摘要:
A wiring structure includes a substrate, a copper oxide layer having 16˜39 at % oxygen on the substrate and a copper layer on the copper oxide layer. The copper oxide layer has a thickness of 10-1000 Å and the copper layer has a thickness of 300-8000 Å. The copper layer and the copper oxide layer further have an alloy element less than 10 wt % and the alloy element is selected from the group of Ag, Ni, Mg, Zr, N.