Abstract:
A method for passivating tantalum metal surface is provided, the method comprises cooling tantalum metal to or below 32° C. and/or passivating tantalum metal surface by oxygen-containing gas with a temperature of 0° C. or below. Also provided is an apparatus for passivating tantalum metal surface for applying the method, comprising a heat treatment furnace, an argon forced-cooling device and/or a device for cooling oxygen-containing gas.