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    Transistor, organic semiconductor device, and method for manufacture of the transistor or device
    2.
    发明授权
    Transistor, organic semiconductor device, and method for manufacture of the transistor or device 有权
    晶体管，有机半导体器件以及晶体管或器件的制造方法

    公开(公告)号：US07977149B2

    公开(公告)日：2011-07-12

    申请号：US12065007

    申请日：2006-08-30

    申请人： Shinichi Yamate

    发明人： Shinichi Yamate

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0003 ,  H01L51/0024 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0545

    摘要： The invention provides a process for production of a transistor and an organic semiconductor element which allows satisfactory formation of active layers on desired surfaces, even if the active layers are organic semiconductor compound-containing active layers imparted with prescribed properties beforehand. A preferred mode of the process for production of a transistor is a process for production of a transistor provided with a source electrode and drain electrode, an active layer containing an organic semiconductor compound as a current channel between the electrodes, a gate electrode that controls the current flowing through the current channel and an insulating layer disposed between the active layer and gate electrode, wherein the process includes a pasting step in which a working liquid is situated between the active layer and insulating layer and the active layer and insulating layer are attached together.

    摘要翻译： 本发明提供一种用于制造晶体管和有机半导体元件的方法，即使活性层是预先赋予规定特性的含有有机半导体化合物的活性层，也能够在期望的表面上令人满意地形成有源层。 用于制造晶体管的方法的优选方式是制造具有源电极和漏电极的晶体管的工艺，包含有机半导体化合物作为电极之间的电流通道的有源层，控制 流过电流通道的电流和设置在有源层和栅电极之间的绝缘层，其中该工艺包括粘合步骤，其中工作液体位于有源层和绝缘层之间，并且有源层和绝缘层被附接在一起 。

    TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE COMPRISING SUCH TRANSISTOR
    4.
    发明申请
    TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE COMPRISING SUCH TRANSISTOR 失效
    晶体管，其制造方法以及包含这种晶体管的半导体器件

    公开(公告)号：US20090267055A1

    公开(公告)日：2009-10-29

    申请号：US12065004

    申请日：2006-08-30

    申请人： Shinichi Yamate

    发明人： Shinichi Yamate

    IPC分类号： H01L51/10 ,  H01L51/40 ,  H01L21/336 ,  H01L29/78

    CPC分类号： H01L51/0024 ,  H01L51/0012 ,  H01L51/0026 ,  H01L51/003 ,  H01L51/0036 ,  H01L51/0504 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/057 ,  H01L51/105

    摘要： The invention provides a process for production of a transistor that can form an oriented active layer by a convenient method while yielding a transistor with excellent carrier mobility. The process according to the invention is a process for production of a transistor with an active layer composed of an organic semiconductor compound-containing semiconductor film, the process comprising a step of stretching the semiconductor film and a step of pasting the semiconductor film onto the side on which the active layer is to be formed while heating and/or pressing, to obtain the active layer.

    摘要翻译： 本发明提供了一种制造晶体管的方法，该晶体管可以通过方便的方法形成定向的有源层，同时产生具有优异载流子迁移率的晶体管。 根据本发明的方法是一种制备具有由含有机半导体化合物的半导体膜构成的有源层的晶体管的方法，该方法包括拉伸半导体膜的步骤和将半导体膜粘贴到侧面上的步骤 在加热和/或加压的同时在其上形成有源层，以获得活性层。

    Transistor, method for manufacturing same, and semiconductor device comprising such transistor
    5.
    发明授权
    Transistor, method for manufacturing same, and semiconductor device comprising such transistor 失效
    晶体管及其制造方法以及包含这种晶体管的半导体器件

    公开(公告)号：US08247264B2

    公开(公告)日：2012-08-21

    申请号：US12065004

    申请日：2006-08-30

    申请人： Shinichi Yamate

    发明人： Shinichi Yamate

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0024 ,  H01L51/0012 ,  H01L51/0026 ,  H01L51/003 ,  H01L51/0036 ,  H01L51/0504 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/057 ,  H01L51/105

    摘要： The invention provides a process for production of a transistor that can form an oriented active layer by a convenient method while yielding a transistor with excellent carrier mobility. The process according to the invention is a process for production of a transistor with an active layer composed of an organic semiconductor compound-containing semiconductor film, the process comprising a step of stretching the semiconductor film and a step of pasting the semiconductor film onto the side on which the active layer is to be formed while heating and/or pressing, to obtain the active layer.

    摘要翻译： 本发明提供了一种制造晶体管的方法，该晶体管可以通过方便的方法形成定向的有源层，同时产生具有优异载流子迁移率的晶体管。 根据本发明的方法是一种制备具有由含有机半导体化合物的半导体膜构成的有源层的晶体管的方法，该方法包括拉伸半导体膜的步骤和将半导体膜粘贴到侧面上的步骤 在加热和/或加压的同时在其上形成有源层，以获得活性层。

    PROCESS FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR ELEMENT, AND ORGANIC SEMICONDUCTOR DEVICE
    6.
    发明申请
    PROCESS FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR ELEMENT, AND ORGANIC SEMICONDUCTOR DEVICE 审中-公开
    生产有机半导体元件，有机半导体元件和有机半导体器件的工艺

    公开(公告)号：US20100207111A1

    公开(公告)日：2010-08-19

    申请号：US12668364

    申请日：2008-07-07

    申请人： Shinichi Yamate

    发明人： Shinichi Yamate

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0002 ,  H01L51/0012 ,  H01L51/0013 ,  H01L51/0018 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/057

    摘要： An object of the present invention is to provide a method for producing an organic semiconductor element allowing depression of electrical properties of active layer to be prevented, moreover allowing an active layer patterned to have a satisfactory pattern shape to be formed. In order to achieve the above object, the method for producing an organic semiconductor element of the present invention has the step of laminating a layered body resulting from lamination of a support film and the active layer to an element substrate on which the active layer will be disposed so that the active layer of the layered body will be in contact with the element substrate, the step of forming a mask having a prescribed pattern shape on the support film's surface located on the side opposite to the active layer, and the step of patterning the active layer by removing the layered body located in a region where the mask has not been formed.

    摘要翻译： 本发明的目的是提供一种制造有机半导体元件的方法，该有机半导体元件允许抑制有源层的电性能被阻止，此外允许图案化的有源层具有令人满意的图案形状。 为了实现上述目的，本发明的有机半导体元件的制造方法具有将由支撑膜和有源层叠层而得到的层叠体层叠到活性层为有机层的元件基板上的工序 所述层叠体的有源层与元件基板接触，在与所述有源层相反的一侧的所述支撑膜的表面上形成具有规定图案形状的掩模的工序， 通过去除位于未形成掩模的区域中的层状体的有源层。

    TRANSISTOR, ORGANIC SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURE OF THE TRANSISTOR OR DEVICE
    7.
    发明申请
    TRANSISTOR, ORGANIC SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURE OF THE TRANSISTOR OR DEVICE 失效
    晶体管，有机半导体器件以及制造晶体管或器件的方法

    公开(公告)号：US20090278116A1

    公开(公告)日：2009-11-12

    申请号：US12065007

    申请日：2001-08-30

    申请人： Shinichi Yamate

    发明人： Shinichi Yamate

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0003 ,  H01L51/0024 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0545

    摘要： The invention provides a process for production of a transistor and an organic semiconductor element which allows satisfactory formation of active layers on desired surfaces, even if the active layers are organic semiconductor compound-containing active layers imparted with prescribed properties beforehand. A preferred mode of the process for production of a transistor is a process for production of a transistor provided with a source electrode and drain electrode, an active layer containing an organic semiconductor compound as a current channel between the electrodes, a gate electrode that controls the current flowing through the current channel and an insulating layer disposed between the active layer and gate electrode, wherein the process includes a pasting step in which a working liquid is situated between the active layer and insulating layer and the active layer and insulating layer are attached together.

    摘要翻译： 本发明提供一种用于制造晶体管和有机半导体元件的方法，即使活性层是预先赋予规定特性的含有有机半导体化合物的活性层，也能够在期望的表面上令人满意地形成有源层。 用于制造晶体管的方法的优选方式是制造具有源电极和漏电极的晶体管的工艺，包含有机半导体化合物作为电极之间的电流通道的有源层，控制 流过电流通道的电流和设置在有源层和栅电极之间的绝缘层，其中该工艺包括粘合步骤，其中工作液体位于有源层和绝缘层之间，并且有源层和绝缘层被附接在一起 。