公开(公告)号：US08012403B2

公开(公告)日：2011-09-06

申请号：US10489924

申请日：2001-09-14

申请人： Jerome C. Birnbaum ,  Glen E. Fryxell ,  Shari Li Xiaohong ,  Christopher A. Coyle ,  Glen C. Dunham ,  Suresh Baskaran ,  Ralph E. Williford

发明人： Jerome C. Birnbaum ,  Glen E. Fryxell ,  Shari Li Xiaohong ,  Christopher A. Coyle ,  Glen C. Dunham ,  Suresh Baskaran ,  Ralph E. Williford

IPC分类号： B28B1/30

CPC分类号： C04B35/62655 ,  B01D67/0048 ,  B01D67/0058 ,  B01D67/0088 ,  B01D67/0093 ,  B01D71/024 ,  B01D2323/18 ,  B01D2323/30 ,  C04B20/0056 ,  C04B35/14 ,  C04B35/16 ,  C04B35/624 ,  C04B38/0022 ,  C04B2111/00482 ,  C04B2111/1025 ,  C04B2235/72 ,  H01L21/31695 ,  C04B38/0051 ,  C04B38/009 ,  C04B38/02 ,  C04B38/10 ,  C04B14/4631

摘要： Porous ceramic and hybrid ceramic films are useful as low dielectric constant interlayers in semiconductor interconnects. (Hybrid ceramic films are defined as films that contain organic and ceramic molecular components in the structure, as, for example, organosilicates). This invention describes the usefulness of humidity treatments (using specific temperature/humidity treatments as illustrative examples) in increasing mechanical integrity of porous dielectric films with minimal detrimental effect on film porosity or dielectric constant and with no adverse impact on film quality. The efficacy of such treatments is illustrated using surfactant-templated mesoporous silicate films as an example. This invention also describes a specific family of additives to be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality and lower dielectric constants with the required mechanical integrity. The efficacy of such additives is illustrated using surfactant-templated mesoporous silicate films as a model example. The invention should be broadly applicable to any cross-linked ceramic or hybrid ceramic films (including silicate and organosilicate films, and especially highly porous forms of the films for low-dielectric constant applications). The invention has been found to be particularly effective with surfactant-templated silicate films with nanometer-scale porosity. The invention in either embodiment should also be applicable to evaporation-induced formation of other cross-linked shapes such as fibers and powders.

摘要翻译： 多孔陶瓷和混合陶瓷膜可用作半导体互连中的低介电常数中间层。 （混合陶瓷膜被定义为在结构中含有有机和陶瓷分子组分的膜，例如有机硅酸盐）。 本发明描述了在增加多孔电介质膜的机械完整性的情况下，湿度处理（使用特定温度/湿度处理作为说明性实例）的有用性，对膜孔隙率或介电常数具有最小的有害影响，并且对膜质量没有不利影响。 以表面活性剂模板的介孔硅酸盐膜为例说明了这种处理的效果。 本发明还描述了与用于这种介电膜的高纯度无碱金属的陶瓷和混合前体一起使用的特定的添加剂族，其将能够以所需的机械完整性更好地控制膜孔隙率和质量以及更低的介电常数。 作为示例，使用表面活性剂模板的中孔硅酸盐膜来说明这些添加剂的功效。 本发明应广泛适用于任何交联的陶瓷或混合陶瓷膜（包括硅酸盐和有机硅酸盐膜，特别是用于低介电常数应用的膜的高度多孔形式）。 已经发现本发明对于具有纳米级孔隙率的表面活性剂模板化硅酸盐膜是特别有效的。 在任一实施方案中的本发明也应适用于其它交联形状如纤维和粉末的蒸发诱导形成。