公开(公告)号：US5496416A

公开(公告)日：1996-03-05

申请号：US286673

申请日：1994-08-05

申请人： Robert B. Hall ,  Allen M. Barnett ,  Sandra R. Collins ,  Joseph C. Checchi ,  David H. Ford ,  Christopher L. Kendall ,  Steven M. Lampo ,  James A. Rand

发明人： Robert B. Hall ,  Allen M. Barnett ,  Sandra R. Collins ,  Joseph C. Checchi ,  David H. Ford ,  Christopher L. Kendall ,  Steven M. Lampo ,  James A. Rand

IPC分类号： H01L31/04 ,  H01L21/36 ,  H01L31/036 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0392

CPC分类号： H01L31/1864 ,  H01L31/036 ,  H01L31/03682 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S148/122 ,  Y10T428/12528

摘要： The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.

公开(公告)号：US6111191A

公开(公告)日：2000-08-29

申请号：US33155

申请日：1998-03-02

申请人： Robert B. Hall ,  Allen M. Barnett ,  Sandra R. Collins ,  Joseph C. Checchi ,  David H. Ford ,  Christopher L. Kendall ,  James A Rand ,  Chad B. Moore

发明人： Robert B. Hall ,  Allen M. Barnett ,  Sandra R. Collins ,  Joseph C. Checchi ,  David H. Ford ,  Christopher L. Kendall ,  James A Rand ,  Chad B. Moore

IPC分类号： C01B33/02 ,  C30B29/06 ,  H01L21/20 ,  H01L31/04 ,  H01L31/18 ,  H01L25/00

CPC分类号： H01L31/1872 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S148/122 ,  Y10T428/12528

摘要： The invention relates to improved techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made from silicon on a setter material which supports the silicon material. The setter material and silicon are subjected to a thermal profile all of which promote columnar growth. The thermal profile sequentially creates a melt region where a thin-film capping layer grows at the top of the silicon, a nucleation region where preferential nucleation occurs at the capping-layer/molten-silicon interface, and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.

摘要翻译： 本发明涉及用于制造具有特殊用途的圆柱状多晶片的改进技术，作为太阳能电池的基片或晶片。 片材由支撑硅材料的固化剂材料上的硅制成。 固化剂材料和硅经受热分布，所有这些都促进柱状生长。 热分布顺序地产生熔融区域，其中薄膜覆盖层在硅的顶部生长，在覆盖层/熔融 - 硅界面处发生优先成核的成核区域，然后是生长区域，其中液体和 越来越多晶片层共存。 产生退火区域，其中生长的多晶硅片层的温度被可控地减小以实现应力消除。

公开(公告)号：USRE36156E

公开(公告)日：1999-03-23

申请号：US788660

申请日：1997-01-24

申请人： Robert B. Hall ,  Allen M. Barnett ,  Sandra R. Collins ,  Joseph C. Checchi ,  David H. Ford ,  Christopher L. Kendall ,  Steven M. Lampo ,  James A. Rand

发明人： Robert B. Hall ,  Allen M. Barnett ,  Sandra R. Collins ,  Joseph C. Checchi ,  David H. Ford ,  Christopher L. Kendall ,  Steven M. Lampo ,  James A. Rand

IPC分类号： H01L31/036 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0392

CPC分类号： H01L31/03682 ,  H01L31/036 ,  H01L31/182 ,  H01L31/1864 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T428/12528

摘要： The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.

摘要翻译： 本发明涉及用于制造具有特殊用途的圆柱状多晶片的技术，作为太阳能电池的基片或晶片。 片材通过将颗粒状硅施加到支撑颗粒材料的固化剂材料而制成。 固化剂材料和颗粒状硅经受热分布，所有这些都通过从顶部向下熔化硅来促进柱状生长。 热分布顺序地在颗粒状硅的顶部产生熔融区域，然后在液体和生长的多晶片层共存的生长区域上产生。 产生退火区域，其中生长的多晶硅片层的温度被可控地减小以实现应力消除。