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    CMOS image sensor and driving method thereof
    1.
    发明授权
    CMOS image sensor and driving method thereof 有权
    CMOS图像传感器及其驱动方法

    公开(公告)号：US08692918B2

    公开(公告)日：2014-04-08

    申请号：US12292691

    申请日：2008-11-24

    申请人： Hyun-chul Song ,  Sang-sik Park ,  Won-hee Choe ,  Jae-hyun Kwon

    发明人： Hyun-chul Song ,  Sang-sik Park ,  Won-hee Choe ,  Jae-hyun Kwon

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/3559 ,  H04N5/3745

    摘要： A CMOS image sensor is provided. The CMOS image sensor includes a photodiode receiving light and generating photocharges, a transfer transistor connected to the photodiode and transferring the photocharges, a floating diffusion accumulating the photocharges transferred from the transfer transistor, a reset transistor discharging the photocharges accumulated in the floating diffusion, and a merge gate transistor controlling capacitance of the floating diffusion. The CMOS image sensor may obtain a wide dynamic range signal without an increase in size of a pixel.

    摘要翻译： 提供CMOS图像传感器。 CMOS图像传感器包括接收光并产生光电荷的光电二极管，连接到光电二极管并传送光电荷的转移晶体管，积聚从转移晶体管传送的光电荷的浮动扩散，放电浮动扩散中累积的光电荷的复位晶体管，以及 合并栅极晶体管，控制浮动扩散的电容。 CMOS图像传感器可以获得宽的动态范围信号而不增加像素的尺寸。

    Output-compensated buffers with source-follower input structure, methods of operating same, and image capture devices using same
    6.
    发明授权
    Output-compensated buffers with source-follower input structure, methods of operating same, and image capture devices using same 失效
    具有源极跟随器输入结构的输出补偿缓冲器，其操作方法以及使用其的图像捕获器件

    公开(公告)号：US07088393B1

    公开(公告)日：2006-08-08

    申请号：US09399995

    申请日：1999-09-20

    申请人： Sang-Sik Park

    发明人： Sang-Sik Park

    IPC分类号： H04N3/14 ,  H03F3/16 ,  H03F1/38 ,  H03F1/36

    CPC分类号： G11C19/285 ,  H03F1/342 ,  H03F3/505 ,  H04N5/378

    摘要： An output-compensated buffer includes a buffer circuit that receives an input signal and produces an output signal responsive thereto at an output terminal, the buffer circuit including an input source-follower circuit that receives the input signal. A feedback circuit is connected to the output terminal and to the input source follower circuit and operative to vary an input capacitance of the source follower circuit responsive to the output signal at the output terminal. The input source follower circuit preferably includes a bias terminal coupled to a power source, and the feedback circuit is preferably capacitively coupled to the bias terminal. According to another aspect, an image capture device includes a charged coupled device (CCD) that generates a video signal. A buffer circuit is responsive to the CCD and operative to receives the video signal and produce an output signal responsive thereto at an output terminal, the buffer circuit including an input source-follower circuit that receives the video signal. A feedback circuit is connected to the output terminal and to the input source follower circuit and operative to vary an input capacitance of the source follower circuit responsive to the output signal at the output terminal.

    摘要翻译： 输出补偿缓冲器包括缓冲电路，其接收输入信号并在输出端产生响应于此的输出信号，该缓冲电路包括接收输入信号的输入源跟随器电路。 反馈电路连接到输出端子和输入源极跟随器电路，并且可操作以响应于输出端子处的输出信号改变源极跟随器电路的输入电容。 输入源极跟随器电路优选地包括耦合到电源的偏置端子，并且反馈电路优选地电容耦合到偏置端子。 根据另一方面，图像捕获装置包括产生视频信号的电荷耦合器件（CCD）。 缓冲电路响应于CCD并且可操作地接收视频信号并在输出端产生响应于此的输出信号，该缓冲电路包括接收视频信号的输入源跟随器电路。 反馈电路连接到输出端子和输入源极跟随器电路，并且可操作以响应于输出端子处的输出信号改变源极跟随器电路的输入电容。

    Method for manufacturing solid state image pick-up device
    7.
    发明授权
    Method for manufacturing solid state image pick-up device 失效
    固态摄像装置的制造方法

    公开(公告)号：US06686259B2

    公开(公告)日：2004-02-03

    申请号：US09994507

    申请日：2001-11-27

    申请人： Sang-sik Park ,  Mikio Takagi ,  Jae-heon Choi ,  Sang-il Jung ,  Jun-taek Lee

    发明人： Sang-sik Park ,  Mikio Takagi ,  Jae-heon Choi ,  Sang-il Jung ,  Jun-taek Lee

    IPC分类号： H01L21322

    CPC分类号： H01L21/3221 ,  H01L27/14601 ,  H01L27/14665

    摘要： In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.

    摘要翻译： 在制造能够提高吸气效率的固体摄像装置的方法中，提供了可以形成固体摄像装置的正面的半导体衬底和与正面相反的后侧。 随后，在半导体衬底的后侧形成包含具有预定浓度的吸杂杂质的多晶硅层。 接下来，包含用于吸杂的杂质的多晶硅层的预定厚度被氧化，并且用于吸杂的杂质被冷凝成还原的多晶硅层。