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    Process for the production of polycrystalline silicon coatings by electrolytic deposition of silicon
    1.
    发明授权
    Process for the production of polycrystalline silicon coatings by electrolytic deposition of silicon 失效
    通过电解沉积硅生产多晶硅涂层的工艺

    公开(公告)号：US4773973A

    公开(公告)日：1988-09-27

    申请号：US165492

    申请日：1988-03-08

    申请人： Hans R. Gruniger ,  Rudolf Kern ,  Paul Rys

    发明人： Hans R. Gruniger ,  Rudolf Kern ,  Paul Rys

    IPC分类号： C25D9/08 ,  C25D3/66

    CPC分类号： C25D3/66 ,  Y10S205/915

    摘要： A novel process for the electrolytic deposition of silicon from a melt containing covalent silicon compounds, in particular silicon tetrahalides, and furthermore aluminium halides, alkali metal halides and halides of transition metals is carried out at relatively low temperatures of 100.degree. to 350.degree. C. in an inert atmosphere. The silicon is deposited cathodically or anodically onto electrically conductive material.The silicon coatings are homogeneous and adhere firmly to the substrate. The coated materials can be used for the production of photoconductive or photovoltaic devices.

    摘要翻译： 在含有共价硅化合物，特别是四卤化硅的熔体以及过渡金属的卤化铝，碱金属卤化物和卤化物的熔体中电解沉积硅的新方法在100至350℃的较低温度下进行。 在惰性气氛中。 将硅阴极或阳极沉积到导电材料上。 硅涂层是均匀的并且牢固地粘附到基底上。 涂覆的材料可用于生产光电导或光伏器件。

    Process for the production of polycrystalline silicon coatings by electrolytic deposition of silicon
    2.
    发明授权
    Process for the production of polycrystalline silicon coatings by electrolytic deposition of silicon 失效
    通过电解沉积硅生产多晶硅涂层的工艺

    公开(公告)号：US4759830A

    公开(公告)日：1988-07-26

    申请号：US87635

    申请日：1987-08-18

    申请人： Hans R. Gruniger ,  Rudolf Kern ,  Paul Rys

    发明人： Hans R. Gruniger ,  Rudolf Kern ,  Paul Rys

    IPC分类号： C25D9/08 ,  C25D3/66

    CPC分类号： C25D3/66 ,  Y10S205/915

    摘要： A novel process for the electrolytic deposition of silicon from a melt containing covalent silicon compounds, in particular silicon tetrahalides, and furthermore aluminum halides, alkali metal halides and halides of transition metals is carried out at relatively low temperatures of 100.degree. to 350.degree. C. in an inert temperature. The silicon is deposited cathodically or anodically onto electrically conductive material.The silicon coatings are homogeneous and adhere firmly to the substrate. The coated materials can be used for the production of photoconductive or photovoltaic devices.

    摘要翻译： 在含有共价硅化合物，特别是四卤化硅的熔体以及过渡金属的卤化铝，碱金属卤化物和卤化物的熔体中电解沉积硅的新方法在100至350℃的较低温度下进行。 在惰性温度下。 将硅阴极或阳极沉积到导电材料上。 硅涂层是均匀的并且牢固地粘附到基底上。 涂覆的材料可用于生产光电导或光伏器件。