公开(公告)号：US07309877B2

公开(公告)日：2007-12-18

申请号：US10485634

申请日：2003-06-11

申请人： Hitoshi Abe ,  Toshihiko Orii ,  Osamu Akimoto ,  Toshihiko Mochida ,  Shodai Nakayama

发明人： Hitoshi Abe ,  Toshihiko Orii ,  Osamu Akimoto ,  Toshihiko Mochida ,  Shodai Nakayama

IPC分类号： H01L31/036

CPC分类号： G02F1/1368 ,  G02F1/136213 ,  G02F1/136277 ,  G02F2203/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/13

摘要： Disclosed is a semiconductor device capable of realizing a reduction in the area of each pixel without degrading noise resistance. A switching transistor (13) and a signal accumulation capacitor (15) are formed on a semiconductor substrate (base semiconductor region) (11) of a first conduction type, on the basis of each unit region for constituting a pixel Px. The switching transistor (13) has a structure in which a source region (13S) and a drain region (13D) of a second conduction type are formed on the semiconductor substrate (11), and a gate electrode (13G) is formed on the region between the source region (13S) and the drain region (13D), with an insulating layer (12a) therebetween. The signal accumulation capacitor (15) has a structure in which high-concentration semiconductor regions (15D) and (15S) of the first conduction type are formed on the semiconductor substrate (11), and an electrode (15G) is formed on the region between the semiconductor regions (15D) and (15S), with an insulating layer (12b) therebetween. A structure may be adopted in which a bias semiconductor region (17) is not provided, and the semiconductor regions (15D) and (15S) are made to serve also as the bias semiconductor region.

摘要翻译： 公开了能够实现每个像素的面积的减小而不降低耐噪声性的半导体器件。 基于用于构成像素Px的每个单位区域，在第一导电类型的半导体衬底（基底半导体区域）（11）上形成开关晶体管（13）和信号累积电容器（15）。 开关晶体管（13）具有在半导体基板（11）上形成有第二导电型的源极区（13S）和漏极区（13D）的结构，栅电极（13G）为 形成在源极区域（13S）和漏极区域（13D）之间的区域上，其间具有绝缘层（12a）。 信号累积电容器（15）具有在半导体基板（11）上形成第一导电型的高浓度半导体区域（15D）和（15S）的结构，形成电极（15G） 在半导体区域（15D）和（15S）之间的区域上，其间具有绝缘层（12b）。 可以采用不设置偏置半导体区域（17）的结构，并且使半导体区域（15D）和（15S）也用作偏置半导体区域。