公开(公告)号：US09899187B2

公开(公告)日：2018-02-20

申请号：US15082063

申请日：2016-03-28

申请人： NuFlare Technology, Inc.

发明人： Yasuo Kato ,  Masafumi Ise ,  Ryoh Kawana

IPC分类号： H01J37/302

CPC分类号： H01J37/3026 ,  H01J2237/30455 ,  H01J2237/31769 ,  H01J2237/31796

摘要： A charged particle beam writing apparatus includes a processing circuitry configured to calculate a third proximity effect correction irradiation coefficient where at least one correction irradiation coefficient term up to k-th order term, in correction irradiation coefficient terms of from a first order term to a n-th order term for a first proximity effect correction irradiation coefficient which does not take account of a predetermined effect, are replaced by at least one correction irradiation coefficient term up to the k-th order term, for a second proximity effect correction irradiation coefficient which takes account of the predetermined effect; and a processing circuitry configured to calculate a dose by using the third proximity effect correction irradiation coefficient.

公开(公告)号：US20150036914A1

公开(公告)日：2015-02-05

申请号：US14239803

申请日：2012-05-24

申请人： Tomoko Sekiguchi ,  Takeyoshi Ohashi ,  Junichi Tanaka ,  Zhaohui Cheng ,  Ruriko Tsuneta ,  Hiroki Kawada ,  Seiko Hitomi

发明人： Tomoko Sekiguchi ,  Takeyoshi Ohashi ,  Junichi Tanaka ,  Zhaohui Cheng ,  Ruriko Tsuneta ,  Hiroki Kawada ,  Seiko Hitomi

IPC分类号： G06K9/46 ,  G06T7/00

CPC分类号： G06K9/4604 ,  B82Y10/00 ,  B82Y40/00 ,  G01B15/04 ,  G01N23/22 ,  G06T7/0004 ,  H01J37/3174 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/2816 ,  H01J2237/31754 ,  H01J2237/31796 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).

摘要翻译： 在本发明中，在测量时，使用CD-SEM，当用电子束照射时收缩的抗蚀剂的长度为了在收缩之前高精度地估计抗蚀剂的形状和尺寸，收缩数据库 预先准备了各种图案，所述收缩数据库包含在电子束照射之前获得的横截面形状数据，横截面形状数据组和CD-SEM图像数据组，其在各种电子束照射条件下获得 ，以及基于这样的数据和数据组的模型，并且获得要测量的抗蚀剂图案的CD-SEM图像（S102），然后将CD-SEM图像和收缩数据库中的数据彼此进行比较（S103 ），并且估计并输出收缩前的图案的形状和尺寸（S104）。

公开(公告)号：US08502175B2

公开(公告)日：2013-08-06

申请号：US13170426

申请日：2011-06-28

申请人： Noriaki Nakayamada ,  Seiji Wake ,  Hideo Inoue ,  Akihito Anpo

发明人： Noriaki Nakayamada ,  Seiji Wake ,  Hideo Inoue ,  Akihito Anpo

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/304 ,  H01J2237/30461 ,  H01J2237/31766 ,  H01J2237/31776 ,  H01J2237/31796

摘要： A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam.

摘要翻译： 一种带电粒子束图案形成装置，包括：电荷量分布计算单元，被配置为计算通过在目标对象的图案形成区域上的带电粒子束垂直入射而充电的电荷量分布; 位置校正单元，被配置为使用所充电的所述充电量分配来计算校正的每个图案形成位置的校正位置，所述校正位置对于包括根据所述带电粒子束偏转的偏转位置的包括不对准量的不对准量，由 一笔费用; 以及图案生成器，被配置为通过使用带电粒子束在校正位置形成图案。

公开(公告)号：US20130177855A1

公开(公告)日：2013-07-11

申请号：US13737707

申请日：2013-01-09

申请人： NuFlare Technology, Inc.

发明人： Sumito NAKADA ,  Osamu IIZUKA ,  Hikaru YAMAMURA

IPC分类号： G21K5/10

CPC分类号： G21K5/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30455 ,  H01J2237/31761 ,  H01J2237/31776 ,  H01J2237/31796

摘要： A charged-particle beam drawing method includes: storing a plurality of time interval patterns defining time intervals for performing a diagnosis of a drift amount of charged-particle beam; drawing a predetermined drawing pattern on a sample by irradiating the beam on the sample; receiving first event information including occurrence of event and type of event; acquiring region information specifying a region being drawn by the beam; selecting a specific time interval pattern from the plurality of time interval patterns based on the type of the event of the first event information and the region information; diagnosing the drift amount of the beam based on the specific time interval pattern, until second event information is received, the second event information includes occurrence of event and type of event; and drawing a predetermined drawing pattern on the sample while performing a drift correction of the charged-particle beam, based on the diagnosing.

摘要翻译： 带电粒子束描绘方法包括：存储多个时间间隔图案，其限定用于执行带电粒子束漂移量的诊断的时间间隔; 通过将光束照射在样品上，在样品上绘制预定的图形; 接收包括事件发生和事件类型的第一事件信息; 获取指定由所述光束绘制的区域的区域信息; 基于所述第一事件信息和所述区域信息的事件的类型，从所述多个时间间隔模式中选择特定时间间隔模式; 基于所述特定时间间隔模式来诊断所述波束的漂移量，直到接收到第二事件信息，所述第二事件信息包括事件的发生和事件的类型; 并且基于诊断，在进行带电粒子束的漂移校正的同时，在样本上绘制预定的绘图图案。

公开(公告)号：US20110031387A1

公开(公告)日：2011-02-10

申请号：US12843367

申请日：2010-07-26

申请人： Noriaki NAKAYAMADA ,  Seiji Wake

发明人： Noriaki NAKAYAMADA ,  Seiji Wake

IPC分类号： H01J37/304

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J2237/31776 ,  H01J2237/31796

摘要： A charged particle beam writing apparatus includes a charge amount distribution calculation unit configured to calculate a charge amount distribution which is charged by irradiation of a charged particle beam onto a writing region of a target workpiece, by using a charge decay amount and a charge decay time constant both of which depend on a pattern area density, a position displacement amount distribution calculation unit configured to calculate a position displacement amount of each writing position due to charge amounts of the charge amount distribution by performing convolution of each charge amount of the charge amount distribution with a response function, and a writing unit configured to write a pattern on the each writing position where the position displacement amount has been corrected, using a charged particle beam.

摘要翻译： 带电粒子束写入装置包括：电荷量分布计算单元，被配置为通过使用电荷衰减量和电荷衰减时间来计算通过将带电粒子束照射到目标工件的写入区域而被充电的电荷量分布 两者都取决于图案区域密度的位置位移量分布计算单元，被配置为通过执行电荷量分布的每个电荷量的卷积来计算由于电荷量分布的电荷量引起的每个写入位置的位置位移量 具有响应功能，以及写入单元，被配置为使用带电粒子束在已经校正位置偏移量的每个写入位置上写入图案。

公开(公告)号：US07345436B2

公开(公告)日：2008-03-18

申请号：US10552296

申请日：2004-03-29

申请人： Josef Sellmair

发明人： Josef Sellmair

IPC分类号： H01J3/14 ,  H01J3/02 ,  H01J49/08

CPC分类号： H01J37/243 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/06341 ,  H01J2237/31774 ,  H01J2237/31796

摘要： An apparatus for producing a beam of charged particles is provided, which comprises an emitter (1, 2) and a switching device (3) adapted to switch between first, second and third beam current levels, wherein the beam current at said first current level is suitable for writing a pixel of an image on the surface of a sample, the beam current at said second current level is suitable for not writing a pixel on the surface of said sample, and the beam current at said third current level is lower than the beam current at the second current level. Furthermore, a method of controlling the beam current of a charged particle beam is provided, comprising the steps of switching the beam current of said charged particle beam between first and second current levels, wherein the beam current at said first current level is suitable for writing a pixel of an image on the surface of a sample and the beam current at said second current level is suitable for not writing a pixel on the surface of said sample, and switching the beam current to a third voltage level, wherein the beam current at said third current level is lower than the beam current at the second current level.

摘要翻译： 提供一种用于产生带电粒子束的装置，其包括适于在第一，第二和第三束电流水平之间切换的发射极（1,2）和开关装置（3），其中所述第一电流电平 适合于在样品的表面上写入图像的像素，所述第二电流水平的束电流适于不在所述样品的表面上写入像素，并且所述第三电流水平的束电流低于 在第二电流电平的光束电流。 此外，提供了一种控制带电粒子束的束流的方法，包括以下步骤：将所述带电粒子束的束电流切换在第一和第二电流水平之间，其中所述第一电流水平的束电流适于写入 在样品表面上的图像的像素和在所述第二电流电平处的束电流适合于不在所述样品的表面上写入像素，并且将束电流切换到第三电压电平，其中， 所述第三电流水平低于在第二电流水平的束电流。

公开(公告)号：US20020030801A1

公开(公告)日：2002-03-14

申请号：US09921921

申请日：2001-08-06

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： H01L021/66 ,  G01R031/26

CPC分类号： G01N23/2251 ,  H01J2237/31796

摘要： An electron beam aligner includes a substrate holder provided within a chamber for holding a semiconductor substrate on a surface of which a resist film is formed; and an electron beam source for fully irradiating the resist film with an electron beam. The chamber is provided with a gas collection member for collecting an outgassing released from the resist film when irradiated with the electron beam.

摘要翻译： 电子束对准器包括设置在室内的衬底保持器，用于在形成有抗蚀剂膜的表面上保持半导体衬底; 以及用电子束完全照射抗蚀剂膜的电子束源。 该室设置有用于收集当用电子束照射时从抗蚀剂膜释放的除气的气体收集构件。

公开(公告)号：US4576884A

公开(公告)日：1986-03-18

申请号：US620510

申请日：1984-06-14

申请人： Arnold Reisman

发明人： Arnold Reisman

IPC分类号： G03C5/08 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  G03C5/00 ,  G21K5/04

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/3174 ,  H01J2237/31796 ,  Y10S430/143

摘要： A method and apparatus are disclosed for exposing photoresist using an incident electron beam during the fabrication of a semiconductor device. The method includes the steps of coating the substrate with a photoresist that is exposed in response to an electron beam. An electron beam is projected onto the photoresist and deflected to trace a pattern. The voltage and the amount of charge of the electron beam are controlled as it is deflected so that the energy incident upon the coated photoresist is correlated to variations in the photoresist thickness to expose the photoresist with minimal penetration therethrough to underlying structures.

摘要翻译： 公开了一种用于在制造半导体器件期间使用入射电子束曝光光致抗蚀剂的方法和装置。 该方法包括以下步骤：用响应于电子束而暴露的光致抗蚀剂涂覆基底。 电子束投影到光致抗蚀剂上并偏转以追踪图案。 电子束的电压和电荷量被控制，因为它被偏转，使得入射到涂覆的光致抗蚀剂上的能量与光致抗蚀剂厚度的变化相关，以使得光致抗蚀剂以最小的穿透穿透到下面的结构。

公开(公告)号：US20170075234A1

公开(公告)日：2017-03-16

申请号：US15362811

申请日：2016-11-28

申请人： BEIJING UNIVERSITY OF TECHNOLOGY

发明人： Manling Sui ,  Yue Lu ,  Furong Chen

IPC分类号： G03F7/20

CPC分类号： G03F7/2059 ,  G03F7/20 ,  G03F7/70858 ,  H01J2237/31796 ,  H01L21/31111

摘要： A method for nanometre etching or printing using an electron beam in a humid environment, which belongs to the field of electronic exposure. The method comprises: first, attaching a solution, humid atmosphere or humid environment curing layer to the surface of a substrate required to be etched and printed; then placing same in an electron beam exposure device to conduct electron beam exposure, so that a required nanometre micromachining pattern can be etched and printed on the substrate. The humid environment solution used in the method is mostly deionized water, solution containing metal ions, complex or other environment-friendly solutions. In this method, a nanoscale micromachining finished product can be obtained after electron beam exposure without chemical components such as photoresist, etc. required in the traditional electron beam etching or printing process and complicated machining processes such as fixation, rinsing, etching, gold-plating, etc. Moreover, the electron beam exposure rate is fast, the line width of electron beam photoetching or printing is uniform, and the size of the line width is the same as that of the electron beam. Therefore, the production efficiency can be greatly increased, thereby reducing nanoscale micromachining production costs.

摘要翻译： 一种在潮湿环境下使用电子束进行纳米蚀刻或印刷的方法，属于电子曝光领域。 该方法包括：首先将溶液，潮湿环境或潮湿环境固化层附着到需要蚀刻和印刷的基材表面; 然后将其放置在电子束曝光装置中以进行电子束曝光，使得所需的纳米微加工图案可以被蚀刻并印刷在基板上。 该方法中使用的潮湿环境溶液主要是去离子水，含有金属离子的溶液，复杂的或其他环境友好的溶液。 在这种方法中，在传统的电子束蚀刻或印刷过程所需的电子束曝光后，不需要化学成分如光致抗蚀剂等，可以获得纳米尺寸的微加工成品，并且复杂的加工工艺如固定，漂洗，蚀刻，镀金 此外，电子束曝光速度快，电子束光刻或印刷的线宽均匀，线宽的尺寸与电子束的尺寸相同。 因此，可大大提高生产效率，从而降低纳米级微加工生产成本。

公开(公告)号：US09583310B2

公开(公告)日：2017-02-28

申请号：US14879518

申请日：2015-10-09

申请人： NuFlare Technology, Inc.

发明人： Tomoo Motosugi

IPC分类号： A61N5/00 ,  H01J37/317 ,  H01J37/304

CPC分类号： H01J37/3174 ,  H01J37/3045 ,  H01J2237/30433 ,  H01J2237/30455 ,  H01J2237/31776 ,  H01J2237/31796

摘要： In a charged particle beam writing apparatus, a charged particle optical system includes a first, second, and third deflection control system configured to form a shot of a charged particle beam, control a shape and size of the shot, and control an irradiation position of the shot respectively. A shot data generation processing device generates shot data of writing a latent image on a resist layer in a sample, using (1) design data of a pattern to be formed in a member, wherein the member is formed in a sample, and the resist layer is formed on the member, and (2) correction information of a shot size and an irradiation shot position obtained from in-plane distribution data of an XY dimension variation amount of dimension measurement patterns. The dimension measurement patterns are formed by writing test patterns on a resist layer and transferring the test patterns onto a member.

摘要翻译： 在带电粒子束写入装置中，带电粒子光学系统包括：第一，第二和第三偏转控制系统，被配置为形成带电粒子束的镜头，控制镜头的形状和尺寸，并且控制照射位置 拍摄分别。 拍摄数据生成处理装置使用（1）在构件中形成的图案的设计数据来生成在样品中的抗蚀剂层上写入潜像的拍摄数据，其中，所述构件形成在样品中，并且抗蚀剂 层形成在构件上，（2）从尺寸测量图案的XY尺寸变化量的平面内分布数据获得的拍摄尺寸和照射拍摄位置的校正信息。 尺寸测量图案通过在抗蚀剂层上书写测试图案并将测试图案转移到构件上而形成。