公开(公告)号：US20110261364A1

公开(公告)日：2011-10-27

申请号：US13091805

申请日：2011-04-21

Applicant: Patricia Marlen NIEVA ,  Ryan Cameron DENOMME

Inventor： Patricia Marlen NIEVA ,  Ryan Cameron DENOMME

IPC: G01J3/45 ,  G01B9/02

CPC classification number: G01N21/554 ,  G01N2021/458 ,  G01N2021/7779

Abstract: The disclosure is directed at an interferometric localized surface plasmon resonance sensor (ILSPR) unit comprising an ILSPR sensor chip, the sensor chip including a localized surface plasmon resonance sensor (LSPR) layer; at least one light source for directing light through the ILSPR sensor chip at the LSPR layer; and a photodetector for sensing a level of light intensity after the light has struck the LSPR layer.

Abstract translation: 本公开涉及包括ILSPR传感器芯片的干涉测量局部表面等离子体共振传感器（ILSPR）单元，所述传感器芯片包括局部表面等离子体共振传感器（LSPR）层; 用于引导光通过LSPR层上的ILSPR传感器芯片的至少一个光源; 以及光检测器，用于在光已经撞击LSPR层之后感测光强度。

公开(公告)号：US08693003B2

公开(公告)日：2014-04-08

申请号：US13091805

申请日：2011-04-21

Applicant: Patricia Marlen Nieva ,  Ryan Cameron Denomme

Inventor： Patricia Marlen Nieva ,  Ryan Cameron Denomme

IPC: G01B9/02 ,  G01J3/45

CPC classification number: G01N21/554 ,  G01N2021/458 ,  G01N2021/7779

Abstract: The disclosure is directed at an interferometric localized surface plasmon resonance sensor (ILSPR) unit comprising an ILSPR sensor chip, the sensor chip including a localized surface plasmon resonance sensor (LSPR) layer; at least one light source for directing light through the ILSPR sensor chip at the LSPR layer; and a photodetector for sensing a level of light intensity after the light has struck the LSPR layer.

Abstract translation: 本公开涉及包括ILSPR传感器芯片的干涉测量局部表面等离子体共振传感器（ILSPR）单元，所述传感器芯片包括局部表面等离子体共振传感器（LSPR）层; 用于引导光通过LSPR层上的ILSPR传感器芯片的至少一个光源; 以及光检测器，用于在光已经撞击LSPR层之后感测光强度。