公开(公告)号：US20050021330A1

公开(公告)日：2005-01-27

申请号：US10776240

申请日：2004-02-12

申请人： Ryuji Mano

发明人： Ryuji Mano

IPC分类号： G10L11/00 ,  G10L15/02 ,  G10L15/10 ,  G10L15/14 ,  G10L15/28 ,  G10L15/00

CPC分类号： G10L15/148 ,  G10L2015/025

摘要： In a speech recognition apparatus, a feature extracting portion extracts feature parameters by sliding a plurality of frames corresponding to time windows each having a prescribed length of time with a successively increasing time width, over an input speech signal. A word lexicon database stores standard pattern data in correspondence with phoneme patterns of the input speech. A recognition processing portion collates the feature parameter extracted by the feature extracting portion with the standard pattern data to recognize a corresponding phoneme, and outputs a recognition result.

摘要翻译： 在语音识别装置中，特征提取部通过在输入语音信号上滑动具有规定时间长度的时间窗对应的多个帧，并以连续增加的时间宽度来提取特征参数。 字词典数据库存储与输入语音的音素模式相对应的标准模式数据。 识别处理部分将由特征提取部分提取的特征参数与标准图案数据进行比较，以识别对应的音素，并输出识别结果。

公开(公告)号：US20130085762A1

公开(公告)日：2013-04-04

申请号：US13563615

申请日：2012-07-31

申请人： Ryuji MANO

发明人： Ryuji MANO

IPC分类号： G10L19/00

CPC分类号： G10L19/265

摘要： An audio encoding device capable of efficient encoding processing includes: a storage unit which stores audio data; a data acquisition controller which acquires the audio data from the storage unit; a transformation unit which processes an audio data signal outputted from the data acquisition unit for frequency transformation; a harmonic overtone generation/synthesizing unit which generates a harmonic based on a first output wave out of an output wave of the transformation unit and synthesizes the harmonic and a second output wave out of the output wave of the transformation unit, the second output wave being higher in frequency than the first output wave; and an encoder which subjects an output from the harmonic overtone generation/synthesizing unit to encoding processing.

摘要翻译： 能够进行高效编码处理的音频编码装置包括：存储单元，存储音频数据; 数据采集​​控制器，从存储单元获取音频数据; 变换单元，处理从数据获取单元输出的音频数据信号进行频率变换; 谐波泛音生成/合成单元，其根据所述变换单元的输出波产生基于第一输出波的谐波，并且从所述变换单元的输出波中合成所述谐波和第二输出波，所述第二输出波为 频率高于第一输出波; 以及将来自谐波泛音生成/合成单元的输出进行编码处理的编码器。

公开(公告)号：US06759875B2

公开(公告)日：2004-07-06

申请号：US10120572

申请日：2002-04-12

申请人： Ryuji Mano ,  Hiromi Notani

发明人： Ryuji Mano ,  Hiromi Notani

IPC分类号： H03K301

CPC分类号： H03L7/0995 ,  H03K3/012 ,  H03K3/0315

摘要： Backgate biases of MOS transistors for generating a bias voltage in a bias voltage generation circuit generating the bias voltages are set shallow and backgate biases of MOS transistors of delay circuits of a ring oscillator constituting a clock generation circuit are set shallow. Thereby, a voltage range and a frequency range of a voltage controlled generation circuit to implement a phase synchronizing loop are both extended.

摘要翻译： 在产生偏置电压的偏置电压产生电路中产生偏置电压的MOS晶体管的背栅极偏置被设定为较浅，并且构成时钟发生电路的环形振荡器的延迟电路的MOS晶体管的背栅极偏置被设置得较浅。 因此，实现相位同步回路的电压控制生成电路的电压范围和频率范围都被扩展。

公开(公告)号：US06570456B2

公开(公告)日：2003-05-27

申请号：US10152009

申请日：2002-05-22

申请人： Ryuji Mano ,  Tsutomu Yoshimura

发明人： Ryuji Mano ,  Tsutomu Yoshimura

IPC分类号： H03L700

CPC分类号： H03L7/0805 ,  H03L7/07 ,  H03L7/0891 ,  H03L7/0995 ,  H03L7/0997 ,  H03L2207/06

摘要： A signal according to a phase difference in a first phase-locked loop is transferred to a power supply line as an operation power supply voltage for a first oscillation circuit included in the first phase-locked loop. The potential of the power supply line is supplied to a second oscillation circuit in a second phase-locked loop as an operation power supply voltage. The second phase-locked loop is used to generate a clock signal phase-synchronized to the input clock signal. Consequently, a clock generator is implemented that oscillates at a central frequency to generate a recovered clock signal even when a variation is caused in a manufacturing parameter.

公开(公告)号：US06339554B1

公开(公告)日：2002-01-15

申请号：US09705731

申请日：2000-11-06

申请人： Ryuji Mano

发明人： Ryuji Mano

IPC分类号： G11C700

CPC分类号： G11C29/70 ,  G11C29/785

摘要： The semiconductor memory device capable of performing a repair using only the fuses for programming a defective address is provided. The semiconductor memory device is provided with at least two replacement programming circuits. Each replacement programming circuit includes a programming circuit for programming a defective address. An output of each replacement programming circuit is used as a signal for indicating whether to perform or not to perform a replacement. A word line that cannot be repaired by one replacement programming circuit is repaired using an output from another replacement programming circuit.

摘要翻译： 提供能够仅使用用于对缺陷地址进行编程的保险丝进行修复的半导体存储器件。 半导体存储器件设置有至少两个替换编程电路。 每个替换编程电路包括用于编程缺陷地址的编程电路。 每个替换编程电路的输出用作指示是否执行替换的信号。 由一个替换编程电路无法修复的字线使用另一个替代编程电路的输出进行修复。