公开(公告)号：US5846921A

公开(公告)日：1998-12-08

申请号：US805210

申请日：1997-02-27

申请人： June-ing Gil ,  Seok-ho Yi ,  Sang-mun Chon ,  Ho-kyoon Chung

发明人： June-ing Gil ,  Seok-ho Yi ,  Sang-mun Chon ,  Ho-kyoon Chung

IPC分类号： H01L21/304 ,  C11D3/39 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C11D7/54 ,  B08B3/08 ,  C11D7/28

CPC分类号： C11D7/08 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/261

摘要： Cleaning solutions for application to semiconductor substrates comprise hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water. Methods of cleaning semiconductor substrates comprise contacting the semiconductor substrates having contaminants contained thereon with cleaning solutions comprising hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water; contacting the semiconductor substrates with first baths of water to remove the cleaning solutions contained on the semiconductor substrates; contacting the semiconductor substrates with second baths containing water to remove the contaminants contained on the semiconductor substrates; and rotating the semiconductor substrates to remove water remaining thereon to clean the semiconductor substrates.

摘要翻译： 用于半导体衬底的清洁溶液包括氢氟酸，过氧化氢，异丙醇和水。 清洗半导体衬底的方法包括将其上含有污染物的半导体衬底与包含氢氟酸，过氧化氢，异丙醇和水的清洁溶液接触; 使半导体衬底与第一浴水接触，以除去包含在半导体衬底上的清洁溶液; 使半导体衬底与含有水的第二浴接触以除去包含在半导体衬底上的污染物; 并旋转半导体衬底以去除残留在其上的水以清洁半导体衬底。