公开(公告)号：US08790584B2

公开(公告)日：2014-07-29

申请号：US12938506

申请日：2010-11-03

申请人： Byung Moon Moon ,  Je Sik Shin ,  Tae U Yu ,  Hyun Jin Koo ,  Dong Ho Park ,  Ho Moon Lee

发明人： Byung Moon Moon ,  Je Sik Shin ,  Tae U Yu ,  Hyun Jin Koo ,  Dong Ho Park ,  Ho Moon Lee

IPC分类号： B01J19/08

CPC分类号： H05H1/48 ,  C01B33/037 ,  H05H1/42 ,  H05H2001/3484

摘要： Disclosed is a system for refining UMG Si including a vacuum chamber, a cold crucible disposed within the vacuum chamber, a device disposed within the vacuum chamber to supply Si to the cold crucible, a steam plasma torch disposed above the cold crucible to apply steam plasma formed by introducing a reactive gas into plasma flame by an inert gas to the Si supplied to the cold crucible, and an impurity collector disposed above the cold crucible within the vacuum chamber to collect impurity gas generated in the cold crucible and discharge the collected impurity gas to the outside of the vacuum chamber.

摘要翻译： 公开了一种用于精炼包括真空室的UMG Si的系统，设置在真空室内的冷坩埚，设置在真空室内以将Si供应到冷坩埚的装置，设置在冷坩埚上方的蒸汽等离子体焰炬，以施加蒸汽等离子体 通过惰性气体将反应性气体引入等离子体火焰中，形成于向冷坩埚供给的Si，以及杂质收集体，其设置在真空室内的冷坩埚的上方，以收集在冷坩埚中产生的杂质气体，并排出收集的杂质气体 到真空室的外部。

公开(公告)号：US09352970B2

公开(公告)日：2016-05-31

申请号：US14380239

申请日：2012-06-28

申请人： Byung Moon Moon ,  Tae U Yu ,  Dong Ho Park ,  Hyun Jin Koo ,  Gang June Kim ,  Eun Su Jang ,  Sang Wook Lee

发明人： Byung Moon Moon ,  Tae U Yu ,  Dong Ho Park ,  Hyun Jin Koo ,  Gang June Kim ,  Eun Su Jang ,  Sang Wook Lee

IPC分类号： C01B33/039 ,  C01B33/037 ,  C07C29/74 ,  C01B33/025

CPC分类号： C01B33/039 ,  C01B33/025 ,  C01B33/037 ,  C07C29/74 ,  C07C31/18

摘要： In order to produce metallurgical grade silicon and solar cell grade polysilicon in batches, a method of the present invention comprises: a step of reduction in an arc furnace, consisting of removing C and CO in a silicon reduction atmosphere using silica stone and carbon black by an arc so as to produce metallurgical grade silicon; a step of refining by slag consisting of removing phosphorus (P) and boron (B) by slag; a step of refining by unidirectional solidification consisting of removing metal impurities (Fe, Al, Ti, Mn, etc.) by means of unidirectional solidification; and a step of steam plasma-electromagnetism continuous refining consisting of charging a furnace with the unidirectionally solidified silicon and removing boron (B) by a steam plasma torch.

摘要翻译： 为了分批生产冶金级硅和太阳能电池级多晶硅，本发明的方法包括：还原电弧炉的步骤包括使用硅石和炭黑通过硅还原气氛中的C和CO除去 电弧，以生产冶金级硅; 通过炉渣除去磷（P）和硼（B）组成的炉渣精炼的步骤; 通过单向凝固除去金属杂质（Fe，Al，Ti，Mn等）的单向凝固精制步骤; 以及蒸汽等离子体 - 电磁连续精炼的步骤，其包括将炉子与单向固化的硅进行加热，并通过蒸汽等离子体焰炬除去硼（B）。

公开(公告)号：US20150135770A1

公开(公告)日：2015-05-21

申请号：US14380239

申请日：2012-06-28

申请人： Byung Moon Moon ,  Tae U Yu ,  Dong Ho Park ,  Hyun Jin Koo ,  Gang June Kim ,  Eun Su Jang ,  Sang Wook Lee

发明人： Byung Moon Moon ,  Tae U Yu ,  Dong Ho Park ,  Hyun Jin Koo ,  Gang June Kim ,  Eun Su Jang ,  Sang Wook Lee

IPC分类号： C01B33/039

CPC分类号： C01B33/039 ,  C01B33/025 ,  C01B33/037 ,  C07C29/74 ,  C07C31/18

摘要： In order to produce metallurgical grade silicon and solar cell grade polysilicon in batches, a method of the present invention comprises: a step of reduction in an arc furnace, consisting of removing C and CO in a silicon reduction atmosphere using silica stone and carbon black by an arc so as to produce metallurgical grade silicon; a step of refining by slag consisting of removing phosphorus (P) and boron (B) by slag; a step of refining by unidirectional solidification consisting of removing metal impurities (Fe, Al, Ti, Mn, etc.) by means of unidirectional solidification; and a step of steam plasma-electromagnetism continuous refining consisting of charging a furnace with the unidirectionally solidified silicon and removing boron (B) by a steam plasma torch.

摘要翻译： 为了分批生产冶金级硅和太阳能电池级多晶硅，本发明的方法包括：还原电弧炉的步骤包括使用硅石和炭黑通过硅还原气氛中的C和CO除去 电弧，以生产冶金级硅; 通过炉渣除去磷（P）和硼（B）组成的炉渣精炼的步骤; 通过单向凝固除去金属杂质（Fe，Al，Ti，Mn等）的单向凝固精制步骤; 以及蒸汽等离子体 - 电磁连续精炼的步骤，其包括将炉子与单向固化的硅进行加热，并通过蒸汽等离子体焰炬除去硼（B）。

公开(公告)号：US20110142724A1

公开(公告)日：2011-06-16

申请号：US12938506

申请日：2010-11-03

申请人： Byung Moon Moon ,  Je Sik Shin ,  Tae U. Yu ,  Hyun Jin Koo ,  Dong Ho Park ,  Ho Moon Lee

发明人： Byung Moon Moon ,  Je Sik Shin ,  Tae U. Yu ,  Hyun Jin Koo ,  Dong Ho Park ,  Ho Moon Lee

IPC分类号： B01J19/08

CPC分类号： H05H1/48 ,  C01B33/037 ,  H05H1/42 ,  H05H2001/3484

摘要： Disclosed is a system for refining UMG Si including a vacuum chamber, a cold crucible disposed within the vacuum chamber, a device disposed within the vacuum chamber to supply Si to the cold crucible, a steam plasma torch disposed above the cold crucible to apply steam plasma formed by introducing a reactive gas into plasma flame by an inert gas to the Si supplied to the cold crucible, and an impurity collector disposed above the cold crucible within the vacuum chamber to collect impurity gas generated in the cold crucible and discharge the collected impurity gas to the outside of the vacuum chamber.

摘要翻译： 公开了一种用于精炼包括真空室的UMG Si的系统，设置在真空室内的冷坩埚，设置在真空室内以将Si供应到冷坩埚的装置，设置在冷坩埚上方的蒸汽等离子体焰炬，以施加蒸汽等离子体 通过惰性气体将反应性气体引入等离子体火焰中，形成于向冷坩埚供给的Si，以及杂质收集体，其设置在真空室内的冷坩埚的上方，以收集在冷坩埚中产生的杂质气体，并排出收集的杂质气体 到真空室的外部。