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    Method for producing silicon for solar cells by metallurgical refining process
    4.
    发明授权
    Method for producing silicon for solar cells by metallurgical refining process 有权
    冶金精制工艺生产太阳能电池用硅的方法

    公开(公告)号：US09352970B2

    公开(公告)日：2016-05-31

    申请号：US14380239

    申请日：2012-06-28

    申请人： Byung Moon Moon ,  Tae U Yu ,  Dong Ho Park ,  Hyun Jin Koo ,  Gang June Kim ,  Eun Su Jang ,  Sang Wook Lee

    发明人： Byung Moon Moon ,  Tae U Yu ,  Dong Ho Park ,  Hyun Jin Koo ,  Gang June Kim ,  Eun Su Jang ,  Sang Wook Lee

    IPC分类号： C01B33/039 ,  C01B33/037 ,  C07C29/74 ,  C01B33/025

    CPC分类号： C01B33/039 ,  C01B33/025 ,  C01B33/037 ,  C07C29/74 ,  C07C31/18

    摘要： In order to produce metallurgical grade silicon and solar cell grade polysilicon in batches, a method of the present invention comprises: a step of reduction in an arc furnace, consisting of removing C and CO in a silicon reduction atmosphere using silica stone and carbon black by an arc so as to produce metallurgical grade silicon; a step of refining by slag consisting of removing phosphorus (P) and boron (B) by slag; a step of refining by unidirectional solidification consisting of removing metal impurities (Fe, Al, Ti, Mn, etc.) by means of unidirectional solidification; and a step of steam plasma-electromagnetism continuous refining consisting of charging a furnace with the unidirectionally solidified silicon and removing boron (B) by a steam plasma torch.

    摘要翻译： 为了分批生产冶金级硅和太阳能电池级多晶硅，本发明的方法包括：还原电弧炉的步骤包括使用硅石和炭黑通过硅还原气氛中的C和CO除去 电弧，以生产冶金级硅; 通过炉渣除去磷（P）和硼（B）组成的炉渣精炼的步骤; 通过单向凝固除去金属杂质（Fe，Al，Ti，Mn等）的单向凝固精制步骤; 以及蒸汽等离子体 - 电磁连续精炼的步骤，其包括将炉子与单向固化的硅进行加热，并通过蒸汽等离子体焰炬除去硼（B）。

    Method of manufacturing retarder
    5.
    发明授权
    Method of manufacturing retarder 有权
    制造缓凝剂的方法

    公开(公告)号：US09348077B2

    公开(公告)日：2016-05-24

    申请号：US13287244

    申请日：2011-11-02

    申请人： Su-Bin Lee ,  Su-Hyun Park ,  Sang-Wook Lee ,  Jung-Min Lee ,  Byoung-Har Hwang

    发明人： Su-Bin Lee ,  Su-Hyun Park ,  Sang-Wook Lee ,  Jung-Min Lee ,  Byoung-Har Hwang

    IPC分类号： B29C71/02 ,  G02B5/30 ,  G02B27/26

    CPC分类号： G02B5/3083 ,  G02B27/26

    摘要： A method of manufacturing a patterned retarder includes forming a retarder material layer by applying a retarder material to a substrate; drying the retarder material layer at a first temperature; exposing the retarder material layer to linearly-polarized UV, wherein the retarder material layer has an optical anisotropic property; and heat treating the retarder material layer at a second temperature higher than the first temperature to increase the optical anisotropic property of the retarder material layer.

    摘要翻译： 制造图案化延迟器的方法包括通过将延迟材料施加到基底来形成延迟材料层; 在第一温度下干燥缓凝材料层; 将所述缓凝材料层暴露于线偏振UV，其中所述延迟材料层具有光学各向异性特性; 并且在高于第一温度的第二温度下对延迟材料层进行热处理，以增加延迟材料层的光学各向异性。

    METHOD FOR PRODUCING SILICON FOR SOLAR CELLS BY METALLURGICAL REFINING PROCESS
    6.
    发明申请
    METHOD FOR PRODUCING SILICON FOR SOLAR CELLS BY METALLURGICAL REFINING PROCESS 有权
    通过冶金精炼工艺生产太阳能电池硅的方法

    公开(公告)号：US20150135770A1

    公开(公告)日：2015-05-21

    申请号：US14380239

    申请日：2012-06-28

    申请人： Byung Moon Moon ,  Tae U Yu ,  Dong Ho Park ,  Hyun Jin Koo ,  Gang June Kim ,  Eun Su Jang ,  Sang Wook Lee

    发明人： Byung Moon Moon ,  Tae U Yu ,  Dong Ho Park ,  Hyun Jin Koo ,  Gang June Kim ,  Eun Su Jang ,  Sang Wook Lee

    IPC分类号： C01B33/039

    CPC分类号： C01B33/039 ,  C01B33/025 ,  C01B33/037 ,  C07C29/74 ,  C07C31/18

    摘要： In order to produce metallurgical grade silicon and solar cell grade polysilicon in batches, a method of the present invention comprises: a step of reduction in an arc furnace, consisting of removing C and CO in a silicon reduction atmosphere using silica stone and carbon black by an arc so as to produce metallurgical grade silicon; a step of refining by slag consisting of removing phosphorus (P) and boron (B) by slag; a step of refining by unidirectional solidification consisting of removing metal impurities (Fe, Al, Ti, Mn, etc.) by means of unidirectional solidification; and a step of steam plasma-electromagnetism continuous refining consisting of charging a furnace with the unidirectionally solidified silicon and removing boron (B) by a steam plasma torch.

    摘要翻译： 为了分批生产冶金级硅和太阳能电池级多晶硅，本发明的方法包括：还原电弧炉的步骤包括使用硅石和炭黑通过硅还原气氛中的C和CO除去 电弧，以生产冶金级硅; 通过炉渣除去磷（P）和硼（B）组成的炉渣精炼的步骤; 通过单向凝固除去金属杂质（Fe，Al，Ti，Mn等）的单向凝固精制步骤; 以及蒸汽等离子体 - 电磁连续精炼的步骤，其包括将炉子与单向固化的硅进行加热，并通过蒸汽等离子体焰炬除去硼（B）。

    Blue phase liquid crystal display device
    7.
    发明授权
    Blue phase liquid crystal display device 有权
    蓝相液晶显示装置

    公开(公告)号：US08867008B2

    公开(公告)日：2014-10-21

    申请号：US12958976

    申请日：2010-12-02

    申请人： Sang-Wook Lee ,  Hyun-Jin Park ,  Eun-Jung Lim ,  Dong-Kyu Yoon

    发明人： Sang-Wook Lee ,  Hyun-Jin Park ,  Eun-Jung Lim ,  Dong-Kyu Yoon

    IPC分类号： G02F1/1343 ,  C09K19/02 ,  C09K19/44 ,  C09K19/22

    CPC分类号： C09K19/0275 ,  C09K19/22 ,  C09K19/44

    摘要： A blue phase liquid crystal display device includes a first substrate having a first pixel region, a first gate line on the first substrate, first and second data lines on the first substrate, a first thin film transistor (TFT) and a second TFT disposed in the first pixel region, the first TFT connected to the first gate line and the first data line, and the second TFT connected to the first gate line and the second data line, a first pixel electrode in the first pixel region and connected to the first TFT, and a second pixel electrode in the first pixel region and connected to the second TFT, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates, the liquid crystal layer having an optical isotropic property without an electric field and a birefringence property with the electric field.

    摘要翻译： 蓝相液晶显示装置包括具有第一像素区域的第一基板，第一基板上的第一栅极线，第一基板上的第一和第二数据线，设置在第一基板上的第一薄膜晶体管（TFT）和第二TFT 所述第一像素区域，连接到所述第一栅极线和所述第一数据线的所述第一TFT以及连接到所述第一栅极线和所述第二数据线的所述第二TFT，所述第一像素区域中的第一像素电极， TFT和第二像素电极，并且连接到第二TFT，与第一基板相对的第二基板和在第一和第二基板之间的液晶层，液晶层具有光学各向同性，而没有 电场和电场的双折射性质。

    BLUE PHASE LIQUID CRYSTAL DISPLAY DEVICE
    8.
    发明申请
    BLUE PHASE LIQUID CRYSTAL DISPLAY DEVICE 有权
    蓝相液晶显示装置

    公开(公告)号：US20110141424A1

    公开(公告)日：2011-06-16

    申请号：US12958976

    申请日：2010-12-02

    申请人： Sang-Wook LEE ,  Hyun-Jin Park ,  Eun-Jung Lim ,  Dong-Kyu Yoon

    发明人： Sang-Wook LEE ,  Hyun-Jin Park ,  Eun-Jung Lim ,  Dong-Kyu Yoon

    IPC分类号： G02F1/1343

    CPC分类号： C09K19/0275 ,  C09K19/22 ,  C09K19/44

    摘要： A blue phase liquid crystal display device includes a first substrate having a first pixel region, a first gate line on the first substrate, first and second data lines on the first substrate, a first thin film transistor (TFT) and a second TFT disposed in the first pixel region, the first TFT connected to the first gate line and the first data line, and the second TFT connected to the first gate line and the second data line, a first pixel electrode in the first pixel region and connected to the first TFT, and a second pixel electrode in the first pixel region and connected to the second TFT, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates, the liquid crystal layer having an optical isotropic property without an electric field and a birefringence property with the electric field.

    摘要翻译： 蓝相液晶显示装置包括具有第一像素区域的第一基板，第一基板上的第一栅极线，第一基板上的第一和第二数据线，设置在第一基板上的第一薄膜晶体管（TFT）和第二TFT 所述第一像素区域，连接到所述第一栅极线和所述第一数据线的所述第一TFT以及连接到所述第一栅极线和所述第二数据线的所述第二TFT，所述第一像素区域中的第一像素电极， TFT和第二像素电极，并且连接到第二TFT，与第一基板相对的第二基板和在第一和第二基板之间的液晶层，液晶层具有光学各向同性，而没有 电场和电场的双折射性质。

    LIQUID CRYSTAL DISPLAY DEVICE
    9.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权
    液晶显示装置

    公开(公告)号：US20110141421A1

    公开(公告)日：2011-06-16

    申请号：US12946242

    申请日：2010-11-15

    申请人： Sang-Wook LEE ,  Hyun-Jin Park ,  Jong-Hoon Woo ,  Dong-Kyu Yoon ,  Woo-Keun Lee

    发明人： Sang-Wook LEE ,  Hyun-Jin Park ,  Jong-Hoon Woo ,  Dong-Kyu Yoon ,  Woo-Keun Lee

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/134309 ,  G02F1/134363 ,  G02F1/1393 ,  G02F1/1418 ,  G02F2001/13793

    摘要： A liquid crystal display device includes: first and second substrates facing and spaced apart from each other; a plurality of insulating patterns on an inner surface of the first substrate; a plurality of pixel electrodes and a plurality of common electrodes on the plurality of insulating patterns, the plurality of pixel electrodes alternating with the plurality of common electrodes, the adjacent pixel and common electrodes generating a horizontal electric field according to a driving voltage; and a liquid crystal layer between the first and second substrates, the liquid crystal layer including one of a blue phase liquid crystal molecules and a uniform standing helix liquid crystal molecules.

    摘要翻译： 液晶显示装置包括：面对并彼此间隔开的第一和第二基板; 在所述第一基板的内表面上的多个绝缘图案; 多个像素电极和多个公共电极，所述多个像素电极与所述多个公共电极交替，所述相邻像素和所述公共电极根据驱动电压产生水平电场; 以及在所述第一和第二基板之间的液晶层，所述液晶层包括蓝相液晶分子和均匀的静止螺旋液晶分子之一。

    Liquid crystal display
    10.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号：US07898621B2

    公开(公告)日：2011-03-01

    申请号：US11439761

    申请日：2006-05-23

    申请人： Sin-Doo Lee ,  Yeun-Tae Kim ,  Cherlhyun Jeong ,  Sang-Wook Lee

    发明人： Sin-Doo Lee ,  Yeun-Tae Kim ,  Cherlhyun Jeong ,  Sang-Wook Lee

    IPC分类号： G02F1/1337

    CPC分类号： G02F1/133753

    摘要： An LCD according to an embodiment of the present invention includes: a first substrate; a first electrode disposed on the first substrate; a second substrate facing the first substrate; a second electrode disposed on the second substrate; a liquid crystal layer disposed between the first electrode and the second electrode; and a first alignment film attached on the first electrode and having a position-dependent thickness that achieves variations of the dielectric constant of from 1 to about 50.

    摘要翻译： 根据本发明的实施例的LCD包括：第一基板; 设置在所述第一基板上的第一电极; 面对所述第一基板的第二基板; 设置在所述第二基板上的第二电极; 设置在所述第一电极和所述第二电极之间的液晶层; 以及附着在第一电极上并具有取决于介电常数为1至约50的变化的位置相关厚度的第一取向膜。