公开(公告)号：US5652812A

公开(公告)日：1997-07-29

申请号：US691327

申请日：1996-08-02

申请人： Salim Gurib ,  Joel Jacquet ,  Christine Labourie ,  Elisabeth Gaumont-Goarin

发明人： Salim Gurib ,  Joel Jacquet ,  Christine Labourie ,  Elisabeth Gaumont-Goarin

IPC分类号： H01S5/00 ,  G02B6/12 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/50 ,  H04B10/135

CPC分类号： H04B10/2572 ,  G02B6/12004 ,  H01S5/06256 ,  H01S5/5009

摘要： An integrated opto-electronic component includes an amplifying segment coupled to a tuning segment to provide a wavelength tunable laser oscillator function insensitive to the polarization of optical waves that it receives. The amplifying segment is designed to be insensitive to polarization. The tuning segment includes a Bragg grating and a waveguide dimensioned to procure transversely monomode laser emission with rectilinear polarization. Applications include wavelength converters and stabilized gain amplifiers, in particular for optical transmission.

摘要翻译： 集成光电子部件包括耦合到调谐段的放大段，以提供对其接收的光波的偏振不敏感的波长可调激光振荡器功能。 放大段被设计为对极化不敏感。 调谐段包括布拉格光栅和波导，其尺寸用于获得具有直线偏振的横向单模激光发射。 应用包括波长转换器和稳定增益放大器，特别是用于光传输。

公开(公告)号：US6148015A

公开(公告)日：2000-11-14

申请号：US987382

申请日：1997-12-09

申请人： Joel Jacquet ,  Salim Gurib ,  Francis Doukhan ,  Hugues Le Quellec

发明人： Joel Jacquet ,  Salim Gurib ,  Francis Doukhan ,  Hugues Le Quellec

IPC分类号： G02F1/025 ,  G02B6/12 ,  G02B6/42 ,  H01S5/00 ,  H01S5/026 ,  H01S5/0683 ,  H01S3/19 ,  H01L29/06

CPC分类号： H01S5/0262 ,  G02B6/12004 ,  G02B6/4246 ,  H01S5/0264 ,  H01S5/0683

摘要： A common InP semiconductor substrate device includes a laser emitter H1 for emitting waves having a first wavelength such as 1,300 nm, a photodiode H2 for receiving and detecting waves having a second wavelength such as 1,550 nm, and a separator G absorbing the waves having the first wavelength, the separator being interposed between the laser emitter H1 and the photodiode G for protecting the photodiode against the waves having the first wavelength. An absorption measurement mechanism Q delivers a signal iG representative of the power of the waves absorbed by the separator G, to make it possible to regulate operation of the laser emitter H1. The semiconductor substrate device is particularly applicable to implementing end devices to be installed on subscriber premises for subscribers to optical fiber interactive local area networks.

摘要翻译： 普通的InP半导体衬底器件包括用于发射第一波长例如1,300nm的波长的激光发射器H1，用于接收和检测具有第一波长例如1,550nm的波长的光电二极管H2，以及吸收具有第一波长 波长，分离器介于激光发射器H1和光电二极管G之间，用于保护光电二极管免受具有第一波长的波。 吸收测量机构Q传送表示由分离器G吸收的波的功率的信号iG，使得可以调节激光发射器H1的操作。 半导体衬底器件特别适用于实现用于光纤交互式局域网的用户的用户住宅上安装的终端设备。