公开(公告)号：US20080115720A1

公开(公告)日：2008-05-22

申请号：US11983370

申请日：2007-11-07

申请人： Toshiaki Saishoji ,  Koichi Shimomura ,  Ryouta Suewaka ,  Daisuke Ebi

发明人： Toshiaki Saishoji ,  Koichi Shimomura ,  Ryouta Suewaka ,  Daisuke Ebi

IPC分类号： C30B15/00 ,  H01L21/00

CPC分类号： C30B15/14 ,  Y10T117/1068

摘要： A semiconductor single crystal manufacturing apparatus and method are provided which are capable of improving the speed of designing and arranging a silicon single crystal manufacturing apparatus while reducing labor by making it possible to instantaneously find optimum design values and optimum arrangement for a cooler without requiring a lot of labor or time, regardless of a housing structure of a CZ furnace, in-furnace members' configuration, and manufacturing conditions. Stable manufacture of defect-free silicon single crystals is also made possible by designing and arranging the cooler such that when a heat absorption amount of the cooler is denoted by Q and a semiconductor single crystal radius is denoted by r, the heat absorption amount of the cooler Q satisfies r2/1100≦Q≦r2/400, or alternatively Q satisfies r2.7/20500≦Q≦r2.7/19300.

摘要翻译： 提供一种半导体单晶制造装置和方法，其能够通过使得可以立即找到最佳设计值并且不需要很多的冷却器的最佳布置来提高设计和布置硅单晶制造装置的速度，同时减少劳动 不管CZ炉的房屋结构，炉内构件的构造和制造条件如何。 通过设计和布置冷却器也可以稳定地制造无缺陷的硅单晶，使得当冷却器的吸热量用Q表示，半导体单晶半径由r表示时，吸热量 冷却器Q满足r <2> / 1100 <= Q <= R 2/400，或者Q满足r <2.7 / 20500 <= Q < = R 2.7 / 19300。