Single gate oxide level shifter
    1.
    发明申请

    公开(公告)号:US20080007301A1

    公开(公告)日:2008-01-10

    申请号:US11483319

    申请日:2006-07-07

    IPC分类号: H03K19/0175

    CPC分类号: H03K19/018528

    摘要: A level shifter includes a first inverter coupled between the second voltage and the first voltage, and a second inverter coupled between the second voltage and the first voltage, the second inverter being cross-coupled with the first inverter for latching a value therein. A first switch module is coupled between a first data storage node of the first and second inverters and an input signal swinging between the first voltage and a ground voltage. A second switch module is coupled between a second data storage node of the first and second inverters and an inverted input signal swinging between the ground voltage and the first voltage. The first and second inverters and the first and second switch modules include one or more MOS transistors with gate oxide layers of the same thickness.