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17 条记录 (耗时 0.031 秒)

    Silicon electromagnetic casting apparatus
    1.
    发明授权
    Silicon electromagnetic casting apparatus 有权
    硅电磁铸造设备

    公开(公告)号：US08769993B2

    公开(公告)日：2014-07-08

    申请号：US13814809

    申请日：2010-11-17

    申请人： Daisuke Ebi ,  Mitsuo Yoshihara

    发明人： Daisuke Ebi ,  Mitsuo Yoshihara

    IPC分类号： C03B15/00

    CPC分类号： B22D27/04 ,  C01B33/02 ,  C30B11/001 ,  C30B29/06

    摘要： Provided is a silicon electromagnetic casting apparatus that is capable of stably producing polycrystalline silicon used as a solar cell substrate material, having a bottomless cold mold and an induction heating coil, the apparatus for pulling down the silicon melted through electromagnetic induction heating by means of the induction coil and solidifying the silicon melt; further including a plasma torch for generating a transferable plasma arc and a top heater configured so as to face a top surface of the molten silicon, the top heater for generating heat through electromagnetic induction by means of the induction coil. The apparatus enables, upon production of a high quality polycrystalline silicon ingot as a solar cell substrate material along with plasma heating, stable production thereof without cracking in a final solidification portion.

    摘要翻译： 本发明提供一种能够稳定地制造用作太阳能电池基板材料的多晶硅的硅电磁铸造装置，具有无底冷模和感应加热线圈，该装置通过电磁感应加热而熔化的硅 感应线圈并固化硅熔体; 还包括用于产生可转移等离子体电弧的等离子体焰炬和配置为面对熔融硅的顶表面的顶部加热器，所述顶部加热器通过感应线圈通过电磁感应产生热量。 该装置能够在生产高质量的多晶硅锭作为太阳能电池基板材料以及等离子体加热时，在最终凝固部分中稳定地生产而不会发生裂纹。

    Apparatus and method for manufacturing semiconductor single crystal
    4.
    发明申请
    Apparatus and method for manufacturing semiconductor single crystal 审中-公开
    半导体单晶制造装置及方法

    公开(公告)号：US20080115720A1

    公开(公告)日：2008-05-22

    申请号：US11983370

    申请日：2007-11-07

    申请人： Toshiaki Saishoji ,  Koichi Shimomura ,  Ryouta Suewaka ,  Daisuke Ebi

    发明人： Toshiaki Saishoji ,  Koichi Shimomura ,  Ryouta Suewaka ,  Daisuke Ebi

    IPC分类号： C30B15/00 ,  H01L21/00

    CPC分类号： C30B15/14 ,  Y10T117/1068

    摘要： A semiconductor single crystal manufacturing apparatus and method are provided which are capable of improving the speed of designing and arranging a silicon single crystal manufacturing apparatus while reducing labor by making it possible to instantaneously find optimum design values and optimum arrangement for a cooler without requiring a lot of labor or time, regardless of a housing structure of a CZ furnace, in-furnace members' configuration, and manufacturing conditions. Stable manufacture of defect-free silicon single crystals is also made possible by designing and arranging the cooler such that when a heat absorption amount of the cooler is denoted by Q and a semiconductor single crystal radius is denoted by r, the heat absorption amount of the cooler Q satisfies r2/1100≦Q≦r2/400, or alternatively Q satisfies r2.7/20500≦Q≦r2.7/19300.

    摘要翻译： 提供一种半导体单晶制造装置和方法，其能够通过使得可以立即找到最佳设计值并且不需要很多的冷却器的最佳布置来提高设计和布置硅单晶制造装置的速度，同时减少劳动 不管CZ炉的房屋结构，炉内构件的构造和制造条件如何。 通过设计和布置冷却器也可以稳定地制造无缺陷的硅单晶，使得当冷却器的吸热量用Q表示，半导体单晶半径由r表示时，吸热量 冷却器Q满足r <2> / 1100 <= Q <= R 2/400，或者Q满足r <2.7 / 20500 <= Q < = R 2.7 / 19300。

    Apparatus for pulling single crystal by CZ method
    8.
    发明授权
    Apparatus for pulling single crystal by CZ method 有权
    用CZ法拉单晶的装置

    公开(公告)号：US07244309B2

    公开(公告)日：2007-07-17

    申请号：US11146541

    申请日：2005-06-07

    申请人： Daisuke Ebi ,  Shigeo Morimoto

    发明人： Daisuke Ebi ,  Shigeo Morimoto

    IPC分类号： C30B35/00

    CPC分类号： C30B15/206 ,  C30B15/14 ,  C30B15/30 ,  C30B29/06 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

    摘要翻译： 在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。 此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。 为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面 破折号的脖子法。