公开(公告)号：US12107384B2

公开(公告)日：2024-10-01

申请号：US18494190

申请日：2023-10-25

Applicant: NICHIA CORPORATION

Inventor： Shota Murakami ,  Soichiro Miura

IPC: H01S5/022 ,  H01S5/024 ,  H01S5/026

CPC classification number: H01S5/022 ,  H01S5/02461 ,  H01S5/0262

Abstract: A light emitting device includes: a base having a bottom face and a lateral part surrounding the bottom face and extending upwards from the bottom face, wherein the lateral part has an uppermost face and includes a first stepped portion including a first upper face and a second stepped portion including a second upper face, wherein the first upper face and the second upper face are disposed below the uppermost face, wherein the first upper face and the second upper face are disposed inward of the uppermost face in a top view, and wherein a height of the first stepped portion from the bottom face is lower than a height of the second stepped portion from the bottom face; a semiconductor laser element disposed on the bottom face; and a light reflective member and/or an optical member disposed on the bottom face.

公开(公告)号：US12078596B2

公开(公告)日：2024-09-03

申请号：US16043651

申请日：2018-07-24

Applicant: Quantum-Si Incorporated

Inventor： Jonathan M. Rothberg ,  Benjamin Cipriany ,  Todd Rearick ,  Paul E. Glenn ,  Faisal R. Ahmad ,  Todd Roswech ,  Brittany Lathrop ,  Thomas Connolly

IPC: G01N21/64 ,  H01S5/00 ,  H01S5/02253 ,  H01S5/024 ,  H01S5/026

CPC classification number: G01N21/6486 ,  G01N21/6402 ,  G01N21/6408 ,  G01N21/6454 ,  H01S5/0071 ,  H01S5/02253 ,  H01S5/02461 ,  H01S5/0262 ,  G01N21/648 ,  G01N2021/6482 ,  G01N2201/0221 ,  G01N2201/0873

Abstract: A hand-held bioanalytic instrument is described that can perform massively parallel sample analysis including single-molecule gene sequencing. The instrument includes a pulsed optical source that produces ultrashort excitation pulses and a compact beam-steering assembly. The beam-steering assembly provides automated alignment of excitation pulses to an interchangeable bio-optoelectronic chip that contains tens of thousands of reaction chambers or more. The optical source, beam-steering assembly, bio-optoelectronic chip, and coupling optics register to an alignment structure in the instrument that can form at least one wall of an enclosure and dissipate heat.

公开(公告)号：US20240235152A1

公开(公告)日：2024-07-11

申请号：US18558278

申请日：2021-06-28

Applicant: Mitsubishi Electric Corporation

Inventor： Koichi NAKAMURA ,  Keita MOCHIZUKI

IPC: H01S5/026 ,  H01S5/02325

CPC classification number: H01S5/0262 ,  H01S5/02325

Abstract: An optical semiconductor device comprises a semiconductor laser mounted on a bottom portion of a package, a receiving unit that receives a signal light from an outside using local oscillator light output from the laser, and a receiving-unit-mounted substrate on which the receiving unit including a semiconductor light receiving element is mounted. The receiving unit is disposed on a surface on the side opposite to the laser. The light receiving-unit-mounted substrate is a non-transmissive substrate, has a light passing portion through which the local oscillator light output from the laser passes, and covers the bottom portion surrounded by an outer peripheral portion of the package.

公开(公告)号：US20240154385A1

公开(公告)日：2024-05-09

申请号：US18414180

申请日：2024-01-16

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Hirohisa YASUKAWA

IPC: H01S5/026 ,  H01S5/02345

CPC classification number: H01S5/0261 ,  H01S5/02345 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0235

Abstract: In a semiconductor laser drive device, a wiring inductance in electrically connecting a semiconductor laser and a laser driver is reduced. The semiconductor laser drive device includes a substrate, the laser driver, and the semiconductor laser. The laser driver is built in the substrate. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser drive device. Connection wiring electrically connects the laser driver and the semiconductor laser by a wiring inductance of 0.5 nanohenries or less.

公开(公告)号：US11973312B2

公开(公告)日：2024-04-30

申请号：US17607368

申请日：2019-07-02

Applicant: Mitsubishi Electric Corporation

Inventor： Naoki Kosaka ,  Ayumi Fuchida ,  Masaaki Shimada ,  Go Sakaino ,  Tadashi Takase

IPC: H04B10/00 ,  H01S5/0232 ,  H01S5/026

CPC classification number: H01S5/0232 ,  H01S5/0262

Abstract: A semiconductor laser device comprises a stem serving as a base; a laser diode LD submount having surface electrodes arranged thereon and joined to the surface of the stem; an LD chip joined to the surface electrode and connected with the surface electrode; and leads fixed in through holes formed in the stem by means of sealing parts and electrically connected to the surface electrodes via embedded layers in via holes formed in the LD submount, wherein grooves are formed in portions of the sealing parts or in portions of the LD submount around the connections between the leads and the embedded layers, to obtain a good modulated light waveform.

公开(公告)号：US11719633B2

公开(公告)日：2023-08-08

申请号：US17407257

申请日：2021-08-20

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chui Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  R. Joseph Weiblen ,  Mijin Kim

IPC: G01N21/59 ,  H01S5/028 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/02 ,  H01S5/026 ,  G02B6/10 ,  G01N21/27 ,  G01N21/25 ,  G01J3/18 ,  G01J3/28 ,  H01S5/22 ,  H01S5/06 ,  H01S5/062

CPC classification number: G01N21/59 ,  G01J3/1895 ,  G01J3/2803 ,  G01N21/255 ,  G01N21/27 ,  G02B6/102 ,  H01S5/0215 ,  H01S5/0262 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/101 ,  H01S5/125 ,  H01S5/2063 ,  H01S5/2206 ,  H01S5/3402 ,  H01S5/343 ,  G01N2201/0612 ,  H01S5/062 ,  H01S5/0612

Abstract: Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

公开(公告)号：US11709135B2

公开(公告)日：2023-07-25

申请号：US17407261

申请日：2021-08-20

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chui Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  R. Joseph Weiblen ,  Mijin Kim

IPC: G01N21/59 ,  H01S5/028 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/02 ,  H01S5/026 ,  G02B6/10 ,  G01N21/27 ,  G01N21/25 ,  G01J3/18 ,  G01J3/28 ,  H01S5/22 ,  H01S5/06 ,  H01S5/062

CPC classification number: G01N21/59 ,  G01J3/1895 ,  G01J3/2803 ,  G01N21/255 ,  G01N21/27 ,  G02B6/102 ,  H01S5/0215 ,  H01S5/0262 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/101 ,  H01S5/125 ,  H01S5/2063 ,  H01S5/2206 ,  H01S5/3402 ,  H01S5/343 ,  G01N2201/0612 ,  H01S5/062 ,  H01S5/0612

Abstract: Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

公开(公告)号：US20180301875A1

公开(公告)日：2018-10-18

申请号：US15951824

申请日：2018-04-12

Applicant: Sense Photonics, Inc.

Inventor： Scott Burroughs ,  Brent Fisher ,  James Carter

IPC: H01S5/42 ,  H01S5/40 ,  H01S5/062 ,  H01S5/183 ,  G02B26/10

CPC classification number: H01S5/18397 ,  F21V5/041 ,  F21V5/045 ,  G01J1/44 ,  G01J2001/448 ,  G01S7/4815 ,  G01S17/02 ,  G01S17/89 ,  G02B3/0006 ,  G02B5/0883 ,  G02B26/10 ,  H01L25/50 ,  H01L31/167 ,  H01L31/18 ,  H01S3/025 ,  H01S5/0028 ,  H01S5/0071 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02288 ,  H01S5/02292 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/062 ,  H01S5/12 ,  H01S5/183 ,  H01S5/18394 ,  H01S5/30 ,  H01S5/40 ,  H01S5/4025 ,  H01S5/4037 ,  H01S5/4075 ,  H01S5/423

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

公开(公告)号：US20180190693A1

公开(公告)日：2018-07-05

申请号：US15906316

申请日：2018-02-27

Applicant: International Business Machines Corporation

Inventor： Mattias B. Borg ,  Lukas Czornomaz ,  Veeresh V. Deshpande ,  Vladimir Djara ,  Heike E. Riel ,  Heinz Schmid

IPC: H01L27/146 ,  H01S5/40 ,  H01S5/30 ,  H01S5/026 ,  H01S5/02 ,  H01L31/0304 ,  H01L27/148 ,  H01L31/12

CPC classification number: H01L27/1469 ,  H01L27/14636 ,  H01L27/1465 ,  H01L27/14694 ,  H01L27/14881 ,  H01L31/03046 ,  H01L31/12 ,  H01S5/021 ,  H01S5/0262 ,  H01S5/3013 ,  H01S5/4025

Abstract: A method of fabrication of an array of optoelectronic structures includes first providing a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells includes an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions.

公开(公告)号：US09864135B2

公开(公告)日：2018-01-09

申请号：US15153093

申请日：2016-05-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Cheng-Wei Cheng ,  Ning Li ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC: G02B6/12 ,  H01S5/02 ,  H01L31/0296 ,  H01L31/18 ,  G02B6/122 ,  H01S5/026 ,  H01S5/343 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/16 ,  H01L27/108 ,  H01L27/11517 ,  H01L27/11563 ,  H01L29/73 ,  H01L29/772 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872

CPC classification number: G02B6/12004 ,  G02B6/1228 ,  H01L27/108 ,  H01L27/11517 ,  H01L27/11563 ,  H01L27/1443 ,  H01L29/73 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/808 ,  H01L29/872 ,  H01L31/02325 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/16 ,  H01L31/1852 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/343

Abstract: An electrical device that in one embodiment includes a first semiconductor device positioned on a first portion of a type IV semiconductor substrate, and an optoelectronic light emission device of type III-V semiconductor materials that is in electrical communication with the first semiconductor device. The optoelectronic light emission device is positioned adjacent to the first semiconductor device on the first portion of the type IV semiconductor substrate. A dielectric waveguide is present on a second portion of the type IV semiconductor substrate. An optoelectronic light detection device of type III-V semiconductor material is present on a third portion of the type IV semiconductor device. The dielectric waveguide is positioned between and aligned with the optoelectronic light detection device and optoelectronic light emission device to transmit a light signal from the optoelectronic light emission device to the optoelectronic light detection device.