公开(公告)号：US07470559B2

公开(公告)日：2008-12-30

申请号：US11297973

申请日：2005-12-08

申请人： Sébastien Jouan ,  Michel Marty

发明人： Sébastien Jouan ,  Michel Marty

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/1085 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for forming a buried mirror in a semiconductor component includes the steps of forming a structure comprising a semiconductor layer laid on an insulating layer covering a substrate; forming one or several openings in the semiconductor layer emerging at the surface of the insulating layer; eliminating a portion of the insulating layer, whereby a recess is formed; forming a second thin insulating layer against the wall of the recess; and forming a metal layer in the recess against the second insulating layer.

摘要翻译： 在半导体部件中形成掩模反射镜的方法包括以下步骤：形成包括覆盖在基板上的绝缘层上的半导体层的结构; 在半导体层中形成在绝缘层的表面出现的一个或几个开口; 消除绝缘层的一部分，由此形成凹部; 在所述凹部的壁上形成第二薄绝缘层; 以及在所述凹部中在所述第二绝缘层上形成金属层。

公开(公告)号：US06642096B2

公开(公告)日：2003-11-04

申请号：US09947190

申请日：2001-09-05

申请人： Didier Dutartre ,  Alain Chantre ,  Michel Marty ,  Sébastien Jouan

发明人： Didier Dutartre ,  Alain Chantre ,  Michel Marty ,  Sébastien Jouan

IPC分类号： H01L218249

CPC分类号： H01L29/66242 ,  H01L29/1004 ,  H01L29/66272

摘要： A method of manufacturing a bipolar transistor in a single-crystal silicon substrate of a first conductivity type, including a step of carbon implantation at the substrate surface followed by an anneal step, before forming, by epitaxy, the transistor base in the form of a single-crystal semiconductor multilayer including at least a lower layer, a heavily-doped median layer of the second conductivity type, and an upper layer that contacts a heavily-doped emitter of the first conductivity type.

公开(公告)号：US06656812B1

公开(公告)日：2003-12-02

申请号：US09717825

申请日：2000-11-21

申请人： Michel Marty ,  Didier Dutartre ,  Alain Chantre ,  Sébastien Jouan ,  Pierre Llinares

发明人： Michel Marty ,  Didier Dutartre ,  Alain Chantre ,  Sébastien Jouan ,  Pierre Llinares

IPC分类号： H01L21331

CPC分类号： H01L29/0895

摘要： A vertical bipolar transistor includes a semiconductor substrate, an extrinsic collector layer in the semiconductor substrate, an intrinsic collector on the extrinsic collector, a lateral isolating region surrounding an upper part of the intrinsic collector, an offset extrinsic collector well, a base including a semiconductor region above the intrinsic collector and above the lateral isolating region including at least one silicon layer, and a doped emitter surrounded by the base. The doped emitter may include first and second parts. The first part may be formed from single-crystal silicon and in direct contact with the upper surface of the semiconductor region in a predetermined window in the upper surface above the intrinsic collector. The second part may be formed from polycrystalline silicon. The two parts of the emitter may be separated by a separating oxide layer spaced apart from the emitter-base junction of the transistor.

摘要翻译： 垂直双极晶体管包括半导体衬底，半导体衬底中的非本征集电极层，非本征集电极上的本征集电极，围绕本征集电极的上部的横向隔离区，偏移的外在集电极阱，包括半导体 在包含至少一个硅层的横向隔离区域上方以及由该基极包围的掺杂发射极之上。 掺杂发射器可以包括第一和第二部分。 第一部分可以由单晶硅形成，并且在本征收集器上方的上表面中的预定窗口中与半导体区域的上表面直接接触。 第二部分可以由多晶硅形成。 发射极的两个部分可以通过与晶体管的发射极 - 基极结间隔开的分离氧化物层来分离。