公开(公告)号：US07385209B2

公开(公告)日：2008-06-10

申请号：US11256213

申请日：2005-10-24

Applicant: Samuel Jaccard ,  Serguei Mikhailov ,  Frans Munnik

Inventor： Samuel Jaccard ,  Serguei Mikhailov ,  Frans Munnik

IPC: G01N23/00 ,  G21K7/00

CPC classification number: B81C1/00492 ,  B81C2201/032 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/201 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31755 ,  H01J2237/31774 ,  H01J2237/31796 ,  Y10S430/143

Abstract: Ion beam lithography technique wherein a higher amount of radiation energy is deposited to predetermined regions in the bulk if a suitable substrate. By selecting the radiation nature, its energy and the irradiation parameters a structure can be created in the bulk of the material leaving the surface essentially untouched.

Abstract translation: 离子束光刻技术，其中如果合适的衬底，较高量的辐射能量沉积到本体中的预定区域。 通过选择辐射性质，其能量和照射参数，可以在离开表面基本上不变的材料的主体中产生结构。

公开(公告)号：US20060214105A1

公开(公告)日：2006-09-28

申请号：US11256213

申请日：2005-10-24

Applicant: Samuel Jaccard ,  Serguei Mikhailov ,  Frans Munnik

Inventor： Samuel Jaccard ,  Serguei Mikhailov ,  Frans Munnik

IPC: G01N23/00 ,  G21K7/00

CPC classification number: B81C1/00492 ,  B81C2201/032 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/201 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31755 ,  H01J2237/31774 ,  H01J2237/31796 ,  Y10S430/143

Abstract: Ion beam lithography technique wherein a higher amount of radiation energy is deposited to predetermined regions in the bulk if a suitable substrate. By selecting the radiation nature, its energy and the irradiation parameters a structure can be created in the bulk of the material leaving the surface essentially untouched.

Abstract translation: 离子束光刻技术，其中如果合适的衬底，较高量的辐射能量沉积到本体中的预定区域。 通过选择辐射性质，其能量和照射参数，可以在离开表面基本上不变的材料的主体中产生结构。