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209 条记录 (耗时 0.03 秒)

    Carbon Nanotube Vacuum Transistors
    4.
    发明申请
    Carbon Nanotube Vacuum Transistors 有权
    碳纳米管真空晶体管

    公开(公告)号：US20170062743A1

    公开(公告)日：2017-03-02

    申请号：US14843332

    申请日：2015-09-02

    申请人： International Business Machines Corporation

    发明人： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

    IPC分类号： H01L51/05 ,  H01L51/00

    CPC分类号： H01L51/0562 ,  H01J21/105 ,  H01L29/0673 ,  H01L51/0017 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0558

    摘要： Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

    摘要翻译： 提供具有碳纳米管作为集电极和/或发射极的真空晶体管。 一方面，用于形成真空晶体管的方法包括以下步骤：用绝缘层覆盖衬底; 在绝缘层中形成背栅; 在栅极上沉积栅极电介质; 在栅极电介质上形成碳纳米管层; 图案化碳纳米管层以在后栅极的第一/第二侧上提供第一/第二部分，通过用作发射极和集电极的间隙G彼此分开; 在栅极电介质中形成真空沟道; 并且向发射极和集电极形成金属接触。 还提供真空晶体管。

    TRANSISTOR ELEMENT
    6.
    发明申请
    TRANSISTOR ELEMENT 有权
    晶体管元件

    公开(公告)号：US20150325805A1

    公开(公告)日：2015-11-12

    申请号：US14396023

    申请日：2012-04-27

    申请人： DAINICHISEIKA COLOR & CHEMICALS MFG.CO.,LTD.

    发明人： Ken-ichi NAKAYAMA ,  Junji KIDO ,  Ryotaro AKIBA ,  Naomi OGUMA ,  Naoki HIRATA

    IPC分类号： H01L51/05 ,  H01L51/10

    CPC分类号： H01L51/0504 ,  H01L51/0036 ,  H01L51/105 ,  H01L2251/301 ,  H01L2251/308

    摘要： The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.

    摘要翻译： 本发明提供一种具有叠层结构的晶体管元件，该叠层结构包括布置在发射电极和集电极之间的片状基极; 至少一个p型有机半导体层设置在基极的每个表面和背面上; 并且在基极的每个表面和背面上在基极和设置在基极的每个表面和背面上的p型有机半导体层之间形成电流传输促进层。 根据本发明，可以提供特别是通过简单的制造工艺稳定地供给的具有能够批量生产的结构并且具有大的电流调制效果的晶体管元件（MBOT），并且具有大的电流调制效果 在发射电极和集电极中的低电压下具有优异的ON / OFF比。

    PROTEIN TRANSISTOR DEVICE
    8.
    发明申请
    PROTEIN TRANSISTOR DEVICE 有权
    蛋白晶体管器件

    公开(公告)号：US20140048776A1

    公开(公告)日：2014-02-20

    申请号：US13691547

    申请日：2012-11-30

    申请人： NATIONAL CHIAO TUNG UNIVERSITY

    发明人： Gue-Wha HUANG ,  Meng-Yen HUNG ,  Yu-Shiun CHEN

    IPC分类号： H01L51/00 ,  H01L29/78

    CPC分类号： H01L51/0093 ,  B82Y10/00 ,  B82Y99/00 ,  H01L29/78 ,  H01L51/0002 ,  H01L51/0504 ,  H01L51/102 ,  Y10S977/773

    摘要： The present invention discloses a protein transistor device, wherein an antibody molecule (antibody-antigen) is bonded to at least two gold nanoparticles in a high reproducible self-assembly way to form molecular junctions, and wherein the two gold nanoparticles are respectively joined to a drain and a source. The protein transistor device can be controlled to regulate current via applying a bias to the gate. The conformational change of the protein molecule will cause the variation of the charge transport characteristics of the protein transistor device. The protein transistor device can be further controlled by different optical fields via conjugating a quantum dot to the molecular junctions. Therefore, the present invention has diversified applications.

    摘要翻译： 本发明公开了一种蛋白质晶体管器件，其中抗体分子（抗体 - 抗原）以高可重复自组装的方式结合至至少两个金纳米粒子以形成分子连接，并且其中两个金纳米颗粒分别连接到 排水和来源。 可以通过向栅极施加偏压来控制蛋白质晶体管器件以调节电流。 蛋白质分子的构象变化将导致蛋白晶体管器件的电荷传输特性的变化。 通过将量子点与分子结共轭，可以通过不同的光场进一步控制蛋白质晶体管器件。 因此，本发明具有多种应用。

    METHOD AND APPARATUS FOR INFRARED DETECTION AND DISPLAY
    9.
    发明申请
    METHOD AND APPARATUS FOR INFRARED DETECTION AND DISPLAY 有权
    用于红外检测和显示的方法和装置

    公开(公告)号：US20130206988A1

    公开(公告)日：2013-08-15

    申请号：US13850969

    申请日：2013-03-26

    申请人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    发明人： FRANKY SO

    IPC分类号： H01L27/32

    CPC分类号： H01L27/3227 ,  H01L27/288 ,  H01L27/307 ,  H01L51/0053 ,  H01L51/0081 ,  H01L51/0504 ,  H01L51/4213 ,  H01L51/428 ,  Y02E10/52 ,  Y02E10/549 ,  Y02P70/521

    摘要： Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.

    摘要翻译： 本发明的实施例涉及用于红外（IR）检测的方法和装置。 可以利用有机层产生用于检测IR辐射的光电晶体管。 IR检测器的波长范围可以通过掺入对不同波长的光子敏感的材料来修改。 可以将与光电晶体管的吸收层的主体有机材料不同波长的光子敏感的材料的量子点结合到吸收层中，以增强具有与量子点的材料相关的波长的光子的吸收。 可以使用光电导体结构来代替光电晶体管。 光电导体可以并入PbSe或PbS量子点。 光电导体可以掺入有机材料和OLED结构的一部分。 可以向用户显示检测到的IR图像。 可以使用有机材料来制造有机发光装置。