公开(公告)号：US20110097256A1

公开(公告)日：2011-04-28

申请号：US12999570

申请日：2009-05-27

申请人： Sergio Pizzini

发明人： Sergio Pizzini

IPC分类号： C01B33/021

CPC分类号： C01B33/025 ,  C01B33/037 ,  C30B11/00 ,  C30B11/003 ,  C30B29/06

摘要： A method for preparing silicon for photovoltaic use starting from metallurgical-grade silicon, comprising the following steps, performed by means of devices made of materials suitable to prevent silicon contamination: providing a silica powder and a carbon black having a reduced content of boron, phosphorus and metallic impurities and a binding agent; preparing a mixture of silica powder, carbon black and binding agent and preparing pellets with the mixture; subjecting the pellets to a first thermal treatment; subjecting the heat-treated pellets to carbon reduction, so as to obtain silicon in the molten state; subjecting the silicon in the molten state to a first purification; subjecting to directional solidification the silicon in the molten state in a directional solidification furnace, so as to obtain silicon for photovoltaic use.

摘要翻译： 一种从冶金级硅开始制备用于光伏使用的硅的方法，包括以下步骤：通过适合于防止硅污染的材料制成的器件进行：提供具有降低的硼含量的二氧化硅粉末和炭黑 和金属杂质和粘合剂; 制备二氧化硅粉末，炭黑和粘合剂的混合物，并用该混合物制备颗粒; 使颗粒经受第一次热处理; 对经热处理的颗粒进行碳还原，以获得处于熔融状态的硅; 使熔融状态的硅经受第一次净化; 在定向凝固炉中对熔融状态的硅进行定向凝固，以获得用于光伏使用的硅。

公开(公告)号：US5540947A

公开(公告)日：1996-07-30

申请号：US329218

申请日：1994-10-26

申请人： Romano Morlotti ,  Sergio Pizzini ,  Laura Oggioni

发明人： Romano Morlotti ,  Sergio Pizzini ,  Laura Oggioni

IPC分类号： C09K11/08 ,  C09K11/77 ,  C09K11/79 ,  G03C5/17 ,  G21K4/00 ,  B05D5/06

CPC分类号： C09K11/7774 ,  G21K4/00 ,  G21K2004/06

摘要： An X-ray intensifying screen comprises a support and a layer containing a direct emission phosphor formed without a binder. The preferred direct emission phosphor is a rare earth silicate phosphor. Said X-ray intensifying screen is useful in the methods for recording and reproducing high energy radiation images. A process for the preparation of the binderless phosphor layer by reactive spray pyrolysis is also disclosed.

摘要翻译： X射线增强屏幕包括支撑体和包含没有粘合剂形成的直接发射荧光体的层。 优选的直接发射荧光体是稀土硅酸盐荧光体。 所述X射线增强屏幕在用于记录和再现高能辐射图像的方法中是有用的。 还公开了通过反应性喷雾热解制备无粘合剂磷光体层的方法。

公开(公告)号：US20110104036A1

公开(公告)日：2011-05-05

申请号：US12999511

申请日：2009-05-27

申请人： Sergio Pizzini

发明人： Sergio Pizzini

IPC分类号： C01B33/037 ,  B01J19/00

CPC分类号： C30B11/002 ,  C01B33/037 ,  C30B11/003 ,  C30B11/007 ,  C30B28/06 ,  C30B29/06

摘要： A method and an apparatus for purification of metallurgical grade silicon by directional solidification and for obtaining silicon ingots for photovoltaic use. The method comprises a preheating step, up to a temperature that is higher than the melting point of silicon, of a quartz crucible (18) that is accommodated in a containment enclosure (19) arranged inside a chamber (4) of a furnace. The chamber (4) of the furnace is delimited by a covering structure (3) and by a footing (2), which can move with respect to each other, or vice versa, toward or away from each other along a vertical direction respectively for opening and closing the chamber (4). Heating occurs by way of heating means (10) of the electric type, which are associated with the walls of the covering structure (3). The metallurgical grade silicon obtained at the end of a carbon reduction cycle in a carbon reduction furnace, from which it exits in the molten state, is transferred in the molten state directly into the quartz crucible (18) thus preheated inside the furnace chamber, which is closed and inside which an atmosphere of inert gas at a pressure that is higher than the atmospheric pressure is generated. Transfer of the silicon in the molten state occurs through a barrier of at least one inert gas that is generated proximate to at least one opening (13) formed in the top (7b) of the covering structure (3). The method then comprises a step for directional solidification of the silicon in the molten state, by removing heat from the bottom of the quartz crucible and by means of the selective control of the heating means of the electric type and the modulation of the power delivered by them, until the silicon solidifies completely in an ingot. During the solidification step, the furnace chamber is closed and an atmosphere of an inert gas at a pressure that is higher than atmospheric pressure is maintained inside it. At the end of solidification, the quartz crucible (18) accommodated in the containment enclosure (19) and containing the ingot thus obtained is extracted from the furnace chamber, which is opened by removing the covering structure (3) from the footing (2).

公开(公告)号：US4241037A

公开(公告)日：1980-12-23

申请号：US91750

申请日：1979-11-06

申请人： Luigi Pelosini ,  Alessandro Parisi ,  Sergio Pizzini

发明人： Luigi Pelosini ,  Alessandro Parisi ,  Sergio Pizzini

IPC分类号： C01B33/02 ,  C01B33/037

CPC分类号： C01B33/037

摘要： A process is disclosed for purifying silicon wherein silicon in the molten state is reacted with barium carbonate and/or oxide and/or hydroxide and then, after cooling and crushing, leached with one or more dilute inorganic acids. Preferably an oxidizing gas such as oxygen or water vapor is blown into the molten mass during the reaction, which is conducted at a temperature in the range of from 1550.degree. to 2000.degree. C. The inorganic acid may be for example hydrochloric acid, hydrofluoric acid, nitric acid, sulphuric acid, or mixtures thereof.

摘要翻译： 公开了一种用于纯化硅的方法，其中熔融状态的硅与碳酸钡和/或氧化物和/或氢氧化物反应，然后在冷却和破碎之后，用一种或多种稀无机酸浸出。 优选在反应期间将氧化性气体例如氧气或水蒸气吹入熔融物质，其在1550℃至2000℃的温度下进行。无机酸可以是例如盐酸，氢氟酸 ，硝酸，硫酸或其混合物。