公开(公告)号：US5083180A

公开(公告)日：1992-01-21

申请号：US595580

申请日：1990-10-11

申请人： Masato Miura ,  Tatsuo Shimura ,  Tadaaki Kariya ,  Norihiro Kawauchi ,  Sinichi Kurita

发明人： Masato Miura ,  Tatsuo Shimura ,  Tadaaki Kariya ,  Norihiro Kawauchi ,  Sinichi Kurita

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/08 ,  H01L29/732 ,  H01L29/735

CPC分类号： H01L29/735

摘要： A lateral-type semiconductor device is provided in which a p-emitter layer and a p-collector layer are formed on the exposed-surface side of an n-base layer. The exposed surfaces of the p-emitter layer and the n-base layer are substantially surrounded by the exposed surface of the p-collector layer. The n-base layer is connected to a base electrode or through a first heavily-doped region extending from under the n-base region to an exposed surface area on the outer-periphery side of the p-collector layer. In an alternative embodiment a second heavily-doped region for connecting the n-base layer and the first heavily-doped region can be provided.

摘要翻译： 提供了一种横向型半导体器件，其中在n基层的暴露表面侧上形成有p发射极层和p集电极层。 p发射极层和n基层的暴露表面基本上被p集电体层的暴露表面包围。 n基层与基极电极或者从n基区域下方延伸的第一重掺杂区域连接到p集电体层的外周侧的露出表面区域。 在替代实施例中，可以提供用于连接n基极层和第一重掺杂区域的第二重掺杂区域。