公开(公告)号：US08450170B2

公开(公告)日：2013-05-28

申请号：US13094229

申请日：2011-04-26

申请人： Ki-Yeol Byun ,  Chan-Kwang Park ,  Jae-Hwan Moon ,  Tae-Wan Lim ,  Seung-Ah Kim

发明人： Ki-Yeol Byun ,  Chan-Kwang Park ,  Jae-Hwan Moon ,  Tae-Wan Lim ,  Seung-Ah Kim

IPC分类号： H01L21/8238

CPC分类号： H01L27/115 ,  H01L21/76232 ,  H01L27/11521

摘要： Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.

摘要翻译： 提供半导体器件和形成半导体器件的方法。 半导体器件包括其边缘是弯曲的有源区域。 半导体器件包括在有源区上的栅极绝缘层，浮栅，栅极层间介质层和控制栅极线。 半导体器件包括在相邻浮动栅极之间具有凹形顶表面的氧化物图案。 控制栅极可以通过氧化物图案与有源区足够间隔开。 该方法可以提供一种半导体器件，其包括再氧化工艺，具有弯曲边缘的有源区和具有弯曲凹形形状的顶表面的氧化物图案。

公开(公告)号：US20090102009A1

公开(公告)日：2009-04-23

申请号：US12286760

申请日：2008-10-02

申请人： Ki-Yeol Byun ,  Chan-Kwang Park ,  Jae-Hwan Moon ,  Tae-Wan Lim ,  Seung-Ah Kim

发明人： Ki-Yeol Byun ,  Chan-Kwang Park ,  Jae-Hwan Moon ,  Tae-Wan Lim ,  Seung-Ah Kim

IPC分类号： H01L21/762 ,  H01L29/06

CPC分类号： H01L27/115 ,  H01L21/76232 ,  H01L27/11521

摘要： Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.

摘要翻译： 提供半导体器件和形成半导体器件的方法。 半导体器件包括其边缘是弯曲的有源区域。 半导体器件包括在有源区上的栅极绝缘层，浮栅，栅极层间介质层和控制栅极线。 半导体器件包括在相邻浮动栅极之间具有凹形顶表面的氧化物图案。 控制栅极可以通过氧化物图案与有源区足够间隔开。 该方法可以提供一种半导体器件，其包括再氧化工艺，具有弯曲边缘的有源区和具有弯曲凹形形状的顶表面的氧化物图案。

公开(公告)号：US20110201189A1

公开(公告)日：2011-08-18

申请号：US13094229

申请日：2011-04-26

申请人： Ki-Yeol Byun ,  Chan-Kwang Park ,  Jae-Hwan Moon ,  Tae-Wan Lim ,  Seung-Ah Kim

发明人： Ki-Yeol Byun ,  Chan-Kwang Park ,  Jae-Hwan Moon ,  Tae-Wan Lim ,  Seung-Ah Kim

IPC分类号： H01L21/28

CPC分类号： H01L27/115 ,  H01L21/76232 ,  H01L27/11521

摘要： Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.

摘要翻译： 提供半导体器件和形成半导体器件的方法。 半导体器件包括其边缘是弯曲的有源区域。 半导体器件包括在有源区上的栅极绝缘层，浮栅，栅极层间介质层和控制栅极线。 半导体器件包括在相邻浮动栅极之间具有凹形顶表面的氧化物图案。 控制栅极可以通过氧化物图案与有源区足够间隔开。 该方法可以提供一种半导体器件，其包括再氧化工艺，具有弯曲边缘的有源区和具有弯曲凹形形状的顶表面的氧化物图案。

公开(公告)号：US07952134B2

公开(公告)日：2011-05-31

申请号：US12286760

申请日：2008-10-02

申请人： Ki-Yeol Byun ,  Chan-Kwang Park ,  Jae-Hwan Moon ,  Tae-Wan Lim ,  Seung-Ah Kim

发明人： Ki-Yeol Byun ,  Chan-Kwang Park ,  Jae-Hwan Moon ,  Tae-Wan Lim ,  Seung-Ah Kim

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  H01L21/76232 ,  H01L27/11521

摘要： Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.

摘要翻译： 提供半导体器件和形成半导体器件的方法。 半导体器件包括其边缘是弯曲的有源区域。 半导体器件包括在有源区上的栅极绝缘层，浮栅，栅极层间介质层和控制栅极线。 半导体器件包括在相邻浮动栅极之间具有凹形顶表面的氧化物图案。 控制栅极可以通过氧化物图案与有源区足够间隔开。 该方法可以提供一种半导体器件，其包括再氧化工艺，具有弯曲边缘的有源区和具有弯曲凹形形状的顶表面的氧化物图案。