公开(公告)号：US07381646B2

公开(公告)日：2008-06-03

申请号：US11161722

申请日：2005-08-15

申请人： Jiannong Su ,  Simon Shi-ning Yang ,  Jian Zhang

发明人： Jiannong Su ,  Simon Shi-ning Yang ,  Jian Zhang

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  H01L21/76808 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor fabrication method or process is provided for fabricating an integrated circuit (IC) originally having an Al backend design using a Cu BEOL fabrication process. The method converts the Al backend design to a Cu backend design without redesigning the IC for Cu BEOL fabrication process, and uses the resultant Cu design to fabricate the IC using Cu BEOL fabrication process. The Al-Cu conversion first determines layer construction of the Al design, and then matches metal resistances of the Al design with metal resistances of a Cu design, matches intra-metal capacitances of the Al design with intra-metal capacitances of the Cu design, and matches inter-metal capacitance of the Al design with inter-metal capacitances of the Cu design.

摘要翻译： 提供半导体制造方法或工艺，用于制造最初具有使用Cu BEOL制造工艺的Al后端设计的集成电路（IC）。 该方法将Al后端设计转换为Cu后端设计，而无需重新设计Cu BEOL制造工艺的IC，并使用所得到的Cu设计，使用Cu BEOL制造工艺制造IC。 Al-Cu转换首先确定Al设计的层结构，然后将Al设计的金属电阻与Cu设计的金属电阻相匹配，将Al设计的金属间电容与Cu设计的金属间电容匹配， 并将Al设计的金属间电容与Cu设计的金属间电容匹配。

公开(公告)号：US07442637B2

公开(公告)日：2008-10-28

申请号：US11161723

申请日：2005-08-15

申请人： Jiannong Su ,  Simon Shi-ning Yang ,  Jian Zhang

发明人： Jiannong Su ,  Simon Shi-ning Yang ,  Jian Zhang

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L23/5222 ,  H01L23/5283 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for processing IC designs for different metal BEOL processes is provided for enabling fabricating using a metal fabrication process an IC originally having a backend design for a different metal fabrication process. The method first determines layer constructions of an original design of an IC for a first metal backend process, and, based on the layer constructions of the original design of the IC, constructs primitive layer constructions of a target design of the IC for a second metal backend process. The method then tunes an effective dielectric constant of a dielectric layer of the target design to match an associated capacitance of the target backend design with a corresponding capacitance of the original backend design. The method can be used to convert a backend design of an IC from an old metal process (such as Al process) to a new metal process (such as Cu process), without redesigning the IC for the new metal BEOL fabrication process.

摘要翻译： 提供了一种用于处理用于不同金属BEOL工艺的IC设计的方法，用于使得能够使用金属制造工艺来制造最初具有用于不同金属制造工艺的后端设计的IC。 该方法首先确定用于第一金属后端处理的IC的原始设计的层结构，并且基于IC的原始设计的层结构，构建用于第二金属的IC的目标设计的原始层结构 后端进程。 然后，该方法调谐目标设计的介电层的有效介电常数，以将目标后端设计的相关电容与原始后端设计的相应电容相匹配。 该方法可用于将IC的后端设计从旧金属工艺（例如Al工艺）转换为新的金属工艺（例如Cu工艺），而不需要重新设计用于新金属BEOL制造工艺的IC。

公开(公告)号：US20230367110A9

公开(公告)日：2023-11-16

申请号：US15784082

申请日：2017-10-13

申请人： Wei Cao ,  Simon Shi ,  Yoy Dai ,  Scott Gant

发明人： Wei Cao ,  Simon Shi ,  Yoy Dai ,  Scott Gant

IPC分类号： F21L4/02 ,  F21L4/08 ,  F21V29/74 ,  F21V15/01 ,  F21V31/00 ,  F21V23/06 ,  G03B15/05 ,  G02B19/00 ,  F21V23/00 ,  H02J7/00

CPC分类号： F21L4/02 ,  F21L4/08 ,  F21V29/74 ,  F21V15/01 ,  F21V31/005 ,  F21V23/06 ,  G03B15/05 ,  G02B19/0009 ,  G02B19/0061 ,  F21V23/007 ,  H02J7/0052 ,  F21Y2105/16

摘要： The disclosure generally relates to generating lighting in an efficient way while in the outdoors. The designs are meant to maximize the amount of light generated, by the smallest assembly that is rugged to use in general outdoor activities and water sports. Further designs are related to hands-free mounting capabilities on outdoor equipment such as bikes, surfboards, snowboards and other similar equipment. Additional features include various filters, waterproofing, recharging or lighting differences which provide greater visual or photographic advantages to the user.