公开(公告)号：US07736961B2

公开(公告)日：2010-06-15

申请号：US11168047

申请日：2005-06-28

申请人： Steven L. Merchant ,  Philip L. Hower ,  Scott Paiva

发明人： Steven L. Merchant ,  Philip L. Hower ,  Scott Paiva

IPC分类号： H01L21/337

CPC分类号： H01L29/7835 ,  H01L29/66659

摘要： A high voltage field effect transistor device is fabricated. A substrate is provided. Isolation structures and well regions are formed therein. Drain well regions are formed within the well regions. An n-type channel stop resist mask is formed. N-type channel stop regions and n-type surface channel regions are formed. A p-type channel stop resist mask is formed. P-type channel stop regions and p-type surface channel regions are then formed. A dielectric layer is formed over the surface channel regions. Source regions are formed within the well regions. Drain regions are formed within the drain well regions. Back gate regions are formed within the well regions. Top gates are formed on the dielectric layer overlying the surface channel regions.

摘要翻译： 制造高电压场效应晶体管器件。 提供基板。 在其中形成隔离结构和阱区。 排水井区域形成在井区域内。 形成n型通道阻挡掩模。 形成N型沟道截止区域和n型表面沟道区域。 形成p型通道阻挡掩模。 然后形成P型沟道停止区域和p型表面沟道区域。 在表面通道区域上形成电介质层。 源区域形成在阱区域内。 漏极区域形成在漏极阱区域内。 在阱区中形成背栅区。 在覆盖表面通道区域的电介质层上形成顶部栅极。

公开(公告)号：US20060292771A1

公开(公告)日：2006-12-28

申请号：US11168047

申请日：2005-06-28

申请人： Steven Merchant ,  Philip Hower ,  Scott Paiva

发明人： Steven Merchant ,  Philip Hower ,  Scott Paiva

IPC分类号： H01L21/337

CPC分类号： H01L29/7835 ,  H01L29/66659

摘要： A high voltage field effect transistor device is fabricated. A substrate is provided. Isolation structures and well regions are formed therein. Drain well regions are formed within the well regions. An n-type channel stop resist mask is formed. N-type channel stop regions and n-type surface channel regions are formed. A p-type channel stop resist mask is formed. P-type channel stop regions and p-type surface channel regions are then formed. A dielectric layer is formed over the surface channel regions. Source regions are formed within the well regions. Drain regions are formed within the drain well regions. Back gate regions are formed within the well regions. Top gates are formed on the dielectric layer overlying the surface channel regions.

摘要翻译： 制造高电压场效应晶体管器件。 提供基板。 在其中形成隔离结构和阱区。 排水井区域形成在井区域内。 形成n型通道阻挡掩模。 形成N型沟道截止区域和n型表面沟道区域。 形成p型通道阻挡掩模。 然后形成P型沟道停止区域和p型表面沟道区域。 在表面通道区域上形成电介质层。 源区域形成在阱区域内。 漏极区域形成在漏极阱区域内。 在阱区中形成背栅区。 在覆盖表面通道区域的电介质层上形成顶部栅极。

公开(公告)号：US06532427B1

公开(公告)日：2003-03-11

申请号：US09853089

申请日：2001-05-10

申请人： Madhukar Joshi ,  Scott Paiva

发明人： Madhukar Joshi ,  Scott Paiva

IPC分类号： G06F1900

CPC分类号： G06F17/30864

摘要： A statistical process control information system includes a process information system (process IS) and an analysis information system (analysis IS). The analysis IS generates a script file and a command file. The script file includes responses to command-line queries generated by a process data extraction program, and the command file includes commands for invoking the process data extraction program and copying an extracted data file to the analysis IS. The analysis IS issues a command to the process IS to execute an extraction command routine, causing the process IS to copy and execute the command file. The analysis IS performs statistical analysis on the extracted data file and creates graphical SPC chart files, including a hypertext summary, and these are posted in a network-accessible database for users.

摘要翻译： 统计过程控制信息系统包括过程信息系统（过程IS）和分析信息系统（分析IS）。 分析IS生成脚本文件和命令文件。 脚本文件包括对由过程数据提取程序生成的命令行查询的响应，并且命令文件包括用于调用过程数据提取程序并将提取的数据文件复制到分析IS的命令。 分析IS向进程IS发出命令以执行提取命令例程，导致进程IS复制并执行命令文件。 分析IS对提取的数据文件执行统计分析，并创建包括超文本摘要的图形SPC图表文件，并将这些文件发布到用户的网络可访问数据库中。