevent an increase in the resistance between the conductive pattern and the conductive layer that fills in the contact opening.

摘要翻译： 本发明涉及形成接触开口的方法。 首先，提供至少形成有介电层的基板。 然后，在电介质层上形成具有第一开口的光致抗蚀剂层。 执行等离子体蚀刻操作以在电介质层中形成第二开口，并且第一开口位于第二开口上方。 第一开口的底部的直径小于第二开口的顶部的直径。 此后，从电介质层去除光致抗蚀剂层。 因此，暴露的接触开口的至少一部分不会被氧化，以防止导电图案和填充在接触开口中的导电层之间的电阻增加。