公开(公告)号：US4499147A

公开(公告)日：1985-02-12

申请号：US451940

申请日：1982-12-21

申请人： Ryo Enomoto ,  Hidetoshi Yamauchi ,  Shoji Tanikawa

发明人： Ryo Enomoto ,  Hidetoshi Yamauchi ,  Shoji Tanikawa

IPC分类号： H01L21/48 ,  H01L23/15 ,  C03C3/12

CPC分类号： H01L21/4807 ,  H01L23/15 ,  H01L2924/0002

摘要： A silicon carbide substrate having excellent electrical insulation properties is disclosed. The silicon carbide substrate is produced by closely adhering to a surface of a silicon carbide plate body a eutectic oxide layer comprising SiO.sub.2 produced by partial oxidation of the plate body and at least one oxide selected from Al.sub.2 O.sub.3, P.sub.2 O.sub.5, B.sub.2 O.sub.3, GeO.sub.2, As.sub.2 O.sub.3, Sb.sub.2 O.sub.3, Bi.sub.2 O.sub.3, V.sub.2 O.sub.5, ZnO, PbO, Pb.sub.3 O.sub.4, PbO.sub.2, CdO, Na.sub.2 O, K.sub.2 O, BeO, CaO, MgO, BaO and SrO.

摘要翻译： 公开了具有优异的电绝缘性能的碳化硅衬底。 碳化硅衬底通过紧密地附着到碳化硅板体的表面上，该共晶氧化物层包含通过板体的部分氧化产生的SiO和从Al 2 O 3，P 2 O 5，B 2 O 3，GeO 2，As 2 O 3，Sb 2 O 3中选择的至少一种氧化物 ，Bi2O3，V2O5，ZnO，PbO，Pb3O4，PbO2，CdO，Na2O，K2O，BeO，CaO，MgO，BaO和SrO。

公开(公告)号：US4664946A

公开(公告)日：1987-05-12

申请号：US858834

申请日：1986-04-29

申请人： Ryo Enomoto ,  Hidetoshi Yamauchi ,  Shoji Tanikawa

发明人： Ryo Enomoto ,  Hidetoshi Yamauchi ,  Shoji Tanikawa

IPC分类号： H01L21/48 ,  H01L23/15 ,  B05D5/12

CPC分类号： H01L21/4807 ,  H01L23/15 ,  H01L2924/0002

摘要： This invention relates to a method of producing a silicon carbide substrate having desirable electrical insulation properties. The silicon carbide substrate is produced by applying to a surface of a silicon carbide plate a film-forming composition which consists essentially of at least one oxide or substance with produces an oxide by decomposition of an element selected from the group consisting of aluminum, phosphorus, boron, germanium, arsenic, antimony, bismuth, vanadium, zinc, lead, cadmium, sodium, potassium, lithium, beryllium, calcium, magnesium, barium and strontium and heating the silicon carbide body in an oxidizing atmosphere to form a eutectic oxide layer thereon.

摘要翻译： 本发明涉及一种具有所需电绝缘性能的碳化硅基板的制造方法。 通过向碳化硅板的表面施加成膜组合物来制造碳化硅衬底，所述成膜组合物基本上由至少一种氧化物或物质组成，所述氧化物或物质通过分解选自铝，磷， 硼，锗，砷，锑，铋，钒，锌，铅，镉，钠，钾，锂，铍，钙，镁，钡和锶，并在氧化气氛中加热碳化硅体以在其上形成共晶氧化物层 。