公开(公告)号：US20110203735A1

公开(公告)日：2011-08-25

申请号：US13032861

申请日：2011-02-23

申请人： Seongsul SEO ,  Sungyong KO ,  Yunsook CHAE ,  Hwankook CHAE ,  Keehyun KIM ,  Weonmook LEE

发明人： Seongsul SEO ,  Sungyong KO ,  Yunsook CHAE ,  Hwankook CHAE ,  Keehyun KIM ,  Weonmook LEE

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part.

摘要翻译： 提供了一种设置在等离子体蚀刻设备中的气体注入系统。 该系统包括用于在室的顶部供应反应气体的顶部气体喷射器和用于从腔室的侧表面或后侧气体喷射器供应调谐气体的侧气体喷射器，其向下喷射调节气体， 的晶片。 侧气体喷射器或背侧气体喷射器形成径向形状的多个射流，并且同时将射流相对于晶片的边缘部分安装，使得调谐气体相邻地喷射到晶片的边缘部分，从而能够 容易地控制边缘部分的蚀刻速率或CD均匀性或轮廓。