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1.发明授权Graphene epitaxied on SiC, with an open band gap and mobility comparable to standard graphene with zero band gap 有权石墨烯在SiC上表现，开放带隙和迁移率与具有零带隙的标准石墨烯相当公开(公告)号：US08906784B2
公开(公告)日：2014-12-09
申请号：US13508343
申请日：2010-11-09
申请人： Shirley Chiang , Hanna Enriquez , Hamid Oughaddou , Patrick Soukiassian , Antonio Tejeda Gala , Sébastien Vizzini
发明人： Shirley Chiang , Hanna Enriquez , Hamid Oughaddou , Patrick Soukiassian , Antonio Tejeda Gala , Sébastien Vizzini
IPC分类号： H01L21/335 , H01L21/66 , H01L21/02 , B82Y40/00
CPC分类号： H01L22/12 , B82Y40/00 , H01L21/02378 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02516 , H01L21/02527 , H01L21/02664 , H01L22/00
摘要： A method of manufacturing a modified structure comprising a semiconducting modified graphene layer on a substrate, comprising the subsequent following steps: supply of an initial structure comprising at least one substrate, formation of a graphene layer on the substrate, hydrogenation of the initial structure by exposure to atomic hydrogen, characterized in that the hydrogenation step of the graphene layer is done with an exposure dose between 100 and 4000 Langmuirs, and forms a modified graphene layer.
摘要翻译： 一种在衬底上制造包含半导体改性石墨烯层的改性结构的方法，包括随后的以下步骤：提供包括至少一个衬底的初始结构，在衬底上形成石墨烯层，通过曝光氢化初始结构 其特征在于石墨烯层的氢化步骤以100至4000兰缪尔之间的曝光剂量进行，并形成改性的石墨烯层。
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2.发明申请GRAPHENE EPITAXIED ON SIC, WITH AN OPEN BAND GAP AND MOBILITY COMPARABLE TO STANDARD GRAPHENE WITH ZERO BAND GAP 有权在SIC上展示的石墨，具有与带宽为零的标准石墨相比的开放带隙和移动性公开(公告)号：US20130126865A1
公开(公告)日：2013-05-23
申请号：US13508343
申请日：2010-11-09
申请人： Shirley Chiang , Hanna Enriquez , Hamid Oughaddou , Patrick Soukiassian , Antonio Tejeda Gala , Sébastien Vizzini
发明人： Shirley Chiang , Hanna Enriquez , Hamid Oughaddou , Patrick Soukiassian , Antonio Tejeda Gala , Sébastien Vizzini
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , B82Y40/00 , H01L21/02378 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02516 , H01L21/02527 , H01L21/02664 , H01L22/00
摘要： A method of manufacturing a modified structure comprising a semiconducting modified graphene layer on a substrate, comprising the subsequent following steps: supply of an initial structure comprising at least one substrate, formation of a graphene layer on the substrate, hydrogenation of the initial structure by exposure to atomic hydrogen, characterised in that the hydrogenation step of the graphene layer is done with an exposure dose between 100 and 4000 Langmuirs, and forms a modified graphene layer.
摘要翻译： 一种在衬底上制造包含半导体改性石墨烯层的改性结构的方法，包括随后的以下步骤：提供包括至少一个衬底的初始结构，在衬底上形成石墨烯层，通过曝光氢化初始结构 其特征在于石墨烯层的氢化步骤以100至4000兰缪尔之间的曝光剂量进行，并形成改性的石墨烯层。
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