公开(公告)号：US06417998B1

公开(公告)日：2002-07-09

申请号：US09274187

申请日：1999-03-23

申请人： Billy W. Crue, Jr. ,  Zhupei Shi ,  Vijay K. Dhingra ,  Sean Yao

发明人： Billy W. Crue, Jr. ,  Zhupei Shi ,  Vijay K. Dhingra ,  Sean Yao

IPC分类号： G11B539

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/313

摘要： A magnetoresistive write element having a planar coil layer between a first pole and a second pole. The magnetoresistive write element further includes a buildup insulation layer having an upper surface that is substantially coplanar with an upper surface of the first pole. Further, the planar coil layer is disposed above both the first pole and the buildup insulation layer. A method for forming a magnetoresistive write element includes providing a first pole and covering the first pole with an insulating layer. The insulating layer is then planarized, thereby exposing the first pole and defining a buildup insulation layer. This planarization also results in the formation of a substantially planar upper surface of the buildup insulation layer and a substantially planar upper surface of the first pole. More specifically, the first pole upper surface is substantially coplanar with the buildup insulation layer upper surface. The method also includes forming a write gap material layer above the insulation layer and first pole, and forming a substantially planar coil layer above said write gap material layer. In addition, a second pole is formed above the write gap material layer, with the coil layer thereby disposed between the first pole and the second pole.

摘要翻译： 一种在第一极和第二极之间具有平面线圈层的磁阻写入元件。 磁阻写入元件还包括具有与第一极的上表面基本共面的上表面的积层绝缘层。 此外，平面线圈层设置在第一极和积层绝缘层两者之上。 形成磁阻写入元件的方法包括提供第一极并且用绝缘层覆盖第一极。 然后将绝缘层平坦化，从而暴露第一极并限定积层绝缘层。 这种平面化还导致形成积层绝缘层的基本平坦的上表面和第一极的基本平坦的上表面。 更具体地，第一极上表面与积层绝缘层上表面基本上共面。 该方法还包括在绝缘层和第一极之上形成写间隙材料层，以及在所述写间隙材料层之上形成基本平面的线圈层。 此外，在写入间隙材料层的上方形成第二极，由此将线圈层设置在第一极和第二极之间。

公开(公告)号：US06304414B1

公开(公告)日：2001-10-16

申请号：US09357580

申请日：1999-07-20

申请人： Billy W. Crue, Jr. ,  Renuka Apparao ,  Zhupei Shi ,  Sean Yao

发明人： Billy W. Crue, Jr. ,  Renuka Apparao ,  Zhupei Shi ,  Sean Yao

IPC分类号： G11B531

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/313

摘要： A magnetoresistive write element having a greatly reduced stack height allowing construction of a smaller track width and tighter track width tolerances. The reduced stack height also produces improved magnetic flux flow properties in the write element leading to an improved magnetic fringing field in the write gap region The magnetoresistive write head includes an electrically conductive planar coil having a portion thereof extending between first and second poles. The first and second poles join one another to form a magnetic yoke which is closed at one end and open at the other. An insulation layer separates the coil from the first pole. Another layer of insulating material is formed into the coil, interspersed between the winds and having an upper surface which is flush with the upper surface of the coil. A thin layer of write gap material insulates the coil from the second pole. Since there is only a thin layer of write gap material between the coil and the second pole, rather than a thicker insulation layer, the topography of the second pole can be reduced. This lowers the stack height which allows the second pole to be constructed to define a smaller write gap with tighter tolerances.

摘要翻译： 具有大大降低的堆叠高度的磁阻写入元件，允许构造更小的轨道宽度和更紧密的轨道宽度公差。 减小的堆叠高度还在写入元件中产生改善的磁通流动特性，导致写入间隙区域中改善的磁边界场磁阻写入头包括导电平面线圈，其具有在第一和第二极之间延伸的部分。 第一和第二极彼此结合形成磁轭，该磁轭在一端封闭并在另一端开放。 绝缘层将线圈与第一极分开。 绝缘材料的另一层形成为线圈，散布在风之间并且具有与线圈的上表面齐平的上表面。 写入间隙材料的薄层将线圈与第二极绝缘。 由于在线圈和第二极之间只有薄层的写间隙材料，而不是较厚的绝缘层，所以可以减小第二极的形貌。 这降低了堆叠高度，这允许构造第二极点以限定更小的公差的写入间隙。

公开(公告)号：US07211518B2

公开(公告)日：2007-05-01

申请号：US10828065

申请日：2004-04-19

申请人： Xiaoqiang Sean Yao ,  Bi-Ming Yen ,  Taejoon Han ,  Peter Loewenhardt

发明人： Xiaoqiang Sean Yao ,  Bi-Ming Yen ,  Taejoon Han ,  Peter Loewenhardt

IPC分类号： H01L21/465

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/31116 ,  Y10S438/905

摘要： A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.

摘要翻译： 提供了一种用于在电介质层中形成特征的方法和用于多个晶片的开口阻挡层并且在处理和去除多个晶片中的每个晶片之后清洁蚀刻室。 将多个晶片的晶片放置在蚀刻室中，其中晶片在晶片上方具有阻挡层，并且在阻挡层上方具有介电层。 蚀刻介电层。 阻隔层打开。 从蚀刻室移除晶片。 提供了没有晶片的蚀刻室的无晶圆自动清洗。 无晶圆自动清洁包括向蚀刻室提供包括氧和氮的无晶圆自动清洁气体，并从无晶圆自动清洁气体形成无晶圆的自动清洗等离子体，以清洁蚀刻室。