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    Manufacturing method for membrane lithography mask with mask fields
    3.
    发明授权
    Manufacturing method for membrane lithography mask with mask fields 失效
    具有掩模场的膜光刻掩模的制造方法

    公开(公告)号：US5935739A

    公开(公告)日：1999-08-10

    申请号：US40100

    申请日：1998-03-17

    Applicant: Thomas Bayer ,  Johann Greschner ,  Samuel Kalt ,  Klaus Meissner ,  Hans Pfeiffer

    Inventor： Thomas Bayer ,  Johann Greschner ,  Samuel Kalt ,  Klaus Meissner ,  Hans Pfeiffer

    IPC: G03F1/20 ,  G03F1/22 ,  H01L21/027 ,  H01L21/306 ,  G03F9/00

    CPC classification number: G03F1/20 ,  G03F1/22 ,  H01L21/30604

    Abstract: The invention relates to a manufacturing method for a membrane mask suitable for particle beams with mask fields, which are bounded by thin support walls.The deep plasma etching for the formation of the support walls is halted shortly before reaching the membrane and the last .mu.m before the membrane removed by wet-chemical etching. A high etch selectivity can be achieved using an alkaline etching solution.The support walls 1 are turned by 45.degree. to the (110) direction or oriented parallel to the (100) plane, so that the structures restricted by (111) planes are avoided.

    Abstract translation: 本发明涉及一种适用于具有掩膜场的粒子束的薄膜掩模的制造方法，其具有薄的支撑壁。 用于形成支撑壁的深等离子体蚀刻在到达膜之前不久就停止，并且在通过湿化学蚀刻除去膜之前最后一个微米。 使用碱性蚀刻溶液可以实现高蚀刻选择性。 支撑壁1向（110）方向转动45°或平行于（100）平面定向，从而避免了由（111）面限制的结构。

    Membrane mask for electron beam lithography
    4.
    发明授权
    Membrane mask for electron beam lithography 失效
    电子束光刻膜罩

    公开(公告)号：US6004700A

    公开(公告)日：1999-12-21

    申请号：US40099

    申请日：1998-03-17

    Applicant: Johann Greschner ,  Samuel Kalt ,  Klaus Meissner ,  Rudolf Paul

    Inventor： Johann Greschner ,  Samuel Kalt ,  Klaus Meissner ,  Rudolf Paul

    IPC: G03F1/20 ,  H01L21/027 ,  G03F9/00

    CPC classification number: G03F1/20

    Abstract: Membrane masks for electron-beam lithography are described which have a high mechanical stability and low membrane thickness, are free of stress and the submicron structures of which are easy to produce using reactive ion etching methods without rounding effects.In the case of a membrane mask for structuring surface areas with the aid of electron or corpuscular beams, a layer 1 of silicon nitride with going right through openings, which define the mask pattern, is deposited on one surface of a semiconductor wafer 2, which consists preferably of silicon. A tub-shaped recess 3 extends from the other surface of the semiconductor wafer 2 as far as the layer-carrying surface.A further mask for structuring surface areas with the aid of electron beams has at least one continuous layer 30 and a layer 31 defining the mask pattern.These two layers are deposited on the surface of a semiconductor wafer 32 with a tub-shaped recess 33.The anisotropic plasma etching method according to the invention makes it possible to transfer lithographically produced patterns to the membrane without the edge rounding which is otherwise usual.

    Abstract translation: 描述了用于电子束光刻的膜掩模，其具有高机械稳定性和低膜厚度，没有应力，并且其亚微米结构易于使用没有圆整效应的反应离子蚀刻方法产生。 在用于借助于电子或微粒束结构化表面区域的膜掩模的情况下，在半导体晶片2的一个表面上沉积限定掩模图案的直通通孔的氮化硅层1， 优选由硅组成。 桶形凹部3从半导体晶片2的另一个表面延伸到层承载表面。 借助于电子束来构造表面区域的另一个掩模具有至少一个连续层30和限定掩模图案的层31。 这两层沉积在具有桶状凹部33的半导体晶片32的表面上。根据本发明的各向异性等离子体蚀刻方法使得可以将光刻产生的图案转印到膜上而不进行通常的边缘倒圆。

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