公开(公告)号：US20110127580A1

公开(公告)日：2011-06-02

申请号：US12990353

申请日：2009-04-30

申请人： Jea-Gun Park ,  Tae-Hun Shim ,  Gon-Sub Lee ,  Seong-Je Kim ,  Tae-Hyun Kim

发明人： Jea-Gun Park ,  Tae-Hun Shim ,  Gon-Sub Lee ,  Seong-Je Kim ,  Tae-Hyun Kim

IPC分类号： H01L29/772

CPC分类号： H01L29/4234 ,  G11C11/404 ,  G11C16/0466 ,  G11C2211/4016 ,  H01L27/10802 ,  H01L29/7841 ,  H01L29/78687 ,  H01L29/78696

摘要： Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage region disposed on a partial region of the insulating layer, a channel region disposed on the storage region to provide a valence band energy offset between the channel region and the storage region, a gate insulating layer and a gate electrode sequentially disposed on the channel region, and source and drain regions connected to the channel region and disposed at both sides of the gate electrode. A storage region having different valence band energy from a channel region is disposed under the channel region unit so that charges trapped in the storage region unit cannot be easily drained. Thus, a charge retention time may be increased to improve data storage capability.

摘要翻译： 提供了一种无电容器存储器件。 所述器件包括半导体衬底，设置在所述半导体衬底上的绝缘层，设置在所述绝缘层的部分区域上的存储区域，设置在所述存储区域上以在所述沟道区域和所述沟道区域之间提供价带能量偏移的沟道区域 顺序地设置在沟道区上的栅极绝缘层和栅电极以及连接到沟道区并设置在栅电极两侧的源极和漏极区。 在通道区域单元的下方配置具有与通道区域不同的价带能量的存储区域，使得捕获在存储区域单元中的电荷不容易排出。 因此，可以增加电荷保留时间以提高数据存储能力。

公开(公告)号：US08860109B2

公开(公告)日：2014-10-14

申请号：US12990353

申请日：2009-04-30

申请人： Jea-Gun Park ,  Tae-Hun Shim ,  Gon-Sub Lee ,  Seong-Je Kim ,  Tae-Hyun Kim

发明人： Jea-Gun Park ,  Tae-Hun Shim ,  Gon-Sub Lee ,  Seong-Je Kim ,  Tae-Hyun Kim

IPC分类号： H01L27/108 ,  H01L29/78 ,  G11C11/404 ,  H01L29/423 ,  G11C16/04 ,  H01L29/786

CPC分类号： H01L29/4234 ,  G11C11/404 ,  G11C16/0466 ,  G11C2211/4016 ,  H01L27/10802 ,  H01L29/7841 ,  H01L29/78687 ,  H01L29/78696

摘要： Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage region disposed on a partial region of the insulating layer, a channel region disposed on the storage region to provide a valence band energy offset between the channel region and the storage region, a gate insulating layer and a gate electrode sequentially disposed on the channel region, and source and drain regions connected to the channel region and disposed at both sides of the gate electrode. A storage region having different valence band energy from a channel region is disposed under the channel region unit so that charges trapped in the storage region unit cannot be easily drained. Thus, a charge retention time may be increased to improve data storage capability.

摘要翻译： 提供了一种无电容器存储器件。 所述器件包括半导体衬底，设置在所述半导体衬底上的绝缘层，设置在所述绝缘层的部分区域上的存储区域，设置在所述存储区域上以在所述沟道区域和所述沟道区域之间提供价带能量偏移的沟道区域 顺序地设置在沟道区上的栅极绝缘层和栅电极以及连接到沟道区并设置在栅电极两侧的源极和漏极区。 在通道区域单元的下方配置具有与通道区域不同的价带能量的存储区域，使得捕获在存储区域单元中的电荷不容易排出。 因此，可以增加电荷保留时间以提高数据存储能力。