公开(公告)号：US07482757B2

公开(公告)日：2009-01-27

申请号：US10472553

申请日：2002-03-25

Applicant: Bill H. Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric J. Strang

Inventor： Bill H. Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric J. Strang

IPC: H01J7/24

CPC classification number: H01J37/321 ,  H01J37/32357 ,  H01J37/3266

Abstract: A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.

Abstract translation: 公开了一种高密度等离子体源（100）。 源包括环形绝缘体（300），其内部形成有环形空腔（316）。 用作天线的电感线圈（340）布置在环形空腔内，并且可操作以在等离子体管道（60）内部区域（72）内产生第一磁场，并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体（400）围绕环形绝缘体。 静电屏蔽（360）被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上，下磁环（422和424）优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通，并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件，该工件位于与至少一个源连通的等离子体室中。

公开(公告)号：US20050099133A1

公开(公告)日：2005-05-12

申请号：US10472553

申请日：2002-03-25

Applicant: Bill Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric Strang

Inventor： Bill Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric Strang

IPC: H05H1/46 ,  B01D53/70 ,  B01J19/08 ,  H01J7/24 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32357 ,  H01J37/3266

Abstract: A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.

Abstract translation: 公开了一种高密度等离子体源（100）。 源包括环形绝缘体（300），其内部形成有环形空腔（316）。 用作天线的电感线圈（340）布置在环形空腔内，并且可操作以在等离子体管道（60）内部区域（72）内产生第一磁场，并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体（400）围绕环形绝缘体。 静电屏蔽（360）被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上，下磁环（422和424）优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通，并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件，该工件位于与至少一个源连通的等离子体室中。