公开(公告)号：US20110203735A1

公开(公告)日：2011-08-25

申请号：US13032861

申请日：2011-02-23

申请人： Seongsul SEO ,  Sungyong KO ,  Yunsook CHAE ,  Hwankook CHAE ,  Keehyun KIM ,  Weonmook LEE

发明人： Seongsul SEO ,  Sungyong KO ,  Yunsook CHAE ,  Hwankook CHAE ,  Keehyun KIM ,  Weonmook LEE

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part.

摘要翻译： 提供了一种设置在等离子体蚀刻设备中的气体注入系统。 该系统包括用于在室的顶部供应反应气体的顶部气体喷射器和用于从腔室的侧表面或后侧气体喷射器供应调谐气体的侧气体喷射器，其向下喷射调节气体， 的晶片。 侧气体喷射器或背侧气体喷射器形成径向形状的多个射流，并且同时将射流相对于晶片的边缘部分安装，使得调谐气体相邻地喷射到晶片的边缘部分，从而能够 容易地控制边缘部分的蚀刻速率或CD均匀性或轮廓。

公开(公告)号：US20110154843A1

公开(公告)日：2011-06-30

申请号：US12959564

申请日：2010-12-03

申请人： Sungyong KO ,  Minshik KIM ,  Kwangmin LEE ,  Hwankook CHAE ,  Dongseok LEE ,  Keehyun KIM ,  Weonmook LEE

发明人： Sungyong KO ,  Minshik KIM ,  Kwangmin LEE ,  Hwankook CHAE ,  Dongseok LEE ,  Keehyun KIM ,  Weonmook LEE

IPC分类号： F25D31/00

CPC分类号： H01L21/6831

摘要： An apparatus for controlling the temperature of an electrostatic chuck is provided. The apparatus includes an electrostatic chuck including, as a fluid channel part for circulating a refrigerant, a first fluid channel formed in an outer circumference region of the internal and a second fluid channel formed in the whole internal region, and one or more chillers for supplying refrigerant controlled to different temperatures through the first fluid channel or the second fluid channel. The first and second fluid channels are formed in two up/down stages within the electrostatic chuck, thereby being independently capable of the temperatures of a center part and edge part of a wafer.

摘要翻译： 提供一种用于控制静电卡盘的温度的装置。 该装置包括静电卡盘，该静电卡盘包括作为用于循环制冷剂的流体通道部分，形成在内部的外周区域中形成的第一流体通道和形成在整个内部区域中的第二流体通道，以及一个或多个用于供给的冷却器 制冷剂通过第一流体通道或第二流体通道控制到不同的温度。 第一和第二流体通道形成在静电卡盘内的两个上/下级中，从而独立地能够承受晶片的中心部分和边缘部分的温度。

公开(公告)号：US20110155694A1

公开(公告)日：2011-06-30

申请号：US12949139

申请日：2010-11-18

申请人： Hyeokjin JANG ,  Minshik KIM ,  Kwangmin LEE ,  Sungyong KO ,  Hwankook CHAE ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

发明人： Hyeokjin JANG ,  Minshik KIM ,  Kwangmin LEE ,  Sungyong KO ,  Hwankook CHAE ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01J37/32266

摘要： A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.

摘要翻译： 提供等离子体反应器和使用其的蚀刻方法。 该方法包括：改变连接到RF源电源单元的感应线圈的数量或排列结构的第一改变步骤，施加RF源功率并产生高密度等离子体的步骤;蚀刻第一蚀刻靶 工件的层，停止施加RF源功率的第一停止步骤，改变感应线圈的数量或排列结构的第二改变步骤，向相应的感应线圈施加RF源功率并产生低密度等离子体的步骤， 蚀刻工件的第二蚀刻靶层的第二蚀刻步骤以及停止施加RF源功率的第二停止步骤。

公开(公告)号：US20100110605A1

公开(公告)日：2010-05-06

申请号：US12580029

申请日：2009-10-15

申请人： Weonmook LEE ,  Hwankook CHAE ,  Kunjoo PARK ,  Sungyong KO ,  Minshik KIM ,  Keehyun KIM

发明人： Weonmook LEE ,  Hwankook CHAE ,  Kunjoo PARK ,  Sungyong KO ,  Minshik KIM ,  Keehyun KIM

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01J37/32623 ,  H01J37/32642

摘要： Provided is an electrostatic chuck assembly for a plasma reactor. The assembly includes an electrostatic chuck, an electrostatic chuck cover ring, and a cathode assembly cover ring. The electrostatic chuck includes a body part and a protrusion part. The body part has a disk shape of a first diameter. The protrusion part is formed integrally with the body part and protrudes from the body part, and has a disk shape of a second diameter less than the first diameter. The electrostatic chuck cover ring is disposed to surround an outer circumference of the protrusion part. The cathode assembly cover ring is disposed at an upper part of the cathode assembly to surround an outer circumference of the electrostatic chuck cover ring and an outer circumference of the body part.

摘要翻译： 提供了一种用于等离子体反应器的静电卡盘组件。 组件包括静电卡盘，静电卡盘盖环和阴极组件盖环。 静电卡盘包括主体部分和突出部分。 主体部分具有第一直径的盘形。 突起部与主体部一体地形成，并且从主体部突出，并且具有比第一直径小的第二直径的盘状。 静电吸盘盖环设置成围绕突出部的外周。 阴极组件盖环设置在阴极组件的上部，以围绕静电卡盘盖环的外周和主体部分的外周。

公开(公告)号：US20090280040A1

公开(公告)日：2009-11-12

申请号：US12416658

申请日：2009-04-01

申请人： Kunjoo PARK ,  Hwankook CHAE ,  Sungyong KO ,  Keehyun KIM ,  Weonmook LEE

发明人： Kunjoo PARK ,  Hwankook CHAE ,  Sungyong KO ,  Keehyun KIM ,  Weonmook LEE

IPC分类号： B01J19/08 ,  H01L21/306

CPC分类号： H01J37/32633 ,  H01J37/32623

摘要： A plasma chemical reactor is provided. The reactor includes a chamber, a cathode assembly, and a baffle plate. The chamber forms a plasma reaction space. The cathode assembly includes a cathode support shaft and a substrate support. The cathode support shaft is coupled at one side to a wall surface of the chamber. The substrate support is coupled to the other side of the cathode support shaft and supports the substrate. The baffle plate is out inserted and coupled to the substrate support, and has a plurality of vents arranged to be spaced apart and through formed such that reaction gas can pass through, and the vents asymmetrically arranged and formed to get a vent area smaller at an opposite side than a top side of the cathode support shaft.

摘要翻译： 提供等离子体化学反应器。 反应器包括室，阴极组件和挡板。 室形成等离子体反应空间。 阴极组件包括阴极支撑轴和衬底支撑件。 阴极支撑轴在一侧连接到腔室的壁表面。 衬底支撑件耦合到阴极支撑轴的另一侧并支撑衬底。 挡板被插入并联接到基板支撑件，并且具有多个通风口，其布置成间隔开并形成为使得反应气体可以通过，并且通风口不对称地布置和形成，以使排气面积在 与阴极支撑轴的顶侧相对。

公开(公告)号：US20090129997A1

公开(公告)日：2009-05-21

申请号：US12254686

申请日：2008-10-20

申请人： Hwankook CHAE ,  Dongseok LEE ,  Heeseok MOON ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

发明人： Hwankook CHAE ,  Dongseok LEE ,  Heeseok MOON ,  Kunjoo PARK ,  Keehyun KIM ,  Weonmook LEE

IPC分类号： H05H1/48

CPC分类号： C23C16/4583 ,  C23C16/505 ,  H01J37/32009 ,  H01J37/32082

摘要： A plasma chemical reactor includes a chamber for providing a plasma reaction space, and a cathode assembly coupled at one side to a wall surface of the chamber and supporting a substrate at the other side such that the substrate is positioned at a center inside the chamber, and installed to enable height adjustment such that the substrate can maintain a horizontal state.

摘要翻译： 等离子体化学反应器包括用于提供等离子体反应空间的室，以及在一侧耦合到室的壁表面并在另一侧支撑衬底的阴极组件，使得衬底位于室内的中心， 并安装成能够进行高度调节，使得基板可以保持水平状态。

公开(公告)号：US20110049111A1

公开(公告)日：2011-03-03

申请号：US12854409

申请日：2010-08-11

申请人： Sungyong KO ,  Minshik KIM ,  Byoungil LEE ,  Heeseok MOON ,  Kwangmin LEE ,  Keehyun KIM ,  Weonmook LEE

发明人： Sungyong KO ,  Minshik KIM ,  Byoungil LEE ,  Heeseok MOON ,  Kwangmin LEE ,  Keehyun KIM ,  Weonmook LEE

IPC分类号： B23K10/00

CPC分类号： G05D7/0641 ,  H01J37/32449

摘要： A control system for etching gas is provided. The control system includes a mass flow control unit, a flow rate control unit, and a tuning gas control unit. The mass flow control unit controls a mass flow of an etching gas input to a chamber. The flow rate control unit distributes the etching gas to an upper gas injector and a side gas injector connected with the mass flow control unit and installed in the chamber. The tuning gas control unit distributes and supplies a supplementary gas and tuning gas controlling an ion density and distribution of plasma within the chamber, to the mass flow control unit and the flow rate control unit.

摘要翻译： 提供了一种用于蚀刻气体的控制系统。 控制系统包括质量流量控制单元，流量控制单元和调谐气体控制单元。 质量流量控制单元控制输入到室的蚀刻气体的质量流量。 流量控制单元将蚀刻气体分配到与质量流量控制单元连接并安装在室中的上部气体喷射器和侧面气体喷射器。 调谐气体控制单元向质量流量控制单元和流量控制单元分配并提供辅助气体和调节气体，该气体和调节气体控制室内的离子密度和等离子体的分布。