公开(公告)号：US20240250189A1

公开(公告)日：2024-07-25

申请号：US18625057

申请日：2024-04-02

Applicant: Maxeon Solar Pte. Ltd.

Inventor： PEI HSUAN LU ,  BENJAMIN I. HSIA ,  DAVID AARON R. BARKHOUSE ,  LEE GORNY

IPC: H01L31/02 ,  H01L31/0368 ,  H01L31/18

CPC classification number: H01L31/02008 ,  H01L31/03682 ,  H01L31/1804 ,  H01L31/186

Abstract: Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

公开(公告)号：US20240186439A1

公开(公告)日：2024-06-06

申请号：US18553369

申请日：2022-05-30

Applicant: TONGWEI SOLAR (MEISHAN) CO., LTD.

Inventor： Mingzhang DENG ,  Wenzhou XU ,  Yu HE ,  Hao CHEN ,  Fan ZHOU ,  Xiajie MENG ,  Pengyu ZHOU ,  Qian YAO ,  Guoqiang XING

IPC: H01L31/068 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0288 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

CPC classification number: H01L31/0682 ,  H01L31/0201 ,  H01L31/02168 ,  H01L31/022458 ,  H01L31/0288 ,  H01L31/03682 ,  H01L31/077 ,  H01L31/182

Abstract: In a solar cell, the back surface of a substrate thereof is provided with alternately distributed emitter zones and back surface field zones. An emitter is formed in each emitter zone, and the emitters are made of boron-doped monocrystalline silicon. A back surface field is formed in each back surface field zone; the back surface fields comprise tunneling oxide layers and polycrystalline silicon layers in stacked distribution, the polycrystalline silicon layers being made of phosphorus-doped polycrystalline silicon, and the tunneling oxide layers being located between a polycrystalline silicon layer and a polycrystalline silicon layer. Positive electrodes are electrically connected to the emitters, and negative electrodes are electrically connected to the back surface fields. In the described solar cell, the light-receiving area of the front surface can be expanded and the recombination rate of electron-hole pairs can be reduced, thereby effectively improving the photoelectric conversion efficiency of the solar cell.

公开(公告)号：US20240145604A1

公开(公告)日：2024-05-02

申请号：US18411020

申请日：2024-01-12

Applicant: Maxeon Solar Pte. Ltd.

Inventor： Matthieu Reich ,  SEUNG BUM RIM

IPC: H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/0682 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/50

Abstract: Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, forming a first semiconductor region and a second semiconductor region on the back side of a substrate. A first conductive busbar can be formed above the first semiconductor region. A first portion of a second conductive busbar can be formed above the second semiconductor region. A second portion of the second conductive busbar can be formed above the second semiconductor region, where a separation region separates the second portion and the first portion of the second conductive busbar. A third conductive busbar can be formed above the first semiconductor region. A first conductive bridge can be formed above the separation region, where the first conductive bridge electrically connects the first conductive busbar to the third conductive busbar.

公开(公告)号：US20240105870A1

公开(公告)日：2024-03-28

申请号：US18371606

申请日：2023-09-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Hiroyasu FUJIWARA ,  Wei DONG

IPC: H01L31/0368 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/03682 ,  H01L31/022416 ,  H01L31/109 ,  H01L31/1812

Abstract: A photodetection element includes an N-type silicon layer formed in a single crystal state, a P-type germanium-containing layer formed in a polycrystal state and forming a hetero PN junction between the germanium-containing layer and the silicon layer, a first electrode electrically connected to the silicon layer, and a second electrode electrically connected to the germanium-containing layer.

公开(公告)号：US20230420582A1

公开(公告)日：2023-12-28

申请号：US18244073

申请日：2023-09-08

Applicant: Maxeon Solar Pte. Ltd.

Inventor： Seung Bum Rim

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0368

CPC classification number: H01L31/022425 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/1804 ,  H01L31/02168 ,  H01L31/03682

Abstract: Methods of fabricating conductive contacts for polycrystalline silicon features of solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes providing a substrate having a polycrystalline silicon feature. The method also includes forming a conductive paste directly on the polycrystalline silicon feature. The method also includes firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature. The method also includes, subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact. The method also includes forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact.

公开(公告)号：US20190198701A1

公开(公告)日：2019-06-27

申请号：US16325369

申请日：2017-09-11

Applicant: Commissariat a I'Énergie Atomique et aux Énergies Alternatives

Inventor： Norbert Moussy

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0368

CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/1075 ,  Y02E10/50

Abstract: A SPAD-type photodiode including: a semiconductor substrate of a first conductive type having a front side and a back side; and a first semiconductor region of the second conductivity type extending in the substrate from the front side thereof and towards the back side thereof, the lateral surfaces of the first region being in contact with the substrate and the junction between the lateral surfaces of the first region and the substrate defining an avalanche area of the photodiode.

公开(公告)号：US20190044015A1

公开(公告)日：2019-02-07

申请号：US16156483

申请日：2018-10-10

Applicant: SunPower Corporation

Inventor： David D. SMITH

IPC: H01L31/068 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0745 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368

CPC classification number: H01L31/0682 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

公开(公告)号：US20180190837A1

公开(公告)日：2018-07-05

申请号：US15396246

申请日：2016-12-30

Applicant: SUNPOWER CORPORATION

Inventor： Matthieu Minault Reich ,  Seung Bum Rim

IPC: H01L31/02 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0236

CPC classification number: H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/0682 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, forming a first semiconductor region and a second semiconductor region on the back side of a substrate. A first conductive busbar can be formed above the first semiconductor region. A first portion of a second conductive busbar can be formed above the second semiconductor region. A second portion of the second conductive busbar can be formed above the second semiconductor region, where a separation region separates the second portion and the first portion of the second conductive busbar. A third conductive busbar can be formed above the first semiconductor region. A first conductive bridge can be formed above the separation region, where the first conductive bridge electrically connects the first conductive busbar to the third conductive busbar.

公开(公告)号：US20180175232A1

公开(公告)日：2018-06-21

申请号：US15554048

申请日：2017-01-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Yingming LIU ,  Xue DONG ,  Hailin XUE ,  Haisheng WANG ,  Xiaochuan CHEN ,  Xiaoliang DING ,  Shengji YANG ,  Rui XU ,  Changfeng LI ,  Wei LIU ,  Pengpeng WANG

IPC: H01L31/113 ,  H01L29/786 ,  H01L27/146 ,  H01L31/02 ,  H01L31/119 ,  H01L31/0368

CPC classification number: H01L31/1136 ,  H01L27/14612 ,  H01L27/14659 ,  H01L27/15 ,  H01L29/78675 ,  H01L31/02019 ,  H01L31/03682 ,  H01L31/115 ,  H01L31/119

Abstract: The embodiments of the invention provide a photosensitive element, a display panel, a display device, and an X-ray imaging device. The photosensitive element includes a first top gate type thin film transistor as a control switch and a second top gate type thin film transistor serving as a photosensitive unit. The first top gate type thin film transistor is connected to the second top gate type thin film transistor. A gate of the second thin film transistor includes a transparent region corresponding to at least a part of an active layer of the second thin film transistor, thereby achieving a measurement of a light intensity entering the second thin film transistor when the first thin film transistor and the second thin film transistor are turned on simultaneously.

公开(公告)号：US20180166603A1

公开(公告)日：2018-06-14

申请号：US15833795

申请日：2017-12-06

Applicant: Ramesh Kakkad

Inventor： Ramesh Kakkad

IPC: H01L31/18 ,  H01L31/077 ,  H01L31/0288 ,  H01L31/0368

CPC classification number: H01L31/1872 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/03682 ,  H01L31/056 ,  H01L31/07 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/50 ,  Y02P70/521

Abstract: Thin film silicon photovoltaic cell arrangements that include a heavily doped p-type polycrystalline silicon layer spaced-apart from the substrate and bottom electrode in order to reduce grain defects by initiating crystallization at a location far from the substrate. This is accomplished by forming a device structure incorporating such amorphous silicon films on a substrate and annealing at elevated temperature to crystallize the a-Si films such that the crystallization of the a-Si starts within the spaced-apart heavily doped p-type layer and proceeds through the intrinsic silicon layer.