公开(公告)号：US20030207569A1

公开(公告)日：2003-11-06

申请号：US09858400

申请日：2001-05-16

Applicant: STMicroelectronics S.A. and Koninklijke Philips Electronics N.V.

Inventor： Eric Gerritsen ,  Bruno Baylac ,  Marie-Therese Basso

IPC: H01L021/44

CPC classification number: H01L29/66575 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

Abstract: A process for forming a low resistivity titanium silicide layer on the surface of a silicon semiconductor substrate. In the process, an effective amount of a metallic element such as indium, gallium, tin, or lead is implanted or deposited on the surface of the silicon substrate. A titanium layer is deposited on the surface of the silicon substrate, and a rapid thermal annealing of the titanium-coated silicon substrate is performed to form low resistivity titanium silicide. In preferred processes, the metallic element is indium or gallium, and more preferably the metallic element is indium. A semiconductor device that has a titanium silicide layer on the surface of a silicon substrate is also provided.

Abstract translation: 一种在硅半导体衬底的表面上形成低电阻率硅化钛层的工艺。 在该过程中，将有效量的诸如铟，镓，锡或铅的金属元素注入或沉积在硅衬底的表面上。 在硅衬底的表面上沉积钛层，并且执行钛涂覆的硅衬底的快速热退火以形成低电阻率硅化钛。 在优选的方法中，金属元素是铟或镓，更优选金属元素是铟。 还提供了在硅衬底的表面上具有硅化钛层的半导体器件。