公开(公告)号：US20110315994A1

公开(公告)日：2011-12-29

申请号：US13229272

申请日：2011-09-09

申请人： Hee-Dong CHOI ,  Seong-Moh SEO

发明人： Hee-Dong CHOI ,  Seong-Moh SEO

IPC分类号： H01L29/786 ,  H01L33/08

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.

摘要翻译： 一种制造显示装置的方法包括：在基板上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成有源层，由外部多晶硅制成的栅电极，由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。

公开(公告)号：US08030106B2

公开(公告)日：2011-10-04

申请号：US12497101

申请日：2009-07-02

申请人： Hee-Dong Choi ,  Seong-Moh Seo

发明人： Hee-Dong Choi ,  Seong-Moh Seo

IPC分类号： H01L21/84

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.

摘要翻译： 一种制造显示装置的方法包括：在基板上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成有源层，由外部多晶硅制成的栅电极，由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。

公开(公告)号：US20100093120A1

公开(公告)日：2010-04-15

申请号：US12625904

申请日：2009-11-25

申请人： Seong Moh Seo

发明人： Seong Moh Seo

IPC分类号： H01L21/00 ,  H01L21/336

CPC分类号： H01L27/3248 ,  H01L2251/5315

摘要： A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a substrate, a gate electrode positioned on the substrate, a first insulating layer positioned on the substrate comprising the gate electrode, an amorphous silicon layer positioned on the first insulating layer so that a predetermined area thereof corresponds to the gate electrode, ohmic layers that positioned on a predetermined area of the amorphous silicon layer, the ohmic layers defining a source area and a drain area, a source electrode or a drain electrode electrically connected to any one of the ohmic layers and a cathode that is electrically connected to the other one of the ohmic layers, a second insulating layer positioned on the substrate comprising the source electrode or the drain electrode and the cathode, the second insulating layer comprising an opening exposing a portion of the cathode, an emitting layer positioned within the opening, and an anode positioned on the substrate comprising the emitting layer.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括衬底，位于衬底上的栅电极，位于包括栅电极的衬底上的第一绝缘层，位于第一绝缘层上的非晶硅层，使得其预定面积对应于栅电极 位于非晶硅层的预定区域上的欧姆层，限定源极区域和漏极区域的欧姆层，电连接到任一欧姆层的源电极或漏电极以及电连接的阴极 位于所述基板上的第二绝缘层，所述第二绝缘层包括所述源电极或所述漏电极和所述阴极，所述第二绝缘层包括暴露所述阴极的一部分的开口，位于所述开口内的发光层 以及位于包括发光层的基板上的阳极。

公开(公告)号：US07173680B2

公开(公告)日：2007-02-06

申请号：US11334693

申请日：2006-01-19

申请人： Seong Moh Seo ,  Hyun Ho Shin ,  Kyeong Jin Kim ,  Yun Bok Lee ,  Jeom Jae Kim

发明人： Seong Moh Seo ,  Hyun Ho Shin ,  Kyeong Jin Kim ,  Yun Bok Lee ,  Jeom Jae Kim

IPC分类号： G02F1/1337 ,  G02F1/1343

CPC分类号： G02F1/133707 ,  G02F1/133512 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/133519 ,  G02F2001/133562 ,  G02F2001/136218

摘要： A multi-domain liquid crystal display device includes first and second substrates facing each other and a liquid crystal layer between the first and second substrates. A plurality of gate bus lines are arranged in a first direction on the first substrate and a plurality of data bus lines are arranged in a second direction on the first substrate to define a pixel region. A pixel electrode is electrically charged through the data bus line in the pixel region. A common-auxiliary electrode surrounds the pixel electrode on a same layer whereon the gate bus line is formed.

摘要翻译： 多域液晶显示装置包括彼此面对的第一和第二基板以及第一和第二基板之间的液晶层。 在第一基板上沿第一方向布置多条栅极总线，并且在第一基板上沿第二方向布置多条数据总线以限定像素区域。 像素电极通过像素区域中的数据总线进行充电。 共同辅助电极围绕形成栅极总线的同一层上的像素电极。

公开(公告)号：US07079211B2

公开(公告)日：2006-07-18

申请号：US10805482

申请日：2004-03-22

申请人： Kyeong Jin Kim ,  Do Hee Kwon ,  Seong Moh Seo

发明人： Kyeong Jin Kim ,  Do Hee Kwon ,  Seong Moh Seo

IPC分类号： G02F1/1337

CPC分类号： G02F1/133753 ,  G02F1/133788 ,  G02F1/1362 ,  G02F1/136286

摘要： Multi-domain liquid crystal display including a first substrates and a second substrate, a liquid crystal layer between the first and second substrates, a plurality of gatelines and datalines on the first substrate crossed each other at fixed intervals, a pixel electrode in each of pixel regions formed between the gatelines and the datalines, a supplementary electrode around each of the pixel electrodes in the same layer with the pixel electrodes, at least one field induction window in each of the pixel regions, and an optical orientation film formed at least one of the first and second substrates.

摘要翻译： 包括第一基板和第二基板的多畴液晶显示器，第一和第二基板之间的液晶层，第一基板上的多个栅格和数据线以固定间隔彼此交叉，每个像素中的像素电极 形成在基准线和数据线之间的区域，与像素电极在同一层中的每个像素电极周围的辅助电极，每个像素区域中的至少一个场感应窗口，以及形成有至少一个 第一和第二基板。

公开(公告)号：US20060152151A1

公开(公告)日：2006-07-13

申请号：US11297708

申请日：2005-12-08

申请人： Seong-Moh Seo

发明人： Seong-Moh Seo

IPC分类号： H05B33/00

CPC分类号： H01L27/322 ,  H01L27/3244 ,  H01L2251/5315

摘要： An organic light emitting display and a method of fabricating the same are provided. The organic light emitting display includes: a substrate having a plurality of pixel regions; a thin film transistor formed at each pixel region of the substrate and including a semiconductor layer, a gate electrode, and source and drain electrodes; a color filter layer formed on the transistor at each pixel region; a first electrode patterned to be in contact with one of the source and drain electrodes of the thin film transistor through a via-hole in the color filter layer; a pixel defining layer having an opening formed to expose a portion of the first electrode; an emission layer formed on the exposed first electrode; and a second electrode formed on the emission layer over the substrate. Therefore, it is possible to simplify the process by forming the color filter layers between the thin film transistor and the first electrode, without a passivation layer, increase process stability by increasing alignment margin between upper and lower substrates when the color filter layer is adhered, and facilitate top and bottom emission.

摘要翻译： 提供了一种有机发光显示器及其制造方法。 有机发光显示器包括：具有多个像素区域的基板; 形成在所述基板的每个像素区域处的薄膜晶体管，并且包括半导体层，栅极电极和源极和漏极电极; 滤色器层，形成在每个像素区域的晶体管上; 图案化为通过滤色器层中的通孔与薄膜晶体管的源极和漏极之一接触的第一电极; 具有形成为暴露第一电极的一部分的开口的像素限定层; 形成在所述暴露的第一电极上的发射层; 以及形成在衬底上的发射层上的第二电极。 因此，可以通过在薄膜晶体管和第一电极之间形成滤光器层而没有钝化层来简化工艺，通过增加滤色器层粘附时上下基板之间的取向余量来提高工艺稳定性， 并促进顶部和底部的排放。

公开(公告)号：US06628362B2

公开(公告)日：2003-09-30

申请号：US09781189

申请日：2001-02-13

申请人： Seong Moh Seo ,  Hyun Ho Shin ,  Young Jin Oh ,  Hyun Chang Lee ,  Chang Yeon Kim

发明人： Seong Moh Seo ,  Hyun Ho Shin ,  Young Jin Oh ,  Hyun Chang Lee ,  Chang Yeon Kim

IPC分类号： G02F11343

CPC分类号： G02F1/136213 ,  G02F1/134363

摘要： An in-plane switching mode liquid crystal display device comprises first and second substrates, a plurality of gate and data bus lines defining pixel regions and arranged on the first substrate, a plurality of data electrodes on same plane of the data bus lines these some parts are overlapped with adjacent gate bus line, a passivation layer on the data electrodes, a plurality of common electrodes on the passivation layer these some parts are overlapped with adjacent data electrodes, and a liquid crystal layer between the first and second substrates.

摘要翻译： 面内切换模式液晶显示装置包括第一和第二基板，多个限定像素区域的栅极和数据总线线路，并布置在第一基板上，多个数据电极在数据总线的同一平面上，这些部分 与相邻栅极总线重叠，数据电极上的钝化层，钝化层上的多个公共电极，这些一些部分与相邻的数据电极重叠，以及在第一和第二基板之间的液晶层。

公开(公告)号：US06529256B1

公开(公告)日：2003-03-04

申请号：US09645332

申请日：2000-08-25

申请人： Seong Moh Seo

发明人： Seong Moh Seo

IPC分类号： G02F11343

CPC分类号： G02F1/134363 ,  G02F2201/40 ,  G02F2203/01

摘要： An in-plane switching mode liquid crystal display device includes first and second substrates. A plurality of gate and data bus lines define pixel regions and arranged on the first substrate. A plurality of thin film transistors are adjacent respective cross points of the gate and data bus lines. A plurality of gate electrodes are connected to said gate bus lines. A gate insulator is on the gate electrodes and a first metal layer includes a plurality of first electrodes on the gate insulator. A passivation layer is on the first metal layer. A transparent second metal layer includes a plurality of second electrodes on the passivation layer, the first and second electrodes applying plane electric fields.

公开(公告)号：US5827760A

公开(公告)日：1998-10-27

申请号：US798826

申请日：1997-02-12

申请人： Seong Moh Seo

发明人： Seong Moh Seo

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/45 ,  H01L21/223

CPC分类号： H01L29/66765 ,  H01L29/458

摘要： A thin film transistor is fabricated by introducing a dopant into an indium tin oxide layer or a gate insulating layer by an ion shower doping technique. An a-Si semiconductor layer is then deposited on the surface of the substrate and subjected to a single exposure of laser light. The laser exposure or annealing diffuses dopant into the semiconductor layer and activates the dopant to form an ohmic layer of n-type or p-type conductivity polysilicon, and an intrinsic polysilicon layer. A metal layer and an indium tin oxide layer are formed to the side of a gate electrode to maintain an electrical connection even if a break is formed in the data bus line.

摘要翻译： 通过离子喷淋掺杂技术将掺杂剂引入铟锡氧化物层或栅极绝缘层来制造薄膜晶体管。 然后将a-Si半导体层沉积在衬底的表面上并进行单次曝光的激光。 激光曝光或退火将掺杂剂扩散到半导体层中并激活掺杂剂以形成n型或p型导电多晶硅和本征多晶硅层的欧姆层。 即使在数据总线上形成断路，也在栅极侧形成金属层和氧化铟锡层，以保持电连接。

公开(公告)号：US08455874B2

公开(公告)日：2013-06-04

申请号：US13229272

申请日：2011-09-09

申请人： Hee-Dong Choi ,  Seong-Moh Seo

发明人： Hee-Dong Choi ,  Seong-Moh Seo

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.

摘要翻译： 一种制造显示装置的方法包括：在基板上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成有源层，由外部多晶硅制成的栅电极，由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。