公开(公告)号：US20100301236A1

公开(公告)日：2010-12-02

申请号：US12472316

申请日：2009-05-26

Applicant: Shih-Yung Shieh ,  Cheng-Hui Shen

Inventor： Shih-Yung Shieh ,  Cheng-Hui Shen

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01L21/265

Abstract: The present invention discloses a low temperature ion implantation by performing a heating process after the end of an implanting process and before the wafer is moved into the external environment. This invention actively raises wafer temperature at a time no later than implementation of the vacuum venting process, such that the condensed moisture induced by the temperature difference between a vacuum environment inside ion implanter and an external environment outside ion implanter is effectively minimized. The wafer can be heated at a loadlock, a robot for transferring wafer and/or an implantation chamber. The wafer can be heated by a gas, a liquid, a light and/or a heater embedded in a holder for holding the wafer.

Abstract translation: 本发明公开了一种低温离子注入，通过在植入过程结束之后并且在晶片移动到外部环境中之前执行加热过程。 本发明在不迟于实施真空排气过程的时候主动地提高晶片温度，使得离子注入机内的真空环境和离子注入机外部的外部环境之间的温度差引起的冷凝水分被有效地最小化。 可以在负载锁上加热晶片，用于传送晶片和/或注入室的机器人。 可以通过嵌入在用于保持晶片的保持器中的气体，液体，光和/或加热器来加热晶片。